Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K

Abstract

We present light emitting diode structures with InGaN quantum dots (QDs) as active material grown by metal-organic vaporphase epitaxy. The devices reveal a threshold voltage of 3.15 V at room temperature, or 8.8 V at 4 K, respectively. At room temperature, the electroluminescence intensity is still as high as 28% of the intensity at 4 K, the emission covering the spectral region from 2.3 to 2.7 eV at 4 K (2.2-2.6 eV at 300 K). Electrically driven luminescence from spectrally isolated single InGaN QDs emitting in the green spectral region is demonstrated with a thermal stability of up to 150 K. These results are an important step towards applications like electrically driven single photon emitters at elevated temperatures, which are desirable as a basis for communication techniques incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.

Electrically Driven Quantum Light Sources

“…EL from a single GaN QD on n-doped GaN:Si was demonstrated at up to 150 K, showing the possibility of room temperature device operation. [ 106 ] Adv 6 N/GaN QD integrated with a simple, monolithically grown semiconductor LED structure. [ 11 ] The EL from the diode showed excitonic transitions from individual QDs up to room temperature and follows subPoissonian photon statistics with a g 2 (0) = 0.29.…”