Electroluminescence from silicon-rich nitride/silicon superlattice structures

Warga, J.; Li, R.; Basu, Soumendra N.; Negro, Luca Dal

doi:10.1063/1.3003867

Cited by 67 publications

(67 citation statements)

References 18 publications

(25 reference statements)

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“…3(a), such a change in the conduction regime can be appreciated in the change of slope of the J-V curves at 15-20V for A1. A SCLC type of conduction has been reported for SRSN by Warga et al [23]. Following this equation, we find an electron mobility of 1.25 x 10 5 cm 2 /(V·s) which is one order of magnitude lower than the value reported in ref [24] for Si nitrides.…”

Section: Electro-optical Characterizationcontrasting

confidence: 43%

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Berencén¹,

Carreras²,

Jambois³

et al. 2011

Opt. Express

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Abstract:The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi-and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. Garrido, "Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitrideoxide gate stacks," Appl.

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Section: Electro-optical Characterizationcontrasting

confidence: 43%

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Berencén¹,

Carreras²,

Jambois³

et al. 2011

Opt. Express

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“…Intrinsic emission has been also observed in SRN ilms [27][28][29][30][31]. For example, an orange emission at 600 nm was observed at room temperature and has been related to the electron-hole pairs' recombination within Si-nps [27].…”

Section: Introductionmentioning

confidence: 73%

“…Red-near infrared EL (800 nm) has been reported in superlatices combining SRN and SiO 2 ilms and explained by the bipolar recombination of electron-hole pairs in Si-nps present within the SRN ilms [31]. A yellow EL emission has been reported when an SRO ilm instead of SiO 2 layer is used in the multilayer structure [32].…”

Section: Introductionmentioning

confidence: 94%

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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Luminescent silicon-rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon-rich nitride (SRN) and silicon-rich oxide (SRO) ilms have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO ilms deposited by low-pressure chemical vapor deposition are reviewed and discussed. SRN and SRO ilms, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emiting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO ilms as the dielectric layer. SRN-LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO-LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO-LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

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“…In these samples, the emission is enhanced relative to the emission from bulk Si because of electron-hole localization effects due to either quantum confinement or trapping to surface states [11]. In addition, significant work has been conducted to study electrical injection of the Si-NCs in both oxide and nitride systems [12]- [14]. We also explore a material system with Er in amorphous silicon nitride, which emits at the telecom wavelength of 1530 nm, ideally suited for on-chip Si photonics applications [15], [16].…”

Section: Introductionmentioning

confidence: 99%

“…However, it is possible to enhance the pumping of Er ions in amorphous silicon nitride by taking advantage of an efficient, nanosecondfast energy transfer from the matrix, which has four orders of magnitude larger absorption cross section than direct excitation of Er ions [15]- [17]. Since SRN layers can be electrically injected more efficiently than oxide-based dielectric matrices [14], it should also be possible to electrically excite Er ions in this configuration, paving a path to electrically pumped sources at the telecom wavelength.…”

Section: Introductionmentioning

confidence: 99%

Photonic Crystal and Plasmonic Silicon-Based Light Sources

Makarova

Gong

Cheng

et al. 2010

IEEE J. Select. Topics Quantum Electron.

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Abstract-Efficient silicon (Si)-compatible emitters can realize inexpensive light sources for a variety of applications. In this paper, we study both photonic crystal (PC) and plasmonic nanocavities that enhance the emission of Si-compatible materials. In particular, we examine the coupling of silicon nanocrystals (Si-NCs) to silicon nitride PC cavities and Si-NCs in silicon dioxide to plasmonic gratings, both for enhancement of emission in the visible wavelengths. In addition, we also observe the enhancement of the 1530 nm emission from erbium-doped silicon nitride films coupled to Si PC cavities. Finally, we analyze the loss mechanisms associated with the hybrid silicon nitride/silicon system, and propose advancements in the designs of PC and plasmonic cavities for the emitters described in this paper.

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Electroluminescence from silicon-rich nitride/silicon superlattice structures

Cited by 67 publications

References 18 publications

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Photonic Crystal and Plasmonic Silicon-Based Light Sources

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