Electro-optical characterization of Ge–Se–Te glasses

Zavadil, J.; Костка, П.; Pedlikova, J.; Žďánský, K.; Kubliha, Marián; Labaš, Vladimír; Kaluzny, J.

doi:10.1016/j.jnoncrysol.2008.12.025

Cited by 10 publications

(3 citation statements)

References 11 publications

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“…These narrow features superimposed on the host-glass low-temperature PL spectra that are related to energy transfer have been observed in our laboratory [15][16][17] and also by other authors [22,23] previously in several chalcogenide and heavy metal oxide glass systems doped with RE 3+ ions. However, these observations were so far presented in a scattered way without proper discussion.…”

Section: Introductionsupporting

confidence: 83%

“…We focus on the low-temperature PL spectra in the NIR range to complement our previous investigation of these systems at room temperature in the wavelength range mostly not exceeding 900 nm [2,11,13,14]. Another reason to focus on the low-temperature PL in the NIR range is our previous experience with low-temperature PL spectra collected from various glass systems doped with RE 3+ ions [15][16][17].…”

Section: Introductionmentioning

confidence: 97%

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Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Костка

Zavadil

Iovu

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionsupporting

confidence: 83%

Section: Introductionmentioning

confidence: 97%

Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Костка

Zavadil

Iovu

et al. 2015

Journal of Alloys and Compounds

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“…It has been suggested [15,16] that such transitions are from band tails to states near the middle of the gap. The host glass luminescence is observed in glass materials usually at low temperatures, and is attributed to deep states within the band-gap which are due to native defects [15][16][17][18][19][20]. These states could be optically excited in the host glass Urbach absorption edge [20].…”

mentioning

confidence: 99%

Photoluminescence properties of Er‐doped Ge–In(Ga)–S glasses modified by caesium halides

Ivanova

Zavadil

Костка

et al. 2017

Physica Status Solidi (b)

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Chalcohalide Ge–In–S and Ge–Ga–S glasses modified by CsX (X = Cl, Br, and I), and doped with Er in the range from 0.1 to 0.5 at.%, have been prepared and investigated. The influence of CsX addition on their optical properties has been studied by transmission and photoluminescence spectroscopy. Nominal compositions of [Ge25In(Ga)10S65]90(CsX)10 have been selected as host materials. The shift of the absorption edge as a function of caesium halides is observed in GeInS (CsX) system with maximum band gap observed for CsI. The low‐temperature photoluminescence reveals the broad band luminescence of the host glass centered at around the half of the band gap energy with superimposed 4f–4f radiative transitions of Er3+ ions. The position of the broad luminescence band is considerably shifted to higher energy in the case of CsI as compared to CsCl and CsBr. In the case of Er‐doped chalcohalide (Ge25Ga10S65)90(CsBr)10 system, a considerable narrowing of 4I13/2 → 4I15/2 radiative transitions of Er3+ ions accompanied by the pronounced splitting of the emission sub‐bands clearly documents the increasing ceramics‐like nature in the host material due to the admixture of CsBr. The influence of CsBr concentration on the shape of the broad‐band luminescence of Ge–Ga–S–CsBr host is also reported.

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