Electroforming and switching effects in yttrium oxide

Pergament, A. L.; Malinenko, V. P.; Tulubaeva, O. I.; Алешина, Л. А.

doi:10.1002/pssa.200306804

Cited by 11 publications

(27 citation statements)

References 29 publications

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“…8,9 Pan et al reported a bipolar switching behavior in TaN-Y 2 O 3 -Ru structures, 8 while unipolar switching was found in the Al-Y 2 O 3 -Al structure in our work. The difference in the switching behavior (i.e., bipolar versus unipolar RS) could be a result of the difference in the Y 2 O 3 film quality.…”

contrasting

confidence: 70%

Unipolar Memristive Switching in Yttrium Oxide and RESET Current Reduction Using a Yttrium Interlayer

Ren

Liu

et al. 2012

Electrochem. Solid-State Lett.

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We report on the unipolar resistive switching (RS) phenomenon in yttrium oxide (Y 2 O 3 ) metal-insulator-metal structures. The RS behavior for Y 2 O 3 shows a superior ON/OFF resistance ratio of greater than 10 6 and good memory retention reliability performance of at least 10 6 seconds at room temperature. By adding a thin yttrium (Y) layer to form a Y-Y 2 O 3 bilayer structure, a reduction in the RESET current by two orders of magnitude is achieved, which is advantageous in reducing the total switching energy consumption for resistive random access memory application.The resistive switching (RS) behavior in metal chalcogenides, metal oxides and some organic compounds has been extensively investigated for potential application in the next-generation non-volatile memory devices. Several mechanisms have been proposed to explain the RS phenomenon. Since the active area in such devices is always buried under a top electrode, visualization and analysis of the conductive path are rarely carried out. Hence, obtaining physical evidence of the actual switching mechanism still remains difficult. Nevertheless, a few mechanisms that are more widely accepted have been proposed to explain the memory resistive (memristive) switching phenomenon. These mechanisms include the reduction of migrating metal cations at the cathode resulting in the formation of a metal filament, 1, 2 and the drift of positively-charged oxygen vacancies to form or disperse local conductive channels through the metal/oxide electronic barrier. 1-3 In transition metal oxides, thermal effects inducing the formation and disruption of the conductive filament is another plausible mechanism for the fuse-antifuse type of switching. 2,4,5 In this letter, we report on the unipolar RS behavior in yttrium oxide (Y 2 O 3 ) metal-insulator-metal (MIM) structures. Although bipolar RS has been reported previously for Y 2 O 3 , unipolar RS will be demonstrated for Y 2 O 3 in this work. We found that the reduction in RESET current (I RESET ) in the Y 2 O 3 MIM structure could be achieved by adding a thin yttrium metal (Y) interlayer to form a Y-Y 2 O 3 bilayer structure. This bilayer structure could therefore provide a new direction for resistive random access memory (RRAM) application with reduced energy consumption.In the MIM structure, the bottom electrode of aluminum (Al) was thermally evaporated on the silicon dioxide/silicon (SiO 2 /Si) substrate. If platinum (Pt) is required as the bottom electrode, commercially available Pt/Ti/SiO 2 /Si substrates were used. A 40-nm thick Y 2 O 3 thin film was then deposited by sputtering using the Anelva L3325FH multi-target sputtering machine. Prior to the Y 2 O 3 deposition, the sputtering chamber was pumped down to a base pressure of 10 −6 Torr. Sputtering was carried out when the chamber pressure had stabilized at 0.3 kPa (∼2.25 Torr). For the bilayer structure, a 10-nm thick Y layer was sputtered onto the bottom electrode before depositing the 40-nm thick Y 2 O 3 thin film; all these operations were performed without break...

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confidence: 70%

Unipolar Memristive Switching in Yttrium Oxide and RESET Current Reduction Using a Yttrium Interlayer

Ren

Liu

et al. 2012

Electrochem. Solid-State Lett.

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“…Electrical forming results in the changes in oxygen stoichiometry conditioned by the ionic processes in electric fields close to the MOM structure breakdown field. This picture is quite similar to what is observed in many other TMOs exhibiting the insulator-to-metal transitions [15,22,27,[33][34][35]. The results obtained concerning the threshold switching in thin-film MOM structures with molybdenum oxides indicate the possibility of application of this material in oxide electronics as micro-and nanostructured switching elements and other electronic devices.…”

Section: Resultssupporting

confidence: 85%

“…Next we note that, unlike the most other TMOs [22,27], the process of electroforming in Mo-based structures was hindered, similarly to that in structures based on manganese and yttrium oxides [33,34]; that is, the conventional electrical breakdown often occurred, not the formation of a switching channel. However, for the Mo oxide films prepared by vacuum deposition, the processes of electroforming and switching were more stable which allowed in this case observation of the transformation of I-V curves at a temperature change.…”

Section: Resultsmentioning

confidence: 83%

Electrical Switching in Thin Film Structures Based on Molybdenum Oxides

Pergament

Malinenko

Алешина

et al. 2014

Journal of Experimental Physics

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We report on the experimental study of electrical instabilities in thin film structures on the basis of molybdenum oxides. Thin films of molybdenum oxide are obtained by thermal vacuum evaporation and anodic oxidation. The results of X-ray structural analysis, investigation of optical and electrical properties, are presented. It is shown that the initial vacuum-deposited oxide represents amorphous MoO 3 . In the MOM (metal-oxide-metal) structures with Mo oxide films obtained by the two methods, the effect of electrical switching with an S-shaped current-voltage characteristic is found. We put forward a hypothesis according to which the switching mechanism is associated with the development of electrical instability caused by the insulator-to-metal transition in Mo 8 O 23 . The switching channel, comprising this lower valence oxide, emerges in the initial film during the process of electrical forming of the MOM structure. The obtained results indicate the possibility of application of these structures in oxide micro-and nanoelectronics as electronic switches and other electronic devices.

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“…Quite surprisingly in fact, the RS effect is ubiquitous in TMO. It has already been reported in a very large number of systems, ranging from simple binary oxides such as CeO 2 , Y 2 O 3 , ZrO 2 , TiO 2 [3][4][5][6], and the classic Mott insulators NiO and Fe 2 O 3 [7], to complex perovskites [8], including cuprates such as La 2 CuO 4 [9] and Bi 2 Sr 2 CaCu 2 O 8y [10]. Among the first materials to be systematically investigated we note the Ca doped manganites [11][12][13][14], already popular due to their colossal magnetoresistance [15][16][17].…”

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confidence: 99%

Mechanism of Electric-Pulse-Induced Resistance Switching in Manganites

et al. 2007

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We investigate the electric-pulse-induced resistance switching in manganite systems. We find a "complementarity" effect where the contact resistance of electrodes at opposite ends show variations of opposite sign and is reversible. The temperature dependence of the magnitude of the effect reveals a dramatic enhancement at a temperature T*, below the metal-insulator transition. We qualitatively capture these features with a theoretical model, providing evidence for the physical mechanism of the resistance switching. We argue that doping control of the electronic state of the oxide at the interfaces is the mechanism driving the effect.

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Electroforming and switching effects in yttrium oxide

Cited by 11 publications

References 29 publications

Unipolar Memristive Switching in Yttrium Oxide and RESET Current Reduction Using a Yttrium Interlayer

Unipolar Memristive Switching in Yttrium Oxide and RESET Current Reduction Using a Yttrium Interlayer

Electrical Switching in Thin Film Structures Based on Molybdenum Oxides

Mechanism of Electric-Pulse-Induced Resistance Switching in Manganites

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