Electro-optic modulation in crystal-ion-sliced <i>z</i>-cut LiNbO3 thin films

Ramadan, Tarek A.; Levy, M.; Osgood, Richard M.

doi:10.1063/1.126046

Cited by 79 publications

(20 citation statements)

References 9 publications

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“…They were not flat but curved in the long direction with the implanted side on the inside of the curvature to stress caused by the crystal damage in the implanted layer [6]. The curvature can be removed by thermal annealing at over 800 0 C [7]. Fig.…”

Section: Fabrication Of Single Crystal Linbo 3 Micro-plateletsmentioning

confidence: 97%

Hybrid Si-LiNbO 3 micro-ring resonators for active microphotonic devices

et al. 2011

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A hybrid structure of Si-LiNbO 3 micro-ring resonator was fabricated. Free standing single crystal LiNbO 3 microplatelets (mm long and 1 um thick) were obtained from a bulk LiNbO 3 wafer by ion implantation and thermal shock. They were then transferred, positioned and bonded to Si micro-ring structure. In this hybrid structure, a large portion of the TM field is located above and below the Si waveguide. Then, the effective index of the Si waveguide can be changed by varying the refractive index of the LiNbO 3 cladding layer. Theoretical calculation with finite difference method proved that the ratio between effective index change of the Si waveguide and index change of LiNbO 3 cladding layer was 0.31 (Δn Si /Δn LNO = 0.31) for TM mode. Then, calculated Δn Si was about 1×10 -4 with 3 V. The effective r coefficient of Si and tuning sensitivity were about 7.2 pm/V and 2.55 GHz/V, respectively. These values are comparable to current active Si photonics with plasma dispersion methods. In addition, high speed modulation (over 40 GHz) is possible in this hybrid structure. This demonstration of a single crystalline LiNbO 3 acting as the upper cladding shows the possibility of integrating a very good EO and NLO material into the silicon-on-insulator photonics technology.

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Section: Fabrication Of Single Crystal Linbo 3 Micro-plateletsmentioning

confidence: 97%

Hybrid Si-LiNbO 3 micro-ring resonators for active microphotonic devices

et al. 2011

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“…The film was sandwiched between two metal electrodes; no buffer oxide layer was employed in this experiment. The measured V π L product required for optical switching at 1550 nm was~8 Vcm, 29 while a theoretical value of V π L = λ⋅d /n e 3 ⋅r 33 -n o 3 ⋅r 13  ≈ 7.4 V⋅cm is obtained for an ideal thin-film intensity modulator with bulk properties. Given that the measured CIS film birefringence closely approximates bulk values, the electro-optical coefficients of the thin CIS material are essentially those of the singlecrystal bulk.…”

Section: Low-voltage Cis-based Electro-optic Modulatorsmentioning

confidence: 99%

“…30 χ (2) -related optical properties of the CIS LiNbO 3 material have been measured, and found to be equal to, or closely approximate to the bulk values. 20,29 Electro-optical coefficients (r 33 , r 13 ) were determined using an intensity modulator configuration (input light at 45°relative to the TE/TM polarization). The film was sandwiched between two metal electrodes; no buffer oxide layer was employed in this experiment.…”

Section: Low-voltage Cis-based Electro-optic Modulatorsmentioning

confidence: 99%

Hybrid integrated tunable optical transmitter subsystem on a chip

Eldada¹,

Newburgh²,

Fujita³

et al. 2002

SPIE Proceedings

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The need for tunable optical transmitters in optical networking is growing at a rapid rate. A tunable optical transmitter is the combination of a tunable laser, an isolator, and a modulator. Although today lasers and modulators could be integrated together on a single chip, an integrated component of this type would not be useful because the absence of an isolator between the two elements would cause optical reflections to reach the laser, leading to a high level of frequency chirp and relaxation oscillations. Therefore discrete external modulators are used, and lasers are coupled to them through discrete optical isolators. We report on recent developments in integrated active, thermo-optic, magneto-optic and electro-optic technologies that enable the production of a fully integrated tunable transmitter. This transmitter consists of a planar polymer waveguide circuit that is built on a silicon chip and in which films of a variety of materials are embedded. This subsystem on a chip includes a laser chip coupled to a thermo-optically tunable planar polymeric filter resulting in a tunable external cavity laser; an integrated magneto-optic isolator consisting of a planar polymer waveguide with inserted thin films of yttrium iron garnet for Faraday rotation, crystal ion sliced LiNbO 3 for half-wave retardation, and polarizers; and an electro-optic modulator consisting of a crystal ion sliced LiNbO 3 thin film patterned with a Mach-Zehnder interferometer and grafted into the polymer circuit, capable of operating with less than 5 Volts at modulation speeds up to 40 GHz.

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“…In association with nano-structures such has photonic crystals, membrane or nano-waveguide, it has been proven that LN is an ideal candidate for electro-or acousto-optic modulation [6,7], lasers [8], or thermo-optic sensors [9]. However, these devices require patterning, etching or milling of the LN substrate.…”

Section: Introductionmentioning

confidence: 99%