Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects

Heller, Eric R.; Crespo, A.

doi:10.1016/j.microrel.2007.01.090

Cited by 98 publications

(47 citation statements)

References 22 publications

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“…A more precise device thermal modelling approach is to combine the Joule heating distribution derived from a 2D drift diffusion simulation with a 3D FE transistor model [4,63]. Figure 9 illustrates the simulated Joule heat distribution in the channel of a GaN HEMT operated over a range of drain bias voltages.…”

Section: A Temperature Measurement For Accelerated Lifetime Testingmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: A Temperature Measurement For Accelerated Lifetime Testingmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…Table 3 Finally, an analysis of the sensitivity of Conditions 1, 2, and 3 to thermal resistance (R th ) changes in the thermal model is investigated. The accuracy of any thermal resistance estimate for these devices is subject to significant error [6,7,23], and it is an underappreciated fact that the sensitivity of conclusions drawn in an accelerated life test to the thermal resistance assumed should be considered [7]. The analysis computes new T ch estimates with [(T ch´Tbp )ˆ(˘20%)] + T bp for a˘20% change in thermal resistance.…”

Section: -H Testmentioning

confidence: 99%

“…The estimation of the temperature at the site of degradation/failure is critical. Direct measurement and characterization of the actual temperature in the area of interest was impractical because the area of interest is sub-micron in size and is located, within the structure of the device, under a metal stack that cannot be removed without affecting device operation and/or the intended temperature to be measured [6,7]. Therefore, we relied on the commonly accepted approach of using simulation data and indirect measurements versus directly collecting measured data.…”

Section: Introductionmentioning

confidence: 99%

“…Other important sources of error in thermal estimation are that the degrading region of a power device is not at a single uniform temperature during operation [6] and that the thermal resistance estimates usually only consider the total power dissipated within the device. These thermal resistance estimates do not account for different bias conditions causing different temperature distributions within the device [7]. Finally, the value of the thermal resistance between the GaN buffer and the substrate varies greatly from vendor to vendor due to differences in device fabrication and packaging [8].…”

Section: Introductionmentioning

confidence: 99%

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Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

et al. 2016

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Abstract:The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation) is insufficient to assess lifetime at operating conditions.

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“…Self-heating is one of the critical factors that reduces device lifetime and reliability as channel temperature can reach several hundred degrees above ambient base temperature. Severe self-heating effect may deteriorate the gate electrode and can burn metal wires connecting the chip to the package, and hence result in device failures and reliability issues [11][12].The study of reliability of GaN HEMTs and the knowledge of heat dissipation in these transistors is crucial to develop a stable technology.…”

mentioning

confidence: 99%

Study of self-heating effects in GaN HEMTs

Nuttinck

Gebara²,

Laskar³

et al.

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

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GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation.In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to ii thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot).The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.iii Dedicated to my beloved parents iv ACKNOWLEDGMENTS

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Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects

Cited by 98 publications

References 22 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

Study of self-heating effects in GaN HEMTs

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