Electroless copper plating using hypophosphite as reducing agent

Cheng, DingXin; Xu, Wanjian; Zhang, Z.Y.; Yiao, Z.H.

doi:10.1016/s0026-0576(97)81804-1

Cited by 35 publications

(26 citation statements)

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“…diamond [29]. Beffort et al [30] investigated the Al7Si/diamond system processed by gas pressure assisted infiltration and observed a 50-200-nm-thick amorphous interface layer.…”

Section: (A) (B)mentioning

confidence: 99%

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

et al. 2018

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The existence of interfacial carbides is a well-known phenomenon in Al/diamond composites, although quantitative analyses are not described so far. The control of the formation of interfacial carbides while processing Al(Si)/diamond composites is of vital interest as a degradation of thermophysical properties appears upon excessive formation. Analytical quantification was performed by GC-MS measurements of gaseous species released upon dissolving the matrix and interfacial reaction products in aqueous NaOH solutions and the CH 4 /N 2 ratio of the evolving reaction gases can be used for quantification. Although the formation of interfacial carbides is significantly suppressed by adding Si to Al, also a decline in composite thermal conductivity is observed in particular with increasing contact time between the liquid metal and the diamond particles during gas pressure infiltration. Furthermore, surface termination of diamond particles positively affects composite thermal conductivity as oxygenated diamond surfaces will result in an increase in composite thermal conductivity compared to hydrogenated ones. In order to understand the mechanisms responsible for all impacts on the thermal conductivity and thermal conductance behaviour, the metal/diamond interface was electrochemical etched and characterized by SEM. Selected specimens were also cut by an ultrashort pulsed laser system to characterize interfacial layers at the virgin cross section in the reactive system Al/diamond.

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“…diamond [29]. Beffort et al [30] investigated the Al7Si/diamond system processed by gas pressure assisted infiltration and observed a 50-200-nm-thick amorphous interface layer.…”

Section: (A) (B)mentioning

confidence: 99%

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

et al. 2018

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“…12 Conventional EC plating baths usually use formaldehyde (HCHO) as the reducing agent. 13 It has been found that this bath may release hazardous gases during operation, and recently glyoxylic acid 14,15 and hypophosphite (NaH 2 PO 2 ) [16][17][18][19] have been used to replace HCHO. However, the catalytic activities of metals for the oxidation of hypophosphite decreased in the following order: Au > Ni > Pd > Co > Pt > Cu; thus, the reaction of EC deposition in hypophosphite-type baths was impossible without a catalyst.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, Ni 2+ ions were used as a catalyst for the EC deposition. The reactions were as follows 16 :…”

Section: Introductionmentioning

confidence: 99%

“…Nickel only plays the role of a catalyst for the hypophosphite oxidation. 8,[16][17][18][19] SiC is a useful electronic material in making important semiconductor materials for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, and has high material strength with excellent corrosion, erosion resistance, thermal conductivity and mechanical and physical properties. 20 SiC particles are of great technological importance for their applications as reinforcement of metal matrix composites and structural ceramics.…”

Section: Introductionmentioning

confidence: 99%

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Effect of SiC on the corrosion resistance of electroless Cu–P–SiC composite coating

et al. 2010

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In this work, Cu-P-SiC composite coatings were deposited via electroless plating with the addition of sodium hypophoshite (NaH 2 PO 2 ) as a reducing agent. The coating compositions deposited were determined by using energy dispersive X-ray spectroscopy (EDX). The surface morphology of the coatings that were analyzed using scanning electron microscopy (SEM) showed that SiC particles were uniformly distributed by virtue of surfactant addition and mechanical stirring. The anti-corrosion properties of Cu-P and Cu-P-SiC coatings in NaCl and HCl solutions were investigated by the weight loss and potentiodynamic polarization techniques. The results showed that the corrosion resistance of Cu-P-SiC coatings was superior to that of electroless Cu-P coatings and carbon steel substrates in various concentrations of NaCl and HCl solutions.

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“…Commercial electroless copper plating solutions often use formaldehyde or its derivatives as reducing agents and are operated at pH values above 11 [4]. Furthermore, it has been found that this bath may release hazardous gases during operation [5]. Therefore, previous paper has investigated electroless copper solutions using nonformaldehyde reducing agents such as dimethylamine borane (DMBA) [6], sodium hypophosphite [7,8], and cobalt(II)-ethylenediamine complex [9].…”

Section: Introductionmentioning

confidence: 99%

Effects of K4Fe(CN)6 on electroless copper plating using hypophosphite as reducing agent

Gan

Liu

et al. 2007

J Appl Electrochem

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K 4 Fe(CN) 6 was used to improve the microstructure and properties of copper deposits obtained from hypophosphite baths. In electroless copper plating solutions using hypophosphite as the reducing agent, nickel ions (0.0038 M with Ni 2+ /Cu 2+ mole ratio 0.12) was used to catalyze hypophosphite oxidation. However, the color of the copper deposits was dark or brown and its resistivity was much higher than that obtained in formaldehyde baths. The effects of K 4 Fe(CN) 6 on the deposit composition, resistivity, structure, morphology and the electrochemical reactions of hypophosphite (oxidation) and cupric ion (reduction) have been investigated. The deposition rate and the resistivity of the copper deposits decreased significantly with the addition of K 4 Fe(CN) 6 to the plating solution and the color of the deposits changed from dark-brown to copper-bright with improved uniformity. The nickel and phosphorus content in the deposits also decreased slightly with the use of K 4 Fe(CN) 6 . Smaller crystallite size and higher (111) plane orientation were obtained by addition of K 4 Fe(CN) 6 . The electrochemical current-voltage results show that K 4 Fe(CN) 6 inhibited the catalytic oxidation of hypophosphite at active nickel sites and reduced the reduction reaction of cupric ions on the deposit surface by adsorption on the electrode. This results in lower deposition rate and a decrease in the mole ratio of NaH 2 PO 2 / CuSO 4 consumed during plating.

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Electroless copper plating using hypophosphite as reducing agent

Cited by 35 publications

References 0 publications

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

Effect of SiC on the corrosion resistance of electroless Cu–P–SiC composite coating

Effects of K4Fe(CN)6 on electroless copper plating using hypophosphite as reducing agent

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