Electroluminescence from a Single-Nanocrystal Transistor

Gudiksen, Mark S.; Maher, Kristin N.; Ouyang, Lian; Park, Hongkun

doi:10.1021/nl0516005

Cited by 57 publications

(88 citation statements)

References 33 publications

(68 reference statements)

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“…CdSe-and CdS-based nanomaterials such as quantum dots and NWs have been extensively explored in the past, and their superb optical and opto-electrical properties have been reported in detail by various groups (31)(32)(33). Notably, NWs (for instance, in the case of ZnO NWs) have been shown to be ideal materials for photodetection with significantly higher sensitivities than their bulk counterparts, arising from their high surface area-to-volume ratio that results in high density of surface states (21,33).…”

Section: Resultsmentioning

confidence: 99%

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Fan

Jacobson

et al. 2008

Proc. Natl. Acad. Sci. U.S.A.

239

235

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We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of Ϸ80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 ؋ 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.nanomaterials ͉ printable electronics ͉ devices ͉ transistors ͉ imager C hemically derived, synthetic nanomaterials with low dimensionality and well defined atomic composition present a unique route toward miniaturization of electronic and sensor components while enhancing their performance and functionality (1-5). To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21-26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts. For instance, downscaling of the active sensing material to the nanoscale regime has been shown to enhance the sensitivity of chemical, biological, and optical sensors by orders of magnitude (21-26). To enable the implementation of nanosensors for various technological applications, on-chip integration with electronics is needed to enable automated and accurate processing of the signal. Here, we demonstrate an all-integrated, heterogeneous nanowire (NW) circuitry, capable of detecting and amplifying an optical signal with high sensitivity and responsivity. By implementing our recently developed contact printing technology (29, 30), large arrays of optically active CdSe NWs and high-mobility core/shell Ge/Si NWs are assembled at well defined locations on substrates, and configured as integrated sensor and electronic active components of an all-nanowire circuitry with image-sensing capability. Results and DiscussionIn this work, direct band gap CdSe NWs were used as a model system for the optical sensor elements, capable of detecting visible light with high sensitivity. CdSe-and CdS-based nanomaterials such as quantum dots and NWs have been extensively explored in the past, and their superb optical and opto-electric...

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Section: Resultsmentioning

confidence: 99%

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Fan

Jacobson

et al. 2008

Proc. Natl. Acad. Sci. U.S.A.

239

235

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“…This second case is so far the more successful approach and will be discussed in the following. In this EBL approach the sample is spin coated with PMMA, then the electrode pattern is aligned with respect to the nanorod that shall be contacted, and the PMMA is exposed with the electron beam [210][211][212]. In the case of electron or focused ion beam induced metal deposition no PMMA deposition is needed since the metal is directly deposited by the beam.…”

Section: Single Nanorod Conductance Probed In Planar Nano-junctionsmentioning

confidence: 99%

Physical properties of elongated inorganic nanoparticles

et al. 2011

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“…8 Spherical, columnar and branched nanocrystals have been shown to exhibit single electron transistor behaviour. [9][10][11] Vertical alignment of semiconductor nanorods in an organised assembly would potentially allow each rod (single electron transitor) in a 2D array to be contacted individually at the end facet for macroscopic integration at < 5 nm separation. Self assembled computer memory based on vertical aligned magnetic nanorod arrays are also sought as the magnetic coercivity (Hc) can be controlled along the nanorod length.…”

mentioning

confidence: 99%