Electrochemical techniques and their applications for chemical mechanical planarization (CMP) of metal films

Roy, D.

doi:10.1016/b978-0-08-100165-3.00003-6

Cited by 8 publications

(18 citation statements)

References 106 publications

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“…39,40 Many of the electrochemical techniques traditionally used to characterize metal CMP slurries have also been employed to study PCMPC chemistries. 6 Like the case of CMP, defects caused by both general and bimetallic corrosions are factors of chief concern in PCMPC. 41,42 Therefore, most electrochemical studies of PCMPC also focus on assessing various corrosion effects.…”

Section: Trends and Current Statusmentioning

confidence: 99%

“…37 Hence, stationary WEs are most frequently used without abrasion in EIS studies of metal CMP. 6 Sometimes, polarization plots convoluted by activated faradaic reactions become unworkable for Tafel extrapolation to determine i corr . In such cases, linear polarization resistance (LPR) data are useful for estimating surface passivity.…”

Section: Trends and Current Statusmentioning

confidence: 99%

“…By having this electrochemical origin, metal CMP reactions are ideally suited for electroanalytical probing. 4,6 The measurement of material removal rates (MRRs), often coupled with microscopic inspection of defectivity, comprises a foremost component of fundamental experimental studies of metal CMP. The electrochemical techniques most frequently coupled with MRR measurements are those of potentiodynamic polarization (linear sweep voltammetry, LSV) and open circuit potential (OCP) transients.…”

Section: Scopes Of Electrochemical Studies In Metal Cmp Researchmentioning

confidence: 99%

“…In such cases, linear polarization resistance (LPR) data are useful for estimating surface passivity. 6,34 Current interruption is a standard method of measuring R s for CMP test cells, and can be used to determine active surface areas of tribo-electrochemically controlled metal samples. 38 In addition, electrochemical noise spectra generated by tribo-corrosion contain useful information about the associated mechano-chemical processes of CMP.…”

Section: Trends and Current Statusmentioning

confidence: 99%

“…3,4 At the same time, published reports indicate that, many of these issues, especially those related to the slurry consumables, 5 can be addressed to a large extent through electroanalytical examinations of slurry functions using scaled down models of actual CMP systems. 6 Recent studies performed in industrial facilities have also identified a critical need to further advance the fundamental understanding of metal CMP. 7,8 The present article provides a perspective on these fundamental research aspects of metal CMP that are in the core of most laboratory scale studies of these systems.…”

mentioning

confidence: 99%

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Perspective—Electrochemical Assessment of Slurry Formulations for Chemical Mechanical Planarization of Metals: Trends, Benefits and Challenges

Roy¹

2018

ECS J. Solid State Sci. Technol.

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With continued shrinkage of circuit dimensions, the technique of chemical mechanical planarization (CMP) has become progressively more intricate through the last decade. Since the chemical mechanism of metal CMP is governed by electrochemical effects, the complex task of CMP-slurry engineering can be economically assisted in the electroanalytical approach by using laboratory scale model systems. This article discusses how CMP has been impacted by device scaling, and examines the status of fundamental studies of metal CMP. The techniques suitable for studying model CMP systems are discussed, along with an assessment of the utilities and the practical limits of such experiments. Chemical mechanical planarization (CMP) is an essential processing step of integrated circuit (IC) fabrication. 1,2 CMP of the metal components of logic devices constitute a major aspect of this technique and, like other areas of IC manufacturing, metal CMP has become quite complex while addressing the emerging demands of technology through the last decade. 3 The new challenges of metal CMP originate from both the scaling and the novel material aspects of these systems. 3,4 At the same time, published reports indicate that, many of these issues, especially those related to the slurry consumables, 5 can be addressed to a large extent through electroanalytical examinations of slurry functions using scaled down models of actual CMP systems. 6 Recent studies performed in industrial facilities have also identified a critical need to further advance the fundamental understanding of metal CMP. 7,8 The present article provides a perspective on these fundamental research aspects of metal CMP that are in the core of most laboratory scale studies of these systems. Device Scaling and CMP ConsiderationsThe International Technology Roadmap for Semiconductors (ITRS) specified the earlier technology nodes in terms of the DRAM half-pitch (hp), or the microprocessor's level-1 metal hp of a device. 9 Basically until the 65 nm node, the shrinkage of feature-size has continued in line with Dennard scaling, by a factor (S) of 1/ √ 2, to accommodate doubling of transistors per unit chip area (scaling as S 2 = 1/2) every two years in relation to Moore's law. 10 Increased leakage currents in the subsequent feature reductions have eventually shifted this technology trend, with the emergence of advanced multicore systems. 11 While the scaling factor of 1/ √ 2 has been largely maintained in the post-Dennard period, the newer logic devices have evolved in a more complex manner compared to their earlier counterparts. The middle-of-line (MOL) metallization scheme has emerged from the need to reduce the parasitic effects of active wiring that extends over 4 km cm −2 for >13 metal layers. 9 Novel diffusion barriers and ultra-low-k (ULK) dielectrics, Fin field effect transistors (Fin-FETs), high-k gate dielectrics, and exploratory designs/materials for local interconnects have been steadily incorporated in new device architectures in keeping with the advents of scaling sch...

