Electroluminescence in reverse-biassed zinc selenide Schottky diodes

Allen, John; Livingstone, A.; Turvey, K.

doi:10.1016/0038-1101(72)90130-x

Cited by 36 publications

(5 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The maximum value of the external quantum efficiency for the thicker films was found to be around 2.2 to 4.17: photons electron-l. These values are in fair agreement with a theoretical estimate of 1.074 photons electron-l per 1015 ctn-2 iniplanted dose using the simplified formula applied by Allen et al [20], which assumes a maximum value of 1O-I' cni2 for the cross-section for impact excitation of Mn in 7;nS:Mn.…”

Section: Discussionsupporting

confidence: 89%

Physical mechanism of current conduction and light emission in high-resistivity ZnS:Mn thin films

Lawther¹,

Anand

1977

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

Thin films of ZnS doped only with implanted Mn display the characteristic strong yellow 585 nm peak electroluminescent emission at high electric field intensities in the absence of additional activation by either Cu or Cl. Emission is obtained only above a threshold field of about 0.45 × × 106 V cm−1, with a maximum brightness in the region 40 to 70 ft la and maximum quantum and power efficiencies of 4.1% photons electron−1 and 1.5 × 10−1% W W−1, respectively. A mechanism of bulk‐limited conduction leading to electroluminescence by impact excitation of the Mn centre is unambiguously deduced from examination of the experimental and theoretical data. Mean free paths for the low‐field electron‐LO phonon interaction energy loss of 8.2 to 11.3 Å are measured for several films.

show abstract

Section: Discussionsupporting

confidence: 89%

Physical mechanism of current conduction and light emission in high-resistivity ZnS:Mn thin films

Lawther¹,

Anand

1977

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

show abstract

“…2. We notice that the theoretical value of the ground state energy 0.5 eV above the valence band is in good agreement with 0.6 eV measured by Allen et al (8) and with those which were observed in EPR experiments (9).…”

supporting

confidence: 92%

The bound state of Mn²⁺ ion in ZnSe

Hamera

1975

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…from X3 to X1 and X1 to Fl. The X3-X1 gap has been estimated to be 0.3 eV and the X1-rl and L1-rl gaps to be 2 eV and 1.5 eV respectively (Eckelt 1967) and transitions between these bands could lead to the observed luminescence as proposed by Turvey and Allen (1972) to explain a similar broad emission band in ZnSe Schottky barrier electroluminescence.…”

Section: Analysis and Discussion Of Luminescence Spectramentioning

confidence: 78%

Time resolved DC electroluminescence studies in ZnS:Mn, Cu powder phosphors

Skolnick

1981

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Time resolved studies of DC electroluminescence (EL) from ZnS:Mn, Cu powder phosphors are reported. An emission band arising from the Mn2+, 4T1 to 6AI transition and a very broad band attributed to radiative interband transitions of hot electrons are detected. The hot electron band is used as a probe of the onset of avalanching in the devices. EL emission is found to occur simultaneously for the two bands. Detailed studies of the EL onsets reveal that luminescence emission occurs, to within 100 ns, when the voltage across the high resistivity region is sufficient for avalanching, without any additional delay being present. This is consistent with the Mn2+ being excited by direct impact by hot electrons. The rate of decay of the Mn luminescence is found to increase with increasing Mn concentration. Various concentration quenching mechanisms are discussed to account for this behaviour. High current densities are deduced from the rate of increase of luminescence rise transients. Only 1 to 5% of the Mn ions in the phosphor can be excited.

show abstract

Electroluminescence in reverse-biassed zinc selenide Schottky diodes

Cited by 36 publications

References 8 publications

Physical mechanism of current conduction and light emission in high-resistivity ZnS:Mn thin films

Physical mechanism of current conduction and light emission in high-resistivity ZnS:Mn thin films

The bound state of Mn²⁺ ion in ZnSe

Time resolved DC electroluminescence studies in ZnS:Mn, Cu powder phosphors

Contact Info

Product

Resources

About

Electroluminescence in reverse-biassed zinc selenide Schottky diodes

Cited by 36 publications

References 8 publications

Physical mechanism of current conduction and light emission in high-resistivity ZnS:Mn thin films

Physical mechanism of current conduction and light emission in high-resistivity ZnS:Mn thin films

The bound state of Mn2+ ion in ZnSe

Time resolved DC electroluminescence studies in ZnS:Mn, Cu powder phosphors

Contact Info

Product

Resources

About

The bound state of Mn²⁺ ion in ZnSe