2017
DOI: 10.1039/c7ta05574a
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Electrochemical etching of Ti2AlC to Ti2CTx (MXene) in low-concentration hydrochloric acid solution

Abstract: In this study, we successfully demonstrate the electrochemical etching of Al from porous Ti2AlC electrodes in dilute hydrochloric acid to form a layer of Ti2CTx MXene on Ti2AlC.

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Cited by 473 publications
(307 citation statements)
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“…Electrochemical etching presents promising results in comparison to fluoride‐based etching (Table ). In 2017, Sun et al used a three‐electrode cell to conduct the etching process . A homemade porous Ti 2 AlC, dilute HCl solution (2 m ) and a Pt foil serve as working electrode, electrolyte and counterelectrode, respectively.…”
Section: Synthesis Of 2d Materials With Designed Functionalitymentioning
confidence: 99%
“…Electrochemical etching presents promising results in comparison to fluoride‐based etching (Table ). In 2017, Sun et al used a three‐electrode cell to conduct the etching process . A homemade porous Ti 2 AlC, dilute HCl solution (2 m ) and a Pt foil serve as working electrode, electrolyte and counterelectrode, respectively.…”
Section: Synthesis Of 2d Materials With Designed Functionalitymentioning
confidence: 99%
“…Nevertheless, bare MXenes oxidise very quickly, so realistically the best capacities are found in O‐ (which can adsorb multiple layers of Li), followed by HO‐ and F‐terminated MXenes (with the exception of special cases where normal functional groups have been substituted by another element or molecule such as Si) . This hierarchy of capacities is quite convenient for those who perform fluorine‐free MXene syntheses, as OH terminations can be removed by lithiation (which occurs during initial charge of a Li‐ion battery) or annealing, and potentially be substituted by O terminations.…”
Section: Li‐ion Batteriesmentioning
confidence: 99%
“…The addition of fluoride salts, such as LiF and NaF, enables the selective etching of phase A in MAX under mild conditions by hydrochloric acid or sulfuric acid . Sun et al used low‐concentration hydrochloric acid to etch Al atom in Ti 2 AlC without adding fluoride . In addition to etching with HF or a mixture of HCl and a fluoride salt, in view of the amphoteric nature of Al, Al can also be etched by alkali.…”
Section: Classification Of 2d Crystalsmentioning
confidence: 99%