Electroluminescence from Eu3+ doped Sr2CeO4 nanocrystalline thin films

Perea-López, Néstor; Gonzalez-Ortega, J. A.; Hirata, G.A.

doi:10.1016/j.optmat.2006.03.006

Cited by 28 publications

(19 citation statements)

References 12 publications

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“…10 Investigations on the incorporation of trivalent rare-earth (RE) ions into semiconductors have grown significantly in recent years, because the rare-earth ions present a wide range of optical transitions, from the ultraviolet to the infrared (IR), 11 and this sort of material may contribute to technological innovations, leading to the creation of new optoelectronic devices, such as electroluminescent devices. 12 For optical integration, materials with low optical loss and doped with optically active elements are required, such as the rare-earth ions.…”

Section: Introductionmentioning

confidence: 99%

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol–Gel Dip-Coating and Resistive Evaporation

Pineiz

Scalvi

Saeki

et al. 2010

Journal of Elec Materi

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The natural n-type conduction of tin dioxide (SnO 2 ) may be compensated by trivalent rare-earth doping. In this work, SnO 2 thin films doped with Eu 3+ have been deposited by the sol-gel dip-coating (SGDC) process, topped by a GaAs layer deposited by the resistive evaporation technique. The goal is the combination of a very efficient rare-earth emitting matrix with a high-mobility semiconductor. The x-ray diffraction pattern of SnO 2 :Eu/GaAs heterojunctions showed simultaneously the crystallographic plane characteristics of GaAs as well as cassiterite SnO 2 structure. The electric resistance of the heterojunction device is much lower than the resistance of the SnO 2 :2 at.%Eu and GaAs films considered separately. Micrographs obtained by scanning electron microscopy (SEM) of the cross-section showed that the interface is clearly identified, exhibiting good adherence and uniformity. A possible explanation for the low resistivity of the SnO 2 :2 at.%Eu/GaAs heterojunction is the formation of small channels with two-dimensional electron gas (2DEG) behavior.

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Section: Introductionmentioning

confidence: 99%

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol–Gel Dip-Coating and Resistive Evaporation

Pineiz

Scalvi

Saeki

et al. 2010

Journal of Elec Materi

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show abstract

“…Since Sr 2 CeO 4 was found as a novel and promising blue luminescent material by combinatorial chemistry method [8], Sr 2 CeO 4 phosphor has been widely studied because of its great importance in the realization of a new generation of optoelectronic and displaying devices [9]. Sr 2 CeO 4 phosphor is conventionally synthesized by solid-state reaction [10], which requires high energy consumption to obtain pure crystalline phase and cannot always produce phosphors of an acceptable quality for practical applications.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and luminescent property of Sr2CeO4 phosphor via EDTA-complexing process

Zhang

Jiang

Yang

et al. 2009

Journal of Alloys and Compounds

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“…Otherwise, a rather higher conductivity increase would be provided by the population of excited states in the 2DEG. At this point one must recall that excitation with the fourth harmonic of the Nd:YAG laser (266 nm) is related to the matrix band-to-band excitation, followed by energy transfer to Eu 3+ ions 6 , leading to emissions: 5 D 0 → 7 F 2 (2.02 eV) and 5 D 0 → 7 F 1 (2.10 eV) for ions located close to the particles' surfaces, or at Sn 4+ substitutional sites, respectively. Concerning the electrical properties, Eu-doped thin films were appropriately excited with the same 266 nm laser line, and the decay of excited conductivity was analyzed 30 .…”

Section: Resultsmentioning

confidence: 99%

“…The trivalent rare-earth incorporation in semiconductor has grown significantly in the last years, leading to widely investigated processes, because RE present optical transitions in and wide range, from ultraviolet to infrared, giving birth to technologically interesting emissions, including electroluminescent devices 5 . The Eu-doped matrix SnO 2 presents two types of Eu 3+ incorporation: at symmetry sites, substitutional to Sn 4+ , or at asymmetric sites, at particles surface, due to doping segregation 6 .…”

Section: +mentioning

confidence: 99%