Electrode Temperature Effect in Narrow-Gap Reactive Ion Etching

Tsukada, Tsutomu; Mashiro, Supika; Mashimo, Kimiko

doi:10.1143/jjap.32.4850

Cited by 13 publications

(6 citation statements)

References 4 publications

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“…After all the fluorocarbon material has been removed from the walls, the deposition precursor density in the gas phase and thus the passive deposition rate at the wafer will decrease again ͑but still be higher than the initial rate͒. This is consistent with results reported by Tsukada et al, 18 who reported that polymer deposition on the coldest surface is faster than on other surfaces. The reason that the maximum in the deposition rate occurs at a higher temperature in C 3 F 6 /H 2 than in C 3 F 6 is consistent with the data in Fig.…”

Section: Fluorocarbon Depositionsupporting

confidence: 88%

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Schaepkens

Bosch

Standaert

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with various feedgases, such as CHF 3 , C 3 F 6 , and C 3 F 6 /H 2 , indicate that the reactor wall temperature is an important parameter in the etch process. Adequate temperature control can increase oxide etch selectivity over nitride and silicon. The loss of fluorocarbon species from the plasma to the walls is reduced as the wall temperature increased. The fluorocarbon deposition on a cooled substrate surface increases concomitantly, resulting in a more efficient suppression of silicon and nitride etch rates, whereas oxide etch rates remain nearly constant.

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Section: Fluorocarbon Depositionsupporting

confidence: 88%

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Schaepkens

Bosch

Standaert

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…This temperature sensitivity to lower electrode temperature was noted previously for highselectivity oxide etch processes. [15][16][17] The mechanism for this selectivity increase is speculated to be an increased polymer mobility and enhanced polymer coverage at the bottom of the etched feature at high substrate temperatures. This increased polymer thickness provides both the selectivity increase observed, and the reduction in etch rate that is noted.…”

Section: Process Resultsmentioning

confidence: 99%

“…Standard parallel-plate RIE reactors can often meet many of the process requirements, but the oxide etch rate and selectivity in these reactors is unacceptably low as a result of the low plasma density. 16 An ideal solution would be an enhancement of the RIE parallel-plate reactor in which an intermediate plasma density could be provided such that enhanced selectivity with adequate etch rate would be achieved at a reactor operating pressure of 50-100 mTorr. The reactor described here meets many of the requirements for the future generation of plasma etch equipment.…”

Section: Discussionmentioning

confidence: 99%

High selectivity plasma etching of silicon dioxide with a dual frequency 27/2 MHz capacitive radio frequency discharge

Tsai¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…26 As a consequence, the material and temperature of the reactor walls have a strong influence on the CF x concentrations in the gas phase 27,28 and thus the etch behavior. 29,30 This has lead recently to the development of industrial reactors that incorporate hot silicon reactor walls in order to increase polymerization.…”

Section: B the Role Of Cf X Radicalsmentioning

confidence: 99%

CF 2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization

Cunge

Booth

1999

Journal of Applied Physics

174

117

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Articles you may be interested inStudy of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etchThe study of CF and CF 2 radical production and loss mechanisms in capacitively-coupled 13.56 MHz CF 4 plasmas has been extended to CF 4 plasmas with an Si substrate, and to C 2 F 6 plasmas, conditions where the atomic fluorine concentration is lower and where more polymer deposition occurs on the reactor surfaces. Processes in the gas phase and at the reactor surfaces were investigated by time resolved axial concentration profiles obtained by laser induced fluorescence, combined with absolute calibration techniques. The results for CF were similar to those observed in the fluorine rich case, whereas the results for CF 2 were strikingly different and more complex. This paper focuses on the CF 2 radical, which, under these conditions is produced at all of the surfaces of the reactor, apparently via a long-lived surface precursor. The results can only be explained if large polymeric ions and/or neutrals are produced by polymerization in the gas phase. The gas-phase CF 2 concentration is high, causing the otherwise slow gas-phase concatenation reactions C X F Y (CF 2 ) n ϩCF 2 →C X F Y (CF 2 ) nϩ1 to occur. These processes produce high-mass neutrals ͑and ions͒ which are the real polymer precursors. The CF 2 radical therefore circulates in a closed cycle between the surface and the gas phase. The degree of polymerization is controlled by the fluorine atom concentration, which simultaneously controls the concentrations of CF 2 , of chain initiating species such as CF 3 and of dangling bonds on the growing oligomers. This model appears to apply to fluorocarbon discharges in general, and agrees well with other results presented in the literature.

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Electrode Temperature Effect in Narrow-Gap Reactive Ion Etching

Cited by 13 publications

References 4 publications

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

High selectivity plasma etching of silicon dioxide with a dual frequency 27/2 MHz capacitive radio frequency discharge

CF 2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization

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