Electro-thermal-mechanical computations in ZnO arrester elements

Boggs, S.A.; Kuang, J.; Andoh, Hideyasu; Nishiwaki, S.

doi:10.1109/61.847240

Cited by 18 publications

(6 citation statements)

References 4 publications

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“…The thermal diffusivity of the zinc oxide nanocrystal is found to be 1.7 × 10 −5 m 2 ·s −1 and is compared with the thermal diffusivity of the ZnO nanowire which is 7.15 × 10 −5 m 2 ·s −1 [22], whereas that for bulk ZnO is 7.1 × 10 −6 m 2 ·s −1 [23] and the thermal conductivity of the nanocrystals is 50.16 W·m −1 ·K −1 . The thermal diffusivity and thermal conductivity of the nanocrystal are at least one order of magnitude higher than that for bulk ZnO [22].…”

Section: Depth Profile Analysismentioning

confidence: 98%

On the Optical, Thermal, and Vibrational Properties of Nano-ZnO:Mn, A Diluted Magnetic Semiconductor

Lakshmi

Ramachandran

2007

Int J Thermophys

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Nano-zinc oxide and Mn-doped zinc oxide were synthesized by a chemical process, and the average size of the particles observed was 35 nm for nanoZnO. Optical and thermal characterizations were carried out by means of photoluminescence and photoacoustic spectroscopy. It was found that nanoZnO has a thermal diffusivity one order of magnitude larger than bulk ZnO. Similarly, a less explored localized defect mode in ZnO:Mn was studied theoretically and experimentally using FTIR spectroscopy. The localized mode was experimentally found to be 514 cm −1 , compared to its theoretical value of 502 cm −1 . These values suggest that the current theory of bulk materials can also be extended to nanosystems and they are consistent with our hypothesis that Mn goes substitutionally as an impurity displacing Zn in nano-ZnO.

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Section: Depth Profile Analysismentioning

confidence: 98%

On the Optical, Thermal, and Vibrational Properties of Nano-ZnO:Mn, A Diluted Magnetic Semiconductor

Lakshmi

Ramachandran

2007

Int J Thermophys

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“…During the working life, varistors are subjected to electrical, thermal and mechanical stresses [17]. Material variation and therefore V – I characteristic degradation in during operation conditions (operating history) depends on the effect of duration, frequency and amplitude of over voltage and current strikes on MOSA materials.…”

Section: Effective Factors On Varistor V–i Characteristicmentioning

confidence: 99%

Thermal balance diagram modelling of surge arrester for thermal stability analysis considering ZnO varistor degradation effect

Seyyedbarzegar¹,

Mirzaie²

2016

IET Generation, Transmission & Distribution

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“…Empirically I-V a , where a can be 50 or higher, and these devices are ideally suited for use in electrical surge arresters. [1][2][3][4] In the microstructured ZnO devices, energy states are created due to dislocations and dangling bonds arising from the crystallographic mismatch between adjacent grains. Free carriers (usually electrons present in the slightly n-type ZnO material) are trapped, leading to the creation of electrostatic barriers at the interface.…”

Section: Z Inc Oxide Varistors Are Ceramic Devices Made By Sinteringmentioning

confidence: 99%

Electrothermal Model Evaluation of Grain Size and Disorder Effects on Pulsed Voltage Response of Microstructured ZnO Varistors

Zhao

Joshi

Hjalmarson

2008

Journal of the American Ceramic Society

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Time‐dependent, two‐dimensional, electrothermal simulations based on random Voronoi networks have been developed to study the internal heating, current distributions and breakdown effects in ZnO varistors in response to high‐voltage pulsing. The simulations allow for dynamic predictions of internal failures and to track the progression of hot‐spots and thermal stresses. The focus is on internal grain‐size variations and relative disorder including micropores. Our results predict that parameters such as the hold‐off voltage, internal temperature, and average dissipated energy density would be higher with more uniform grains. This uniformity is also predicted to produce lower thermal stresses and to allow for the application of longer duration pulses. It is shown that the principal failure mechanism arises from internal localized melting, while thermal stresses are well below the thresholds for cracking. Finally, detrimental effects of micropores have been quantified and shown to be in agreement with experimental trends.

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Electro-thermal-mechanical computations in ZnO arrester elements

Cited by 18 publications

References 4 publications

On the Optical, Thermal, and Vibrational Properties of Nano-ZnO:Mn, A Diluted Magnetic Semiconductor

On the Optical, Thermal, and Vibrational Properties of Nano-ZnO:Mn, A Diluted Magnetic Semiconductor

Thermal balance diagram modelling of surge arrester for thermal stability analysis considering ZnO varistor degradation effect

Electrothermal Model Evaluation of Grain Size and Disorder Effects on Pulsed Voltage Response of Microstructured ZnO Varistors

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