Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells

Yi, Tian-Cheng; Lu, Ming; Yang, Kui; Xiao, Pengfei; Wang, Rong

doi:10.1016/j.nimb.2014.06.006

Cited by 7 publications

(4 citation statements)

References 10 publications

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“…These very high efficiency solar devices based on III-V compounds are still the best approach to increase the specific and the solar arrays lifetime. Actually, some key features are mandatory in such equipments: the first one is radiation resistance, due to the fact that during their operative life a strong bombardment of charged electrons and protons is present [4][5][6][7][8][9][10][11][12]; the second issue is the need of low-weight devices with high specific power [3]. In addition to these, a further request recently has arisen of increasing versatility and adaptability to the spacecrafts by having bendable and mechanically flexible solar arrays [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

et al. 2019

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The most common multi-junction solar cell arrangement employs the InGaP/InGaAs/Ge configuration, which is usually exploited for high-efficiency space applications. We here test the reliability of a triple-junction device with an innovative low-thickness and flexible configuration: this is investigation is aimed at providing its main macroscopic features which must be taken into account for their applications. Notably, the specific optical and electrical features and the performance variation of these thin solar cells are systematically analyzed, both in begin-of-life (BOL) configuration and after irradiation (end-of-life, EOL) by either electrons or protons. Measurements of I -V curves, with correlated parameters, and of spectral responses (external quantum efficiency) are accomplished on several BOL and EOL samples: this allows to describe the inhomogeneous damage of the subjunctions and to follow the evolution of the solar cell physical quantities as a function of the kind and the amount of irradiation. Finally, photoluminescence emission spectra are measured, pointing out the effect of particle bombardment on luminescent features. Our results show that these innovative solar devices allow for the combination of high specific power, mechanical flexibility, high performance, and strong resistance to particle irradiation, making them an excellent option for space applications.

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Section: Introductionmentioning

confidence: 99%

Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

et al. 2019

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“…their performance, making radiation hardness a fundamental feature to be taken into account. [6][7][8][9][10][11][12][13][14] In the cited 3J configuration, the most robust subcell was demonstrated to be the InGaP top subcell 2,6 ; on the other hand, the middle junction is, under irradiation, the weakest subcell. 6,15 For these reasons, handling the peculiar multijunction current limitation effect requires that the 3J InGaP/InGaAs/Ge spatial devices are generally tailored in the so-called top-limited configuration, so that each middle and bottom cell supplies current levels higher than the top one: Then the final current of the cell is limited by the current produced by the top subcell.…”

Section: Introductionmentioning

confidence: 97%

“…Such a bombardment strongly modifies the solar devices, and it generally decreases their performance, making radiation hardness a fundamental feature to be taken into account. ()…”

Section: Introductionmentioning

confidence: 99%

Measurement of the limiting subcell in multijunction space solar devices by restricted‐wavelength‐range illumination

Arcadi

Parravicini

Campesato

et al. 2018

Progress in Photovoltaics

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During their employment in space applications, InGaP/InGaAs/Ge‐based multijunction solar cells undergo strong particle bombardments that decrease their performances. As InGaP is more resistant to radiation, the whole device is usually designed in “top‐limited” configuration. Then the development of high‐efficiency and reliable devices needs standard techniques for identifying the limiting subcell before and after irradiation. We here present a specific method to determine the limiting subcell and matching current in multijunction solar cell. This approach is based on using simultaneously a solar simulator and a suitable supplemental lamp for illuminating the cell in a restricted wavelength range where the top subcell only responds. The technique is tested on beginning‐of‐life and irradiated 3‐junction InGaP/InGaAs/Ge solar cells, and its reliability is discussed.

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“…[2][3][4][5] The main cause of the degradation was considered to be the defects generated by the interaction of the radiation with the atoms in the solar cells. 6,7) A displacement damage dose (DDD) model 8) was proposed for the evaluation of the performance degradation of solar cells irradiated with various radiations in a wide energy range. This model requires only few ground tests by considering the non-ionizing energy loss (NIEL) of incident electrons and protons, which is used for generating displacement defects.…”

Section: Introductionmentioning

confidence: 99%

Performance degradation of InGaP solar cells due to 70 keV electron irradiation

Okuno¹,

Okuda²,

Oka³

et al. 2017

Jpn. J. Appl. Phys.

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The performance of InGaP solar cells irradiated with electron beams at energies lower than the damage threshold is degraded. To investigate the irradiation effect, GaAs and InGaP solar cells are irradiated with 70 keV electron beams. Measurements of the electroluminescence and external quantum efficiency, in addition to the light current voltage measurement, are conducted. The results show that the performance of the InGaP solar cell, mainly open-circuit voltage, is degraded and affected by nonradiative recombination centers, while the performance of the GaAs solar cell is hardly degraded. The comparison of the experimental results with the prediction from the displacement damage dose model suggests that the non-ionizing energy loss of electrons is the main factor for evaluating the degradation of the InGaP cell caused by electron beams in a relatively low energy range.

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Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells

Cited by 7 publications

References 10 publications

Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

Measurement of the limiting subcell in multijunction space solar devices by restricted‐wavelength‐range illumination

Performance degradation of InGaP solar cells due to 70 keV electron irradiation

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