Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Костка, П.; Zavadil, J.; Iovu, M. S.; Ivanova, Z.G.; Furniss, David; Seddon, Angela B.

doi:10.1016/j.jallcom.2015.05.135

Cited by 12 publications

(4 citation statements)

References 27 publications

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“…From the application viewpoint of laser technology and telecommunications, the introduction of erbium to such materials has significant advantages since the emission bands of erbium-doped glasses and single crystals are usually intense and narrow. The addition of erbium is also accompanied by the extinction of PL radiation [21] which is due to the crystalline or amorphous chalcogenide host. The influence of external factors on the PL efficiency in erbium-doped chalcogenides is limited due to the shielding of radiative transitions in the 4f-shell of Er by outer shells.…”

Section: Photoluminescence In Erbium-doped Single Crystalsmentioning

confidence: 99%

Mechanism of Photoluminescence in Erbium-Doped Chalcogenide

Halyan¹,

Ivashchenko²

2020

Luminescence - OLED Technology and Applications

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The monograph describes the technique of the synthesis of glasses and the method of the growth of erbium-doped single crystals. The photoluminescence spectra of Ag 0.05 Ga 0.05 Ge 0.95 S 2-Er 2 S 3 glasses and glasses from the Ga 2 S 3-La 2 S 3-Er 2 S 3 system have been investigated in the visible and near-infrared ranges. According to the energy transitions in the erbium ions, a radiation mechanism for conversion and up-conversion luminescence has been established. The role of structural ordering and the influence of defects on the radiation efficiency of Er 3+ ions have been investigated. The spectra of photoluminescence of (Ga 54.59 In 44.66 Er 0.75) 2 S 300 and (Ga 69.75 La 29.75 Er 0.5) 2 S 300 single crystals have been studied. The efficiency of the radiation of the amorphous and crystalline materials has been compared. Also, the temperature dependence of the integral intensity of the radiation of glasses and single crystals has been studied. It is established that in a limited temperature range, these materials can be used for the manufacture of non-contact optical thermosensors.

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Section: Photoluminescence In Erbium-doped Single Crystalsmentioning

confidence: 99%

Mechanism of Photoluminescence in Erbium-Doped Chalcogenide

Halyan¹,

Ivashchenko²

2020

Luminescence - OLED Technology and Applications

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“…These states could be optically excited in the host glass Urbach absorption edge . He‐Ne (632.8 nm line) laser was used for excitation in this study, which implies that Er 3+ ions are excited via the electronic structure of the host glass or directly by Ground State Absorption (GSA) and Excited State Absorption (ESA) channels .…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence properties of Er‐doped Ge–In(Ga)–S glasses modified by caesium halides

Ivanova

Zavadil

Костка

et al. 2017

Physica Status Solidi (b)

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Chalcohalide Ge–In–S and Ge–Ga–S glasses modified by CsX (X = Cl, Br, and I), and doped with Er in the range from 0.1 to 0.5 at.%, have been prepared and investigated. The influence of CsX addition on their optical properties has been studied by transmission and photoluminescence spectroscopy. Nominal compositions of [Ge25In(Ga)10S65]90(CsX)10 have been selected as host materials. The shift of the absorption edge as a function of caesium halides is observed in GeInS (CsX) system with maximum band gap observed for CsI. The low‐temperature photoluminescence reveals the broad band luminescence of the host glass centered at around the half of the band gap energy with superimposed 4f–4f radiative transitions of Er3+ ions. The position of the broad luminescence band is considerably shifted to higher energy in the case of CsI as compared to CsCl and CsBr. In the case of Er‐doped chalcohalide (Ge25Ga10S65)90(CsBr)10 system, a considerable narrowing of 4I13/2 → 4I15/2 radiative transitions of Er3+ ions accompanied by the pronounced splitting of the emission sub‐bands clearly documents the increasing ceramics‐like nature in the host material due to the admixture of CsBr. The influence of CsBr concentration on the shape of the broad‐band luminescence of Ge–Ga–S–CsBr host is also reported.

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“…In another study, sulfide and oxysulfide bulk glasses Ga–La–S–O, Ge–Ga–S, and Ge–Ga–As–S doped, or codoped, with various rare-earth (RE 3+ ) ions was investigated for their room temperature transmission and low-temperature PL . Photoluminescence spectra were collected using external excitation into the Urbach tail of the fundamental absorption edge of the host glass.…”

Section: Low-temperature Luminescencementioning

confidence: 99%

“…In another study, sulfide and oxysulfide bulk glasses Ga−La− S−O, Ge−Ga−S, and Ge−Ga−As−S doped, or codoped, with various rare-earth (RE 3+ ) ions was investigated for their room temperature transmission and low-temperature PL. 117 Photoluminescence spectra were collected using external excitation into the Urbach tail of the fundamental absorption edge of the host glass. The results from this study indicated that low temperature PL spectra were dominated by the broad-band luminescence of the host glass, with relatively sharp superimposed emission bands due to radiative transitions within 4f shells of RE 3+ ions.…”

Section: ■ Total Luminescence and Synchronousmentioning

confidence: 99%