Electrochemical Synthesis on Nanoparticle Chains to Couple Semiconducting Rods: Coulomb Blockade Modulation Using Photoexcitation

Abstract

Hybrid nanostructures are made by coupling a room temperature coulomb blockade device with photoexcitable nano-rods. Direct electrochemical synthesis on nanoparticle chain arrays leads to the formation of semiconducting rods that are in direct contact with the nanoparticles and also spatial confined by them. This direct interfacing leads to mutual intermodulation between the two systems.

Wearable Devices Using Nanoparticle Chains as Universal Building Blocks with Simple Filtration‐Based Fabrication and Quantum Sensing

“…Due to the divalent nature of the Ca 2+ ion and its interaction with the citrate ions, the nanoparticles self‐assemble into microns long branched chain networks. [ 25,26 ] Transmission electron microscopy (TEM) images of Figure 1c, show this morphology. At relatively lower magnification of Figure 1c we see that the chains are micron scale in size and in the high resolution image, the inset, we observe that the adjacent nanoparticles are separated by 1–2 nm gap.…”

“…The Au chip used is similar to one mentioned in previous work. [ 26 ] Later, the Au chip was taken out from solution and gently washed by Millipore water to remove the salt.…”

“…UV–vis absorption spectra (in Figure S1, Supporting Information) shows that as a result of the assembly the surface plasmon resonance of Au nanoparticles shifts from ≈520 to 610 nm due to coupling between the nanoparticles in the chains. [ 26 ] The zeta potential of the assembled chains is approximately −30 mV and light scattering results show that the hydrodynamic radius increase from ≈12 to ≈250 nm following the assembly (results in Figure S2, Supporting Information). The assembled chains due to their micron scale size can be filtered out using a polymer membrane filter of pore size (≈200 nm).…”

Direct Transfer Manufacturing of Flexible Silicon Carbide Nanowire-Network Prototype Device

“…The corresponding rise and decay times are 1.95 s and 1.65 s at a bias voltage of 1 V; and 1.69 s and 2.24 s for 0 V. The speed of our device is faster than ZnO nanoparticle-nanorod (NP-NR) network device with response time of 16 s at 2 V [28], ZnO nanoparticle-nanoparticle (NP-NP) network ink on a paper substrate with 3-6 s [29], a single WO3 NW on a paper substrate with 3-20 s at 10 V [11], a single ZnS NW on a rigid Si/SiO2 substrate with 60 s at 10 V [10], and Zn2GeO4 NW-NW junction on rigid Si/SiO2 substrate with 2.5-4 s at 2 V [30]. Furthermore, the responsivity of the UVPD was calculated by, R = J/ (p x A), where p is the power intensity of the UV lamp and A is the light illuminated active area of the device [31,32]. The responsivity values are found as 5.92 mA/W, 8.16 mA/W, and 9.58 mA/W for 0 V, 0.5 V, and 1 V at 254 nm UV light, respectively.…”