Electroless plating of low-resistivity Cu–Mn alloy thin films with self-forming capacity and enhanced thermal stability

Chen, Sung-Te; Chen, Giin-Shan

doi:10.1016/j.jallcom.2015.04.211

Cited by 11 publications

(8 citation statements)

References 37 publications

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“…In general, Mn alloys ,, and oxides ,,, can be deposited via EL processes, primarily for applications as diffusion barriers to control Cu electromigration in ICs and modified electrodes for catalysis of electrochemical reactions. For example, Šljukić and co-workers have prepared CoMn alloys analogous to CoMo systems previously described ( vide supra ) for electrocatalysis of the HER and oxygen evolution reaction (OER) at low η in alkaline solution.…”

Section: Elementsmentioning

confidence: 99%

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Electroless Metallization of the Elements: Survey and Progress

Turró

Dressick

2022

ACS Appl. Electron. Mater.

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The electroless plating of metals and their alloys, oxides, and chalcogenides represents a critically important technology for the automotive, aerospace, machine tools, and, especially, the electronics industries. Since the initial efforts involving the plating of industrially important metals, such as Ni, Co, Cu, Ag, and Au, in the mid-20th century, the process has evolved to encompass a growing number of elements. At the same time, this expansion in the palette of accessible metals has enabled progress in these industries and evoked new nonconventional applications. In this review, we collect and survey available electroless processes in aqueous and organic solvent systems for each element organized according to position in the Periodic Table as a resource for the reader. Examples illustrating progress in the field are presented and are described in sufficient detail to be useful and understandable for both the expert and nonexpert. Given the historical importance of electronics as a driver for development of electroless processes, examples are electronics-related where possible. However, we strive to also include examples of applications in nontraditional fields to provide the reader with a sense of generality available for electroless methods. The review closes with an outlook for the field and a challenge to scientists and engineers to adapt electroless processes for new applications to continue the growth of the field.

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Section: Elementsmentioning

confidence: 99%

“…Chen and Chen 241 deposit "dilute" CuMn alloys containing ∼0.1 at. % Mn on Ni 0 seed-catalyzed silicon dioxide surfaces using an alkaline EL Cu bath containing formaldehyde (HCHO) and added MnSO 4 .…”

Section: ■ Elementsmentioning

confidence: 99%

Electroless Metallization of the Elements: Survey and Progress

Turró

Dressick

2022

ACS Appl. Electron. Mater.

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“…13 Cu(Mn) films appear to be the most promising self-forming Cu alloy materials for future interconnects. [13][14][15][16][17][18][19][20][21] In particular, upon forming-gas annealing, the doped Mn is readily to diffuse to the interface, forming a Mn oxide layer which acts as the self-forming barrier to prevent Cu diffusion. [15][16][17][18][19][20][21] Currently, the majority of Cu(Mn) films are deposited by sputter deposition which could be problematic because of the lack of film conformity.…”

mentioning

confidence: 99%

“…The residual Mn increases the electrical resistivity of the film. 14 Thus, the Cu(Mn) films usually act only as the seed layer for the subsequent Cu electrodeposition, not interconnect material itself. [14][15][16][17][18][19][20][21][22] To circumvent these problems, an ultrathin (2 nm) chemical vapor deposited Mn film has been used as the diffusion barrier of Cu film.…”

mentioning

confidence: 99%

“…14 Thus, the Cu(Mn) films usually act only as the seed layer for the subsequent Cu electrodeposition, not interconnect material itself. [14][15][16][17][18][19][20][21][22] To circumvent these problems, an ultrathin (2 nm) chemical vapor deposited Mn film has been used as the diffusion barrier of Cu film. 23 By annealing the stacked Cu/Mn/p-SiOCH in a forming gas, the Mn can be oxidized into MnO x as an interfacial barrier layer between the p-SiOCH and Cu.…”

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confidence: 99%

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A 2-nm-Thick Mn Oxide on a Nitrogen-Stuffed Porous Carbon-Doped Organosilica as a Barrier of Cu Films

Fang¹,

Yu²,

Wang³

et al. 2018

ECS J. Solid State Sci. Technol.

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An ultrathin (e.g., ≤ 2 nm) barrier is needed for fabricating Cu interconnects associated with porous low-k (p-SiOCH) dielectrics with a high aspect ratio trenches/vias in the ultra large scale integrated circuits. To implement successfully the ultrathin Mn oxide barrier on the p-SiOCH dielectric for Cu interconnection, understanding is needed of how the Mn oxide is formed. This study investigated a 2-nm-thick Mn oxide film, deposited by sputtering with a biased-filter intermediating, as the barrier layer to prevent Cu from diffusion. Phase formation of the as-deposited Mn oxide was examined by X-ray photoelectron spectroscopy and X-ray absorption near edge spectroscopy to confirm the formation of Mn 2 O 3 . The experimental results indicated that the formation of Mn 2 O 3 barrier is highly effective in preventing the Cu film from diffusion and agglomeration. Thermal stability of the Cu film increased up to 550 • C, 250 • C greater than the p-SiOCH dielectric without the Mn 2 O 3 film, when combining the nitrogen-stuffed treatment on the p-SiOCH dielectric and annealed the Mn 2 O 3 before the Cu deposition. The structures of Mn 2 O 3 barrier and p-SiOCH dielectric after nitrogen-stuffing treatments were analyzed to evaluate their applicability in Cu interconnects.

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