Electroluminescence as internal light source for measurement of the photonic strength of random porous GaP

Driel, A.F. van; Vanmaekelbergh, D.; Kelly, John J.

doi:10.1063/1.1748839

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…The narrow emission at 424 nm appears below U Յ −3 V and is much less pronounced than from SiC uniformly etched to 10 m. No clear correlation was observed between the thickness of the porous layer and the I N /I B ratio for samples with an etched depth between 1 and 11 m. Scattering and absorption of emitted light in the porous layer can therefore be excluded. 26 The substantial increase in luminescence intensity is attributed to the much larger surface area of the porous electrode in contact with the electrolyte solution, leading to an increase in the flux of injected holes.…”

Section: D50mentioning

confidence: 99%

Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

Dorp

Otter

Hijnen

et al. 2009

Electrochem. Solid-State Lett.

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The influence of electrochemical etching on the electroluminescence properties of n-type 6H-and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.

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Section: D50mentioning

confidence: 99%

Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

Dorp

Otter

Hijnen

et al. 2009

Electrochem. Solid-State Lett.

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“…After the discovery of visible photoluminescence in porous silicon [1], considerable interest has been focused on the investigation of pore formation in semiconductors, especially in III-V semiconductors due to their potential applications in quantum devices and photonic-bandgap crystals [2], etc. Various methods for the self-formation of nanopore arrays have been established, among which electrochemical etching has proved to be a powerful tool for the fabrication of two-dimensional nanostructures on the surface of III-V semiconductors, such as InP in HCl [3][4][5][6][7], GaP in H 2 SO 4 [8,9], and GaAs in HCl and HF electrolytes [10,11].…”

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confidence: 99%

Formation of uniform and square nanopore arrays on (100) InP surfaces by a two-step etching method

Zeng¹,

Zheng²,

Ma³

et al. 2006

Nanotechnology

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Uniform and square single-crystal InP nanopore arrays have been successfully fabricated on a (100) n-InP surface by a two-step etching method. The characteristic of slow etching rates in four equivalent crystalline (011) facets of (100) n-InP in a mixture of pure HCl and pure H(3)PO(4) has been found, which is the main reason for the formation of square single-crystal InP nanopores. The distribution of nanopores can be closely associated with the distribution of carriers in the semiconductor during the electrochemical etching process. An oscillating behaviour of current has been observed, which can probably be attributed to the oscillations in concentration of the electrolyte at the pore tips caused by diffusion of the electrolyte in the nanopore channels.

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“…As the thickness of the sample increases during etching, light produced at the pore front has to cross the multiple scattering layer before escaping. It is possible to argue that monitoring the luminescence spectrum as a function of time (i.e., thickness) allows an in situ measure of the total transmission through the sample [154]. At a wavelength below the band gap of GaP, absorption dominates and an exponential decay with the thickness of the porous layer is found.…”

Section: Electroluminescencementioning

confidence: 99%

“…The applicability of the total transmission expectation (Eq. 2.62) is not discussed in reference[154].…”

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confidence: 99%

Multiple light scattering in porous gallium phosphide

Bret

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where E i and I i are respectively the field and intensity of light propagating only along the path i. The sum of intensities along all the paths leads to the diffusion result, as in Eq. 1.3. The interference term can not in practice be calculated for a single configuration of the distribution of scatterers, but statistical properties (intensity distributions or spatial correlations for example) can be derived [12-15]. where the ensemble-average of fields from path j i, i * is 0 for independent scatterers. The fields from the time-reversed paths i and i * are equal, provided the time-reversal symmetry is not broken [17]. Time-reversed paths always interfere constructively, and therefore double the intensity of light returning to the origin A, compared to the case when no interference is present. If the point A is not inside the multiple-scattering medium, but is outside, in the far field, the factor 2 increase in intensity of I A→A compared to I A→B leads to the so-called coherent or enhanced backscattering (EBS). In the exact backscattered direction, where the incident and outgoing wave vectors are opposite, the interference of the time-reversed paths is fully constructive and the intensity is twice the diffusion expectation. In practice, the EBS is a cone of light, on top of the diffuse background, as showed in Fig. 1.3b. At exact backscattering (in the center of Fig. 1.3b), a multiple-scattering sample reflects up to twice as much intensity as outside the EBS cone. The EBS cone is characteristic of the multiple scattering of waves, and its width is related to the two length scales involved, and λ respectively, as λ/. The EBS cone is fully derived and described in section 2.6. 1.2.3 Anderson localization The constructive interference of time-reversed paths leads to a more dramatic effect than the EBS. The higher intensity I A→A compared to I A→B means that the probability of a photon

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Electroluminescence as internal light source for measurement of the photonic strength of random porous GaP

Cited by 7 publications

References 17 publications

Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

Formation of uniform and square nanopore arrays on (100) InP surfaces by a two-step etching method

Multiple light scattering in porous gallium phosphide

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