Electrochemical etching process to tune the diameter of arrayed deep pores by controlling carrier collection at a semiconductor–electrolyte interface

Fabrication of Ordered Silicon Wire Structures via Macropores without Pore Wall by Electrochemical Etching

“…When the silicon is immersed into an electrolyte, a spacecharge region (SCR) is present in the semiconductor electrode and serves as a Schottky barrier. 25,26 The width of the SCR depends on the built-in potential V bi , on the p-type doping density, on the applied bias V appl , and on the interface geometry and becomes thin at the sharp edges (i.e. etch pit or pore tip) comparing with the other flat areas.…”

“…etch pit or pore tip) comparing with the other flat areas. 25,26 However, the barrier height (E b ) is independent of geometry and is estimated from the following equation 1: 25 E b = e(V bi − V appl ) − 2kT [ 1 ] where V bi is the built-in potential, V appl is the applied bias, k is the Boltzmann constant, e is the elementary charge, and T is the temperature. Thus, we investigated the rectifying characteristics of the electrolyte/silicon wire (length 13 μm)/p-silicon substrate/Al structure used normally in our experiment, resulting in exhibiting a typical rectifying behavior as shown in Fig.…”

Electrochemical Processes for the Fabrication of Functional Micro–nano Structures and Devices: Mechanistic Understanding and Process Development

“…14(c). In addition, by decreasing the supply of holes to the reaction sites, the diameter of the pores could be tuned, 45 as is shown in Fig. 14(d).…”

Formation of Submicrometer Pore Arrays by Electrochemical Etching of Silicon and Nanoimprint Lithography

“…6 This technique has, however, mostly been studied for the fabrication of pore arrays in the micrometer range. [7][8][9] The current development of silicon nanodevices sometimes requires integrating pore arrays with higher densities. For instance, 500 nm pore arrays are necessary to confine light within the wavelength ranges applicable to telecommunications.…”