Electrochemical characterization of PbS quantum dots capped with oleic acid and PbS thin films — a comparative study

Cuharuc, Anatolii S.; Kulyuk, L.; Lascova, R.; Mitioglu, Anatolie; Дикусар, А. И.

doi:10.3103/s1068375512030040

Cited by 13 publications

(10 citation statements)

References 55 publications

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“…Low cost and solution processed colloidal quantum dots (CQDs) have enabled photodetectors that benefit from infrared sensitivity, high light absorption, wavelength tenability . Exhibiting tunable bandgap from 0.5 to 1.7 eV matching PQDs' energy level and high air stability with organic ligands, PbS colloidal quantum dots have a significant absorption capacity for NIR and short‐wavelength light, which PQDs can't be access to. The reported photoconductive detectors based on hybrid PbS QDs/graphene have achieved a responsivity up to 10 7 A W −1 attributed to the photogating effect through capacitive coupling .…”

Section: Comparison In Device Performance Of Cspbbr3/pbs Hybrid Feptsmentioning

confidence: 99%

High Performances for Solution‐Pocessed 0D–0D Heterojunction Phototransistors

Zhang

Song

et al. 2017

Advanced Optical Materials

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All‐inorganic cesium lead halide perovskite nanocrystals have emerged as attractive optoelectronic nanomaterials due to their stabilities and highly efficient photoluminescence. High‐sensitivity photodetection covering a large spectral range from ultraviolet to near‐infrared is dominated by phototransistors. To overcome existing limitations in sensitivity and cost of state‐of‐the‐art systems, new‐style device structures and composite material systems are needed with low‐cost fabrication and high performance. Here, field‐effect phototransistors (FEpTs) based on CsPbBr3–PbS colloidal quantum dot heterostructure dominate to obtain a wide response spectral range and high performance. The large spectral detection spectrum is from 400 to 1500 nm similar to PbS quantum dots' response. It is worth mentioning that the device shows responsivity up to 4.5 × 105 A W−1, which is three orders of magnitude higher than the counterpart of individual material‐based devices. Furthermore, other high performance of hybrid CsPbBr3–PbS FEpTs including a short photoresponse time (less than 10 ms) is ascribed to the assistance of heterojunction on the transfer of photoexcitons. The solution‐based fabrication process and excellent device performance strongly underscore CsPbBr3–PbS quantum dot as a promising material for future photoelectronic applications.

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Section: Comparison In Device Performance Of Cspbbr3/pbs Hybrid Feptsmentioning

confidence: 99%

High Performances for Solution‐Pocessed 0D–0D Heterojunction Phototransistors

Zhang

Song

et al. 2017

Advanced Optical Materials

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“…However, these capping ligands ultimately determine the interparticle spacing between the QDs themselves and energetic barrier to charge transport at the QD-2D interface [26,27,29]. In general, capping ligands such as trioctylphosphine (TOP) and oleic acid (OA) are typically employed in the synthesis to reduce defect density, stabilize the QDs in solution by giving them a hydrophilic or hydrophobic surface, and prevent particle aggregation and precipitation [30,31]. However, these long ligands create strong insulating barriers between QDs, reduce the coupling and hopping rate, and impede efficient carrier transport between the QD and the 2D material [26,27,29].…”

Section: Fabrication Technologiesmentioning

confidence: 99%

High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

et al. 2017

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Abstract:Having been inspired by the tremendous progress in material nanoscience and device nanoengineering, hybrid phototransistors combine solution processed colloidal semiconductor quantum dots (QDs) with graphene or two-dimensional (2D) semiconductor materials. Novel detectors demonstrate ultrahigh photoconductive gain, high and selective photoresponse, low noise, and very high responsivity in visible-and near-infrared ranges. The outstanding performance of phototransistors is primarily due to the strong, selective, and size tunable absorption of QDs and fast charge transfer in 2D high mobility conductors. However, the relatively small mobility of QD nanomaterials was a technological barrier, which limited the operating rate of devices. Very recent innovations in detector design and significant progress in QD ligand engineering provide effective tools for further qualitative improvements. This article reviews the recent progress in material science, nanophysics, and device engineering related to hybrid phototransistors. Detectors based on various QD nanomaterials and several 2D conductors are compared, and advantages and disadvantages of various nanomaterials for applications in hybrid phototransistors are identified. We also benchmark the experimental characteristics with model results that establish interrelations and tradeoffs between detector characteristics, such as responsivity, dark and noise currents, the photocarrier lifetime, response, and noise bandwidths. We have shown that the most recent phototransistors demonstrate performance limited by the fundamental generation recombination noise in high gain devices. Interrelation between the dynamic range of the detector and the detector sensitivity is discussed. The review is concluded with a brief discussion of the remaining challenges and possible significant improvements in the performance of hybrid phototransistors.

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“…According to the reviewed refs (42−44) and the analyses of the obtained voltammograms, it is concluded that the two observed defined redox processes can be reliably related to the PbS nanoparticles. These anodic and cathodic redox processes are separated by a planar region where no voltammetric features can be observed.…”

Section: Resultsmentioning

confidence: 94%

“…The redox behavior of the dispersed PbS nanoparticles in the electrolyte to the applied voltage stimulus shows a similarity to previous reports. 42−44 The observed anodic process can be associated with the sulfur oxidation (anodic dissolution, eq 1), whereas the reduction process can be associated with the lead reduction (eq 2). On the other hand, the current wave measured at −0.5 and −0.7 V, obtained after the nanoparticle reduction and clearly observed for the PbS-OA system (see Figure 4), can be related to the metallic lead deposition on the electrode surface, which is reoxidized when the potential scanning reaches positive potentials (eq 2).…”

Section: Resultsmentioning

confidence: 99%

Influence of the Capping Ligand on the Band Gap and Electronic Levels of PbS Nanoparticles through Surface Atomistic Arrangement Determination

et al. 2018

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Lead sulfide (PbS) nanoparticles were synthesized by chemical methods with different sizes and different capping ligands (oleic acid, myristic acid, and hexanoic acid), avoiding ligand exchange procedures, to study the effect of characteristics of the capping ligands on their energy levels and band gap values. Experimental results (UV–vis–NIR, Fourier transform infrared, and Raman spectroscopies, cyclic voltammetry, transmission electron microscopy, and electron energy loss spectroscopy) showed a marked influence of the capping ligand nature on the electro-optical properties of PbS nanoparticles with a very similar size. Differences were observed in the atomistic arrangement on the nanoparticle surface and phonon vibrations with the different capping ligands. These observations suggest that the electro-optical properties of PbS nanoparticles are not only determined by their size, through quantum confinement effects, but also strongly affected by the atomistic arrangement on the nanoparticle surface, which is determined by the capping ligand nature.

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Electrochemical characterization of PbS quantum dots capped with oleic acid and PbS thin films — a comparative study

Cited by 13 publications

References 55 publications

High Performances for Solution‐Pocessed 0D–0D Heterojunction Phototransistors

High Performances for Solution‐Pocessed 0D–0D Heterojunction Phototransistors

High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

Influence of the Capping Ligand on the Band Gap and Electronic Levels of PbS Nanoparticles through Surface Atomistic Arrangement Determination

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