Electrodeposition of Serpentine CoCu/Cu Multilayered GMR Micro-device

Abstract

A serpentine microdevice consisting of Co/Cu multilayers were galvanostatically electrodeposited onto a silicon substrate patterned via UV lithography in a two-step process. SEM was used to investigate the morphology of the deposit and edge effect regions were identified. The magnetoresistance was measured with the current perpendicular to the magnetic field along the long length area and parallel to the magnetic field at the short length area due to the serpentine shape. The influence of line width, bilayer number and a pulse train scheme on the giant magnetoresistive property of patterned thin films were examined.