2004
DOI: 10.1002/elps.200406083
|View full text |Cite
|
Sign up to set email alerts
|

Electrokinetic pumping and detection of low‐volume flows in nanochannels

Abstract: Electrokinetic pumping of low-volume rates was performed on-chip in channels of small cross sectional area and height in the sub-microm range. The flow was detected with the current monitoring technique by monitoring the change in resistance of the fluid in the channel upon the electroosmosis-driven displacement of an electrolyte solution by a second electrolyte solution. Flow rates in the order of 0.1 pL/s were successfully generated and detected. The channels were fabricated with the sacrificial layer techno… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
17
1

Year Published

2010
2010
2015
2015

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 16 publications
(18 citation statements)
references
References 21 publications
0
17
1
Order By: Relevance
“…However, the PL underneath the cantilever will have a tapered profile as the SL is covering the PL during part of the SLE time [19]. This effect is shown in Fig.…”
Section: Tapered Gapmentioning
confidence: 99%
“…However, the PL underneath the cantilever will have a tapered profile as the SL is covering the PL during part of the SLE time [19]. This effect is shown in Fig.…”
Section: Tapered Gapmentioning
confidence: 99%
“…A number of methods have been exploited to manipulate fluid flow in microchannels,37 with pressure driven38 and electro‐osmotic flow39 being the most common, although alternative forces, such as acoustic streaming40 and thermocapillarity41 have also been demonstrated. The uniform velocity profile of electro‐osmotic flow (EOF) avoids many of the diffusion fluctuations that are present in pressure driven flow.…”
Section: Fluidics Of Imer Devicesmentioning
confidence: 99%
“…20,[26][27][28] Very long etching times associated with sacrificial methods result in a noticeable difference of exposure to the etchant along the channel. 29 The walls at the entrance of the channel are more exposed to the etching solution than in the middle. Even with the excellent etching selectivity conferred by the couple SiO 2 /Si 3 N 4 , a tapering (32 nm mm À1 of channel) of the structure has been measured.…”
Section: Surface Micromachiningmentioning
confidence: 99%