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Section: Trends and Current Statusmentioning

confidence: 99%

Section: Trends and Current Statusmentioning

confidence: 99%

Section: Scopes Of Electrochemical Studies In Metal Cmp Researchmentioning

confidence: 99%

Section: Trends and Current Statusmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Perspective—Electrochemical Assessment of Slurry Formulations for Chemical Mechanical Planarization of Metals: Trends, Benefits and Challenges

Roy¹

2018

ECS J. Solid State Sci. Technol.

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Electrophoretic Deposition of Graphene Oxide Nanosheets on Copper Pipe for Corrosion Protection

et al. 2019

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Editors' Choice—In Situ Electrochemical Evaluation of Post-CMP Cleaning Reactions for Cobalt and Copper Films under Brushing Conditions

Johnson¹,

Roy²

2019

ECS J. Solid State Sci. Technol.

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The sub-10 nm technology node has introduced significant chemical complexities in the associated processing steps of chemical mechanical planarization (CMP), and this has correspondingly convoluted the post-CMP cleaning (PCMPC) protocols. Focusing on selected cleaning chemistries, the present work demonstrates an in-situ tribo-electrochemical approach to developing fundamental knowledge of the PCMPC mechanisms for such systems. As model samples, the experiments use cobalt and copper thin films, deposited on wafer coupons, and treated in an alkaline CMP solution of acetate, H2O2 and benzotriazole. These samples are subsequently studied in an alkaline PCMPC solution of oxalic acid, designed for cleaning both Co and Cu. The surface cleaning characteristics of the metals are assessed by tribo-electrochemical measurements in the presence of mechanical brushing with a commercial rotary brush for PCMPC. The tribo-electrochemical parameters of the PCMPC-active brushed wafer regions are extracted from the recorded data to determine the cleaning mechanisms. Open circuit potential and voltammetric measurements indicate that oxalate ions serve to remove the CMP residues, Co(OH)2 and Cu-oxides from Co and Cu surfaces, respectively, in the forms of oxalate complexes. The residue removal efficiencies, measured by ex-situ impedance spectroscopy, are found in the 85–89% range for both Co and C

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Electrochemical techniques and their applications for chemical mechanical planarization (CMP) of metal films

Cited by 8 publications

References 106 publications

Perspective—Electrochemical Assessment of Slurry Formulations for Chemical Mechanical Planarization of Metals: Trends, Benefits and Challenges

Perspective—Electrochemical Assessment of Slurry Formulations for Chemical Mechanical Planarization of Metals: Trends, Benefits and Challenges

Electrophoretic Deposition of Graphene Oxide Nanosheets on Copper Pipe for Corrosion Protection

Editors' Choice—In Situ Electrochemical Evaluation of Post-CMP Cleaning Reactions for Cobalt and Copper Films under Brushing Conditions

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