Electrochemical aspects of depositing Sb2Te3 compound on Au substrate by ECALE

Yang, Junyou; Zhu, Wen; Gao, Xianhui; Fan, Xiaoliang; Bao, Siqian; Duan, Xingkai

doi:10.1016/j.electacta.2006.09.045

Cited by 29 publications

(25 citation statements)

References 23 publications

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“…The reduction peak C1 at the potential of 0.41 V corresponds to the UPD of Bi on Pt, and the bulk depositing potential is −0.13 V, signed as C2; as the scanning turned around, the oxidative stripping peaks of the deposit appeared, labeled as peaks A1 and A1 for the UPD layer, and A2 for the bulk deposit. The details of the voltammetric behaviors of Bi deposition on Pt electrode had been described in previous work by this group [22,28], and will not be elaborated further. − for 60 s at Se UPD potential.…”

Section: Bismuth Electrochemical Behavior On Ptmentioning

confidence: 99%

“…IIIA-VA compound GaAs [17], InAs [18] as well as IIIA-VIA compound In 2 Se 3 [19], IVA-VIA compound PbSe [11], PbTe [12], VA-VIA [20,22] compounds and superlattices of InAs/InSb [23], CdS/CdSe [24], PbTe/PbSe [25], and Bi 2 Te 3 /Sb 2 Te 3 [26] have also been prepared by ECALE. However, to our knowledge, the deposition of Bi 2 Se 3 compound, as an important thermoelectric material, has not been investigated with ECALE yet.…”

Section: Introductionmentioning

confidence: 99%

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Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Xiao

Yang

Zhu

et al. 2009

Electrochimica Acta

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Section: Bismuth Electrochemical Behavior On Ptmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Xiao

Yang

Zhu

et al. 2009

Electrochimica Acta

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“…164 -166 Antimony telluride fi lms have been grown from antimony(III) and tellurium(IV) oxides. 167 Antimony telluride fi lms were stoichimetric and consisted of nanoscale particles of the size 100 nm. The fi lms had a good crystallinity.…”

Section: Materials Grown By Ecalementioning

confidence: 99%

“…The fi lms had a good crystallinity. 167 Indium selenide fi lms were grown from indium sulphate and selenium oxide precursors. 168 The fi lms consisted of large particles, 70 to 200 nm in diameter.…”

Section: Materials Grown By Ecalementioning

confidence: 99%

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

Lindroos

Leskelä

2008

Solution Processing of Inorganic Materials

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“…Lowdimensional Bi 2 Te 3 -based materials, which show special quantum confinement effects and electrical transport properties [4], have proved to be an effective route for improving thermoelectric properties [5]. Many deposition methods have been used to prepare Bi 2 Te 3 -based thin films; these include co-evaporation [6,7], metal organic chemical vapor deposition [8], pulsed laser deposition [9,10], electrochemical deposition [11,12], electrochemical atomic layer epitaxy [13,14], molecular beam epitaxy [15], co-sputtering [16], closed space vapor transport techniques [17], hotwall-epitaxy techniques, and electron-beam evaporation [18]. In this work, because of the simple configuration of the deposition system, we use a flash evaporation method [19][20][21][22] for the fabrication of Bi 2 Te 3 -based alloy thin films.…”

mentioning

confidence: 99%

Preparation and thermoelectric properties of p-type Bi0.52Sb1.48Te3 + 3% Te thin films

et al. 2012

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Thin films of p-type Bi 0.52 Sb 1.48 Te 3 + 3% Te were deposited on glass substrates by flash evaporation. X-ray diffraction and field-emission scanning electron microscopy were performed to characterize the thin films, and the effects of preparation and annealing parameters on the thermoelectric properties were investigated. It was shown that the power factors of the films increased with increasing deposition temperature. Annealing the as-deposited films improved the power factors when the annealing time was less than 90 min and the annealing temperature was lower than 250°C. A maximum power factor of 10.66 μW cm −1 K −2 was obtained when the film was deposited at 200°C and annealed at 250°C for 60 min. Because of their potential applications in microelectronics and other high-technology fields, Bi 2 Te 3 -based thermoelectric materials have attracted much attention in recent years [1][2][3]. The performances of thermoelectric materials depend on the thermoelectric figure-of-merit, ZT, which is defined as ZT = S 2 Tσ/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, and T is the absolute temperature. The product S 2 is defined as the thermoelectric power factor. The power factor should be maximized and the thermal conductivity should be reduced in order to achieve high-efficiency thermoelectric materials. It is apparent that improvements in the thermoelectric figure of merit are possible by increasing S and σ, and by decreasing the thermal conductivity. [18]. In this work, because of the simple configuration of the deposition system, we use a flash evaporation method [19][20][21][22] for the fabrication of Bi 2 Te 3 -based alloy thin films. Annealing can strongly influence the electrical transport behavior of semiconductor films. It has been reported that annealing has a positive effect on the thermoelectric properties of Bi 2 Te 3 -based materials [23,24]. However, the thermoelectric properties of Bi 2 Te 3 -based materials depend not only on the carrier concentration but also on the grain size and grain orientation, and these will also be altered during the annealing process. Little systematic research has been done on the effects of preparation and annealing conditions on the thermoelectric properties of Bi 2 Te 3 -based thin films. In this study, we prepare p-type Bi 0.52 Sb 1.48 Te 3 + 3% Te thin

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Electrochemical aspects of depositing Sb2Te3 compound on Au substrate by ECALE

Cited by 29 publications

References 23 publications

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

Preparation and thermoelectric properties of p-type Bi0.52Sb1.48Te3 + 3% Te thin films

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