Electroluminescence from two I–III–VI quantum dots of A–Ga–S (A=Cu, Ag)

Kim, Jong-Hoon; Yoon, Suk-Young; Kim, Kyung-Hye; Lim, Han-Byule; Kim, Hwi-Jae; Yang, Heesun

doi:10.1364/ol.43.005287

Cited by 10 publications

(5 citation statements)

References 30 publications

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“…Semiconductor quantum dots (QDs), which have been found to attract photoluminescent materials, have recently been utilized for commercial devices in terms of, for example, the color conversion material for the backlight sources used in liquid crystalline displays. − The QDs exhibit unique characteristics such as high absorption as well as a narrowband and tunable photoluminescence (PL) due to the energy band structure. In addition, the use of QDs as the emitting layer of electroluminescence devices also presents a promising application of these materials. − In the early stage of development, most of the research on QDs was focused on cadmium chalcogenide (II–VI semiconductors). However, the demand for environmentally benign alternatives as the next generation of light-emitting materials has continued to increase.…”

Section: Introductionmentioning

confidence: 99%

Luminescent Quaternary Ag(In_xGa_1–x)S₂/GaS_y Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

et al. 2021

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Cadmium-free quantum dots (QDs) consisting of silver–indium–gallium–sulfide (AIGS) quaternary semiconductors were successfully synthesized using a metal–dithiocarbamate complex with sufficiently high reactivity to produce metal sulfides. The introduction of a gallium diethyldithiocarbamate precursor decreased the reaction temperature to produce active intermediates, which were subsequently converted into AIGS QDs at 150 °C with silver and indium acetates. Because of the low reaction temperature, AIGS QDs with a tetragonal crystal phase were produced selectively, which favorably generated band-edge emission whose full width at half-maximum is smaller than 40 nm after they were coated with gallium sulfide (GaS y ) shells. The compositional indium/gallium ratio was varied by changing the mixing ratio of the precursors used for the synthesis of the AIGS core, and the band-edge photoluminescence (PL) generated from the AIGS/GaS y core/shell QDs was blue-shifted with an increase in the gallium content in the core. Consequently, a pure green emission centered at 518 nm was obtained with a PL quantum yield as high as 68%.

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Section: Introductionmentioning

confidence: 99%

Luminescent Quaternary Ag(In_xGa_1–x)S₂/GaS_y Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

et al. 2021

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“…In 2018, Yang et al integrated QLEDs based on AGS and CGS QDs to discuss the effect of composition and electronic structure on efficiency. 9 The results indicate that the EL of AGS is broadened compared with the PL, while that of CGS is nearly equivalent to PL. The main reason may be related to the excitonic coupling to longitudinal optical photons under electric field.…”

Section: ■ Synthesis and Optical Propertiesmentioning

confidence: 88%

“…The characteristics of QLEDs are strongly dependent on the composition, showing decreases in efficiency with increasing Ga 3+ content. In 2018, Yang et al integrated QLEDs based on AGS and CGS QDs to discuss the effect of composition and electronic structure on efficiency . The results indicate that the EL of AGS is broadened compared with the PL, while that of CGS is nearly equivalent to PL.…”

Section: Led Applicationsmentioning

confidence: 99%

“…I–III–VI QDs and derivatives exhibit excellent prospects in candidates for future high-quality electronic devices of solar cells, photocatalysis, biological imaging, and LEDs, − especially the superior semiconductor properties of direct band gap, tunable band structure, high photoluminescence quantum yield (PLQY), and energy convergence in excited state, , which are essential factors for QLEDs. This review first summarizes the precise structure design and luminescence mechanism and then generalizes the crucial factors of synthesis; afterward, optical performance and QLEDs are demonstrated in detail.…”

Section: Introductionmentioning

confidence: 99%

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I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

et al. 2023

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Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I− III−VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I−III−VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I−III−VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.

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“… 161 Data from Soenen et al showed that when QDs were exposed to the intracellular structure of a lower pH, it took endocytosis to result in partial degradation and release of Cd 2+ , thereby reducing its fluorescence intensity and increasing the toxicity of particles. 162 To address this problem, environmental benign non-Cd QDs are recently developed, such as III–V InP, 163 II–VI ZnSe, 164 I-III-VI Cu-Ga-S (CGS) QDs 165 and I-III-VI2 CuInS 2 . 166 …”

Section: Parameters Affecting the Toxicity Of Qdsmentioning

confidence: 99%

A Review of in vivo Toxicity of Quantum Dots in Animal Models

Lin,

Chen

2023

IJN

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Tremendous research efforts have been devoted to nanoparticles for applications in optoelectronics and biomedicine. Over the past decade, quantum dots (QDs) have become one of the fastest growing areas of research in nanotechnology because of outstanding photophysical properties, including narrow and symmetrical emission spectrum, broad fluorescence excitation spectrum, the tenability of the emission wavelength with the particle size and composition, anti-photobleaching ability and stable fluorescence. These characteristics are suitable for optical imaging, drug delivery and other biomedical applications. Research on QDs toxicology has demonstrated QDs affect or damage the biological system to some extent, and this situation is generally caused by the metal ions and some special properties in QDs, which hinders the further application of QDs in the biomedical field. The toxicological mechanism mainly stems from the release of heavy metal ions and generation of reactive oxygen species (ROS). At the same time, the contact reaction with QDs also cause disorders in organelles and changes in gene expression profiles. In this review, we try to present an overview of the toxicity and related toxicity mechanisms of QDs in different target organs. It is believed that the evaluation of toxicity and the synthesis of environmentally friendly QDs are the primary issues to be addressed for future widespread applications. However, considering the many different types and potential modifications, this review on the potential toxicity of QDs is still not clearly elucidated, and further research is needed on this meaningful topic.

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Electroluminescence from two I–III–VI quantum dots of A–Ga–S (A=Cu, Ag)

Cited by 10 publications

References 30 publications

Luminescent Quaternary Ag(In_xGa_1–x)S₂/GaS_y Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

Luminescent Quaternary Ag(In_xGa_1–x)S₂/GaS_y Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

A Review of in vivo Toxicity of Quantum Dots in Animal Models

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Electroluminescence from two I–III–VI quantum dots of A–Ga–S (A=Cu, Ag)

Cited by 10 publications

References 30 publications

Luminescent Quaternary Ag(InxGa1–x)S2/GaSy Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

Luminescent Quaternary Ag(InxGa1–x)S2/GaSy Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

A Review of in vivo Toxicity of Quantum Dots in Animal Models

Contact Info

Product

Resources

About

Luminescent Quaternary Ag(In_xGa_1–x)S₂/GaS_y Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

Luminescent Quaternary Ag(In_xGa_1–x)S₂/GaS_y Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment