Electrochemical metal deposition on silicon

Ogata, Yukio H.; Kobayashi, Katsutoshi; Motoyama, Munekazu

doi:10.1016/j.cossms.2007.02.001

Cited by 99 publications

(78 citation statements)

References 71 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Introducing a diffusion limitation into the electrochemical system is a standard method to achieve a high control over the reaction kinetics of the occurring electrochemical reactions. [52][53][54] In the present electrolyte this diffusion limitation is achieved by adding PEG 3350 to it. Exemplarily, reducing only the KCl electrolyte concentration to 0.05 mol/l results in a drastically lower pore density and the pronounced growth of needle-like Zn-oxide based structures on the pore walls, while a KCl concentration increase to 0.15 mol/l leads to thinner and smoother pore walls with hardly any pore wall coverage of nanometer-sized plate-like structures.…”

Section: Journal Of Thementioning

confidence: 99%

Self-Organized Growth of Crystallographic Macropores in Multicrystalline Zn by Nanoscale Sculpturing

Gerngroß

Baytekin-Gerngross

Carstensen

et al. 2018

J. Electrochem. Soc.

View full text Add to dashboard Cite

The self-organized formation of crystallographically oriented macropores in multicrystalline Zn is presented in the present paper. These pores are obtained by pulsed-potential electrochemical etching in an aqueous KCl electrolyte. They exhibit the typical characteristics of crystallographically-oriented pores like growth along certain crystallographic directions, formation of pore domains, branching of pores, and intersections of pores, as observed for e.g. III-V semiconductors such as InP. The pore walls of the pores in Zn are entirely composed of metallic Zn unlike the amorphous metal oxide ones observed in other metals like Al (AAO) or Ti (TiO 2 ). The main pore growth direction in Zn is along <0001>. The branching of side pores occurs along [1210] and [1210] in 90 • angles from the root pore forming a pore geometry reminding remotely on a monkey puzzle tree. Because of their crystallographic nature of the pores they grow under various angles into the multicrystalline Zn surface depending on the underlying crystal orientation. Like this they form a perfectly suitable structure for mechanical interlocking with polymers. When filled with polymer, the root pores together with the branched side pores act as ideal hooks anchoring the polymer in Zn solving the well-known problem of poor adhesion of polymers and paint on Zn surfaces.

show abstract

Section: Journal Of Thementioning

confidence: 99%

Self-Organized Growth of Crystallographic Macropores in Multicrystalline Zn by Nanoscale Sculpturing

Gerngroß

Baytekin-Gerngross

Carstensen

et al. 2018

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Deposition occurs by overcoming this barrier and transferring charge carriers (either holes or electrons) into an acceptor state of the solution (the redox potential of a metal/electrolyte solution) [21]. Since the silicon is now the cathode, there are two possible transfer possibilities: it will either accept holes into its valence band or transfer electrons from its conduction band; either will result in the capturing of a metal ion [22].…”

Section: Electrochemistry At the Interfacementioning

confidence: 99%

“…From an electrical perspective, deposition is the opposite of etching. Removing material required anodically biasing the silicon, but adding material requires treating silicon as the cathodic terminal [21]. Most catalytic layers are placed using a wet electrochemical process.…”

Section: Chapter 3: Addition Of Catalystmentioning

confidence: 99%

“…The majority of holes are attracted to a strong electric field at the pore tips. In (a) some holes penetrate into walls but in (b), the Space Charge Region in the walls prevents this [14]…………………………………………………………………... [21].. 29…”

mentioning

confidence: 99%

“…(b) in psilicon, there is no forward bias but illumination will generate electrons which will jump to conduction band for transfer [21]…………………………… 30…”

mentioning

confidence: 99%

See 2 more Smart Citations

Fabrication and Characterization of a Palladium/Porous Silicon Layer

Lui¹

View full text Add to dashboard Cite

Fabrication and Characterization of a Palladium/ Porous Silicon Layer Nicholas LuiA scientific paper can be considered a journey into the logic and mind of the scientist who performed the experiment. This paper, a little unconventional, is written as a reflection of how the author organizes and thinks through his topic. In the telling of it this way, he hopes the journey is as compelling for the reader as it was for him.When porous silicon is plated with a catalytic metal, the two materials can act together as a single entity whose electrical properties are sensitive to its environment -the sensing component of an electrochemical gas sensor. Etching pores into silicon is an electrochemical process; and which type of doped silicon used is one of its key parameters. For nearly all reported porous silicon gas sensors, the silicon has been of the p-doped variety -because pdoped porous etching is better understood and the layers that result from it are more predictable -despite n-doped silicon having potentially significant benefits in ease of fabrication and being more conducive to plating by a catalyst. This experiment is an attempt at creating a palladium plated n-doped porous silicon layer, and an examination into what differentiates this fabrication process and the layers that result from the traditional p-doped type.The porous layers to be plated are to be the same and would ideally have properties that are a close approximation to what a functional gas sensor would require. This experiment defined a process that fabricated this "ideal" layer out of N-type, <100>, double polished silicon wafers with a resistance of 20 Ω cm. The wafers were subjected to the anodic etching method with an HF/ethanol mixture as the electrolyte; and only two (of among many) fabrication parameters were varied: HF concentration of the electrolyte and total etching time. We find that a concentration of 12% HF (by volume) and an etching time of 6 hours result in layers most appropriate to carry into plating. The anodization current density is 15 mA cm -2. Deposition of the catalyst, palladium, is done using the electroless method by immersing the porous layer in a .001M PdCl 2 aqueous bath.Characterization of this Pd/Porous Silicon layer was done by measuring resistivity by four point probe and imaging through Scanning Electron Microscopy. It was found that layers of a v maximum average of 63 ± 6% porosity were created using our fabrication method. There is evidence of palladium deposition, but it is spotty and irregular and is of no improvement despite the n-doping wafer makeup. Resistivity in well-plated regions was measured to be 7-10 Ωcm, while resistivity in regions not well-plated was measured to be 70-140 Ω cm. This is comparable to previous literature values, indicating n-silicon porous silicon can be fabricated and still have potential as a catalytic layer, should metal deposition methods improve.Keywords: Porous Silicon, Electroless Plating, Anodic Etching. vi Chapter 1: IntroductionAt its most general, a porous mate...

show abstract

Chemistry of Porous Silicon

2011

Porous Silicon in Practice

View full text Add to dashboard Cite

Electrochemical metal deposition on silicon

Cited by 99 publications

References 71 publications

Self-Organized Growth of Crystallographic Macropores in Multicrystalline Zn by Nanoscale Sculpturing

Self-Organized Growth of Crystallographic Macropores in Multicrystalline Zn by Nanoscale Sculpturing

Fabrication and Characterization of a Palladium/Porous Silicon Layer

Chemistry of Porous Silicon

Contact Info

Product

Resources

About