Electrochemically prepared oxides for resistive switching devices

Zaffora, Andrea; Macaluso, Roberto; Habazaki, H.; Valov, Ilia; Santamaria, Monica

doi:10.1016/j.electacta.2018.04.087

Cited by 29 publications

(25 citation statements)

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“…With this method, the composition, thickness, and structure can be controlled by choosing an appropriate substrate, electrolyte, and electrochemical conditions. Only a few studies have addressed this method of fabricating TiO 2 -based memristors (Miller et al, 2010 ; Yoo et al, 2013 ; Aglieri et al, 2018 ; Zaffora et al, 2018 ). Recently, promising advances in anodizing to form a compact topology of memristors (8–29 nm thickness and 4 μm 2 feature area) have been demonstrated (Aglieri et al, 2018 ).…”

Section: Synthesis and Fabricationmentioning

confidence: 99%

Memristive TiO2: Synthesis, Technologies, and Applications

et al. 2020

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Titanium dioxide (TiO 2 ) is one of the most widely used materials in resistive switching applications, including random-access memory, neuromorphic computing, biohybrid interfaces, and sensors. Most of these applications are still at an early stage of development and have technological challenges and a lack of fundamental comprehension. Furthermore, the functional memristive properties of TiO 2 thin films are heavily dependent on their processing methods, including the synthesis, fabrication, and post-fabrication treatment. Here, we outline and summarize the key milestone achievements, recent advances, and challenges related to the synthesis, technology, and applications of memristive TiO 2 . Following a brief introduction, we provide an overview of the major areas of application of TiO 2 -based memristive devices and discuss their synthesis, fabrication, and post-fabrication processing, as well as their functional properties.

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Section: Synthesis and Fabricationmentioning

confidence: 99%

Memristive TiO2: Synthesis, Technologies, and Applications

et al. 2020

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“…In contrast, the set and reset processes of the bipolar resistive type occur via the opposite polarity of the electric field. Among the many resistive switching materials, metal oxides are the most popular, owing to their good stability, reproducibility, and repeatability [4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Representative metal oxide-based resistive random access memory (RRAM) materials include TaO x , TiO 2 , Al 2 O 3 , and HfO 2 [4][5][6][7][8][9][10][11][12][13][14][15][16][17], with different configurations like anodic oxidation and physical vapor deposition (PVD), and chemical vapor deposition (CVD).…”

Section: Introductionmentioning

confidence: 99%

“…Among the many resistive switching materials, metal oxides are the most popular, owing to their good stability, reproducibility, and repeatability [4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Representative metal oxide-based resistive random access memory (RRAM) materials include TaO x , TiO 2 , Al 2 O 3 , and HfO 2 [4][5][6][7][8][9][10][11][12][13][14][15][16][17], with different configurations like anodic oxidation and physical vapor deposition (PVD), and chemical vapor deposition (CVD). It is worth noting that a bilayer stack of metal oxide exhibits relatively better resistive switching performance, such as endurance, retention, and variability performance, compared with a single-layer stack [18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

Ryu

Kim

2021

Metals

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This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

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“…For the active layers, many different material candidates have been investigated such as TiO 2 , HfO 2 , NbO 2 , TaO x , ZnO and Al 2 O 3 [11][12][13][14][15]. Also, for the formation of oxide active layers, deposition methods such as sputtering and anodizing have been utilized [16][17][18][19]. Among the candidate materials, TiO 2 -or TiO 2 /TiO 2-x -based memristors have been intensively studied since the physical realization and understanding of the memristors in 2008 [20].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Multi-Layer Stacking Sequence of TiOx Active Layers on the Resistive-Switching Characteristics of Memristor Devices

et al. 2020

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The oxygen vacancies in the TiOx active layer play the key role in determining the electrical characteristics of TiOx–based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiOx active layers on the resistive-switching characteristics of memristor devices. In particular, the stacking sequence of the multi-layer TiOx sub-layers, which have different oxygen contents, was varied. The optimal stacking sequence condition was confirmed by measuring the current–voltage characteristics, and also the retention test confirmed that the characteristics were maintained for more than 10,000 s. Finally, the simulation using the Modified National Institute of Standards and Technology handwriting recognition data set revealed that the multi-layer TiOx memristors showed a learning accuracy of 89.18%, demonstrating the practical utilization of the multi-layer TiOx memristors in artificial intelligence systems.

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Electrochemically prepared oxides for resistive switching devices

Cited by 29 publications

References 50 publications

Memristive TiO2: Synthesis, Technologies, and Applications

Memristive TiO2: Synthesis, Technologies, and Applications

Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

The Effect of Multi-Layer Stacking Sequence of TiOx Active Layers on the Resistive-Switching Characteristics of Memristor Devices

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