2014
DOI: 10.4028/www.scientific.net/amr.953-954.1282
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Electrochemical Impedance Characterization of Porous Aluminum Oxide after Different Stages of Two-Step Anodization

Abstract: In this paper, porous anodic aluminum oxide (AAO) membrane was prepared with highly pure aluminum film in 0.3M oxalic acid under dc voltage of 40V at about 8°C by two-step anodization. The morphology of the specimens processed in different stages of two-step anodization was observed with a scanning electron microscope (SEM). The electrochemical behavior of the anodized aluminum after different stages of two-step anodization was studied by electrochemical impedance spectroscopy (EIS). Different equivalent circu… Show more

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“…Right after the cathodic polarization, the EIS of the broken-in thin film was taken (Figure d). In the EIS experiment, because the electrode was coated with the neutral semiconducting polymer thin film, the counterions needed to penetrate through the polymer thin film to reach the interfaces where the charge transfer occurs. , The EIS results can hence be fitted by the R s ( Q film R film )­( Q dl R ct ), where R s is the solution resistance, Q film and R film are the capacitance and resistance of the thin film, and Q dl and R ct are double-layer capacitance and charge transfer resistance at the ECP-black film/ITO interfaces. The fitted results were summarized in the Supporting Information (Table S1).…”
Section: Resultsmentioning
confidence: 99%
“…Right after the cathodic polarization, the EIS of the broken-in thin film was taken (Figure d). In the EIS experiment, because the electrode was coated with the neutral semiconducting polymer thin film, the counterions needed to penetrate through the polymer thin film to reach the interfaces where the charge transfer occurs. , The EIS results can hence be fitted by the R s ( Q film R film )­( Q dl R ct ), where R s is the solution resistance, Q film and R film are the capacitance and resistance of the thin film, and Q dl and R ct are double-layer capacitance and charge transfer resistance at the ECP-black film/ITO interfaces. The fitted results were summarized in the Supporting Information (Table S1).…”
Section: Resultsmentioning
confidence: 99%
“…A quantitative treatment of the EIS data is afforded by fitting the datasets to a classic equivalent circuit model shown in Figure 9c [25][26][27] The physical-chemical interpretation of the electrical element centers around the crucial double layer capacity C dl in parallel to the charge transfer resistance R ct to Faradaic electron transfer across the interface. A Warburg element W is placed in series with it to model mass and charge transport along the pore.…”
Section: Electrochemical Characterizationmentioning
confidence: 99%