Mechanism of Electric-Pulse-Induced Resistance Switching in Manganites

Quintero, M.; Lévy, P.; Leyva, A. G.; Rozenberg, M. J.

doi:10.1103/physrevlett.98.116601

Cited by 126 publications

(81 citation statements)

References 26 publications

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“…3a cannot be due to resistive switching 29 caused by the large (B10 6 V cm À 1 ) electric field across the tunnel barrier since this hysteresis depends on the relative magnetic alignment of the electrodes and it is not observed in State (1 0 ), and resistance toggles between the very same two values with electric and magnetic field (see Fig. 3b).…”

Section: Discussionmentioning

confidence: 98%

Reversible electric-field control of magnetization at oxide interfaces

et al. 2014

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Electric-field control of magnetism has remained a major challenge which would greatly impact data storage technology. Although progress in this direction has been recently achieved, reversible magnetization switching by an electric field requires the assistance of a bias magnetic field. Here we take advantage of the novel electronic phenomena emerging at interfaces between correlated oxides and demonstrate reversible, voltage-driven magnetization switching without magnetic field. Sandwiching a non-superconducting cuprate between two manganese oxide layers, we find a novel form of magnetoelectric coupling arising from the orbital reconstruction at the interface between interfacial Mn spins and localized states in the CuO 2 planes. This results in a ferromagnetic coupling between the manganite layers that can be controlled by a voltage. Consequently, magnetic tunnel junctions can be electrically toggled between two magnetization states, and the corresponding spin-dependent resistance states, in the absence of a magnetic field.

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Section: Discussionmentioning

confidence: 98%

Reversible electric-field control of magnetization at oxide interfaces

et al. 2014

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“…More information about the measurement technique and simultaneous contact analysis can be seen in Ref. [34].…”

Section: Appendix F: Experimental Detailsmentioning

confidence: 99%

“…4, we show the systematic dependence of RðtÞ as a function of the applied external (electronic) current. Along with the simulations of the VEOVM, we also present our experimental results measured on a manganite-based (La 0.325 Pr 0.300 Ca 0.375 MnO 3 ) memristive device [34][35][36][37][38]. The experimental setup and device are described in detail in Appendix F and in Ref.…”

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confidence: 99%

Shock Waves and Commutation Speed of Memristors

et al. 2016

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Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect-the commutation speed. DOI: 10.1103/PhysRevX.6.011028 Subject Areas: Condensed Matter Physics, Materials Science, Nonlinear DynamicsThe information age we live in is made possible by a physical underlayer of electronic hardware, which originates in condensed-matter physics research. Despite the great progress made in recent decades, the demand for faster and power-efficient devices continues to grow. Thus, there is urgent need to identify novel materials and physical mechanisms for future electronic-device applications. In this context, transition metal oxides (TMOs) are attracting much attention for nonvolatile memory applications [1]. In particular, TMO are associated with the phenomenon of resistive switching (RS) [2] and the memristor device [3], which is emerging as a competitive technology for nextgeneration electronics [1,[4][5][6][7][8][9][10]. The RS effect is a large, rapid, nonvolatile, reversible change of the resistance, which may be used to encode logic information. In the simplest case, one may associate high and low resistance values to binary states, but multibit memory cells are also possible [11,12].Typical systems where RS is observed are two-terminal capacitor-like devices, where the dielectric might be a TMO and the electrodes are ordinary metals. The phenomenon occurs in a strikingly large variety of systemsranging from simple binary compounds, such as NiO, TiO 2 , ZnO, Ta 2 O 5 , HfO 2 , and CuO, to more complex perovskite structures, such as superconducting cuprates and colossal magnetoresistive manganites [2,4,6,9,13].From a conceptual point of view, the main challenges for a nonvolatile memory are as follows: (i) to change its resistance within nano seconds (required for modern electronics applications), (ii) to be able to retain the state for years (i.e., n...

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“…forming and rupturing of conduction filaments [4][5][6][7] or on the migration of oxygen vacancies. [8][9][10] Recently, a new mechanism of RS based on self-trapped electrons and holes has been proposed. [11][12][13] For example, Chen et al show the evidence of current injection modulation of saturation magnetization in their RS system.…”

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confidence: 99%

Magnetic field control of hysteretic switching in Co/Al2O3 multilayers by carrier injection

et al. 2011

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We propose a theoretical model of magnetic field dependence of hysteretic switching in magnetic granular system. The model is based on the self-trapped electrons mechanism. Our calculations show that the switching voltage may be significantly decreased with increasing the magnetic field. The underlying mechanism is the influence of the magnetic field on electron occupation of the conduction band, which depends on the materials used in magnetic granular system, concentration of magnetic granules in the insulating matrix, applied voltage, and the charge accumulation on the granules. We support our theoretical calculations by measuring the magnetic field dependence of resistive switching behaviour in Co/Al2O3 granular multilayers. Our experimental results are in qualitative agreement with the proposed theory

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Mechanism of Electric-Pulse-Induced Resistance Switching in Manganites

Cited by 126 publications

References 26 publications

Reversible electric-field control of magnetization at oxide interfaces

Reversible electric-field control of magnetization at oxide interfaces

Shock Waves and Commutation Speed of Memristors

Magnetic field control of hysteretic switching in Co/Al2O3 multilayers by carrier injection

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