Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes

Jeong, Min Chang; Oh, Byung Ho; Ham, Moon Ho; Myoung, Jae Min

doi:10.1063/1.2204655

Cited by 199 publications

(121 citation statements)

References 13 publications

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“…The assignment of the emission peaks in the electroluminescence (EL) spectra is typically performed on the basis of comparison with the photoluminescence (PL) spectra. 4,7 Such assignment is difficult when there are no corresponding peaks in the PL spectra, as in the case of commonly observed violet emission which falls between the PL peaks of ZnO and p-GaN. Furthermore, unlike ZnO, p-GaN substrates rarely exhibit significant PL emission in green-to-red spectral range.…”

Section: Introductionmentioning

confidence: 99%

“…41,42 Obtained value of the ideality factor is large (n ¼ 32.7), which is not entirely unexpected for junctions involving wide band gap materials. 7,42 Large ideality factors have been previously attributed to the space-charge limited conduction, deep-level assisted tunneling, and parasitic rectifying junctions. 42 At higher forward bias (4.5 V < V < 15 V), the I-V curve could be described with I $ V b , where b ¼ 2.1, close to the I $ V 2 relationship common for wide band gap materials.…”

Section: -mentioning

confidence: 99%

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ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen

Fang

et al. 2011

Journal of Applied Physics

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Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence Appl. Phys. Lett. 100, 153506 (2012) Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring J. Appl. Phys. 111, 074512 (2012) Effects of energetic disorder on the low-frequency differential capacitance of organic light emitting diodes J. Appl. Phys. 111, 074506 (2012) Probing the electrode-polymer interface in conjugated polymer devices with surface-enhanced Raman scattering Appl. Phys. Lett. 100, 141907 (2012) Low-cost caesium phosphate as n-dopant for organic light-emitting diodes J. Appl. Phys. 111, 074502 (2012) Additional information on J. Appl. Phys. ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells.

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Section: Introductionmentioning

confidence: 99%

Section: -mentioning

confidence: 99%

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen

Fang

et al. 2011

Journal of Applied Physics

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“…More often in LEDs, instead of ZnO homojunctions, heterojunctions of n-ZnO and other p-type materials have been used, of which p-GaN is of particular interest considering it has similar crystallographic and electronic properties to ZnO [11,[367][368][369]. In addition, it has been suggested that the ZnO nanowire/GaN substrate heterojunction has a higher carrier injection efficiency and a higher recombination rate than other junctions [370].…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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“…One-dimensional inorganic nanostructures have been intensively studied recently with the interesting proper- ties of increased charge injection efficiency at the nanosize junctions and increased light-extraction efficiency in the wave-guide structures [24][25][26][27][28][29][30][31]. Compared to the thinfilm ILEDs, the inorganic nanowire (NW) structures possess inherent advantages for "soft" LEDs with its onedimensional configuration.…”

Section: Light-emitting Diodes (Leds)mentioning

confidence: 99%

Progress and Prospects in Stretchable Electroluminescent Devices

Wang

Lee

2017

Nanophotonics

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Stretchable electroluminescent (EL) devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are reviewed. Finally, we summarize with our perspectives on the approaches for the stretchable EL devices and our proposals on the future development in these devices.

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Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes

Cited by 199 publications

References 13 publications

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

One-dimensional ZnO nanostructures: Solution growth and functional properties

Progress and Prospects in Stretchable Electroluminescent Devices

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