Electrochromic devices for transmissive and reflective light control

Kamimori, Tadatoshi; Nagai, Junichi; Mizuhashi, Mamoru

doi:10.1016/0165-1633(87)90005-0

Cited by 78 publications

(20 citation statements)

References 6 publications

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“…The ion conductivity of the electrolyte, the electrical resistance of the transparent electrodes, and the device structure, such as the thickness of the EC layer and the device area, also affect the response times of EC devices (Viennet, Randin, & Raistrick, 1982;Kamimori, Nagai, & Mizuhashi, 1987). Although quantitative discussions of the response times are difficult, Figures 2 and 4 clearly show that there is a trade-off between the response time and the optical contrast ratio.…”

Section: Response Timementioning

confidence: 99%

Electrochromic Properties of Sputtered Iridium Oxide Thin Films with Various Film Thicknesses

Abe

Kim

Kawamura

et al. 2016

JMSR

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Iridium oxide is an anodic electrochromic material, which takes on a blue-black color through electrochemical oxidation and turns to transparent via reduction. Hydrated amorphous Ir oxide thin films with various thicknesses from 20 to 400 nm were prepared by reactive sputtering in a H 2 O atmosphere, and their transmittance spectra in both the bleached and colored states as well as their response times were examined in this study. The bleached and colored transmittances decreased with increasing film thickness according to Lambert's law, and the absorption coefficients in the bleached and colored states were estimated to be 3. , respectively, at a wavelength of 600 nm. The results point to almost all the Ir atoms being electrochemically active and contributing to the color change. A maximum transmittance change of 81% was obtained for the 400 nm-thick film. Further, there was a trade-off between the response speed and the transmittance change. The response speed slowed down with increasing the film thickness, while the coloring and bleaching response time for the thick films was several tens of seconds.

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Section: Response Timementioning

confidence: 99%

Electrochromic Properties of Sputtered Iridium Oxide Thin Films with Various Film Thicknesses

Abe

Kim

Kawamura

et al. 2016

JMSR

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“…[1][2][3] It exhibits high transparency (> 70%) in the visible region. Several deposition techniques have been employed for the deposition of polycrystalline indium oxide films, such as dc magnetron sputtering, 4 reactive ion plating, 5 sol-gel technique, 6 reactive evaporation, 7 metalorganic CVD, 8 ultrasonic spray CVD, 9 chemical spray pyrolysis, 10 and laser ablation.…”

Section: Introductionmentioning

confidence: 99%

PREPARATION AND CHARACTERIZATION OF In₂O₃ THIN FILMS FOR OPTOELECTRONIC APPLICATIONS

Ismail¹,

Abdulrazaq²,

Yahya

2005

Surf. Rev. Lett.

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Conductive transparent In 2 O 3 thin films with (222)-preferred orientation were prepared by rapid thermal oxidation (RTO) in static air of indium thin films at condition 200 • C/30 s. Detailed structural, electrical, and optical characteristics of the film are presented. The data are interpreted to give a direct bandgap of 3.6 eV and indirect bandgap of 2.5 eV. The grown In 2 O 3 films exhibited high figure of merit and sheet resistance as low as 20 Ω/sq. in the absence of any post-deposition annealing conditions. The mobility of these films was estimated to be 31 cm 2 · V −1 · s −1 . These results are compared with those of In 2 O 3 films prepared by other methods.

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“…[1][2][3][4] A cubic In 2 O 3 film with a band gap of approximately 3.2-3.5 eV can be used as transparent conductive oxide (TCO) materials in optoelectronic devices, including light-emitting diodes, photodetectors, thin-film solar cells, touch panels and flat panel displays [3,5,6]. Since the band gap is similar to that of GaN, a stoichiometric In 2 O 3 single crystal is a material of interest for ultraviolet and visible applications.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of indium oxide diodes prepared by reactive magnetron sputtering

Chen

Liu

2006

Solid-State Electronics

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Electrochromic devices for transmissive and reflective light control

Cited by 78 publications

References 6 publications

Electrochromic Properties of Sputtered Iridium Oxide Thin Films with Various Film Thicknesses

Electrochromic Properties of Sputtered Iridium Oxide Thin Films with Various Film Thicknesses

PREPARATION AND CHARACTERIZATION OF In₂O₃ THIN FILMS FOR OPTOELECTRONIC APPLICATIONS

Growth and characterization of indium oxide diodes prepared by reactive magnetron sputtering

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Electrochromic devices for transmissive and reflective light control

Cited by 78 publications

References 6 publications

Electrochromic Properties of Sputtered Iridium Oxide Thin Films with Various Film Thicknesses

Electrochromic Properties of Sputtered Iridium Oxide Thin Films with Various Film Thicknesses

PREPARATION AND CHARACTERIZATION OF In2O3 THIN FILMS FOR OPTOELECTRONIC APPLICATIONS

Growth and characterization of indium oxide diodes prepared by reactive magnetron sputtering

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PREPARATION AND CHARACTERIZATION OF In₂O₃ THIN FILMS FOR OPTOELECTRONIC APPLICATIONS