1984
DOI: 10.1016/s0022-0728(84)80283-1
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Electrochemistry of gallium in thiocyanate solutions of high ionic strength

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Cited by 6 publications
(2 citation statements)
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“…Iwasinska et al 48) measured the formal potential of Ga(III)/Ga(0) in a 4 M NaClO 4 solution with a pH of 2.0 at 25 o C. The potential value measured using gallium amalgam was −0.731 V vs. SCE. The authors observed that the increase in SCN − concentration caused a pronounced increase in cathodic current and suggested that the actual catalytic species responsible for reduction of Ga(III) might be adsorbed reduced hydrogen that was catalyzed by SCN − .…”
Section: Redox Behavior Of Gallium In Aqueous Solutionmentioning
confidence: 99%
“…Iwasinska et al 48) measured the formal potential of Ga(III)/Ga(0) in a 4 M NaClO 4 solution with a pH of 2.0 at 25 o C. The potential value measured using gallium amalgam was −0.731 V vs. SCE. The authors observed that the increase in SCN − concentration caused a pronounced increase in cathodic current and suggested that the actual catalytic species responsible for reduction of Ga(III) might be adsorbed reduced hydrogen that was catalyzed by SCN − .…”
Section: Redox Behavior Of Gallium In Aqueous Solutionmentioning
confidence: 99%
“…The bare GCE surface and normal mercury film thickness, generally used in analysis [14] by spiking Hg(II) solution, providing 2 · 10 À4 g/l concentration of Hg(II) ions in supporting electrolyte medium could not show any stripping peak of gallium oxidation indicating no deposition of gallium because reduction of gallium is a difficult electrode process [15] due to three-electron transfer, inert pair effect and high hydration enthalpy. A thick mercury film providing 1 · 10 À3 g/l concentration of Hg(II) ions in supporting electrolyte medium was found to be most suitable for analysis showing the highest stripping currents for gallium because of sufficient accumulation of Ga(III) in relatively large amount of mercury.…”
Section: Effect Of Mercury Film Thicknessmentioning
confidence: 99%