2019
DOI: 10.1016/j.sna.2019.04.036
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Electro-mechanical properties of multilayered aluminum nitride and platinum thin films at high temperatures

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Cited by 14 publications
(4 citation statements)
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“…Some studies have revealed that GF of high‐temperature TFSG attenuates to different degrees at high temperature. [ 45,84 ] Interestingly, the sensitivity of SiCN TFSG increased significantly at high temperature (GF = 3 at 30 °C and GF = 20 at 800 °C). The increased sensitivity may be related to thermal‐assisted hopping/tunneling electron transport in the tunneling‐percolation region (i.e., middle and near‐surface region of film).…”
Section: Resultsmentioning
confidence: 99%
“…Some studies have revealed that GF of high‐temperature TFSG attenuates to different degrees at high temperature. [ 45,84 ] Interestingly, the sensitivity of SiCN TFSG increased significantly at high temperature (GF = 3 at 30 °C and GF = 20 at 800 °C). The increased sensitivity may be related to thermal‐assisted hopping/tunneling electron transport in the tunneling‐percolation region (i.e., middle and near‐surface region of film).…”
Section: Resultsmentioning
confidence: 99%
“…Several approaches have been proposed for the mitigation of delamination and recrystallization of noble metal thin films at high temperatures: (1) the deposition of bilayer structures with an adhesion layer (Ti, Ta, Cr, Zr) between the substrate and the conductive layer [17][18][19][20][21][22][23][24] or the use of an oxidizing atmosphere during the initial stage of the noble metal sputtering [25,26], (2) the sputtering of a protective dielectric layer (Si, Al 2 O 3 , Si 3 N 4 , TiO 2 , SiAlON, SiO 2 + Si 3 N 4 ) onto the top surface of metal layer [16,24,[27][28][29][30], (3) alloying platinum with metals that have higher melting point (Ir, Rh) [24,[31][32][33][34], and (4) the incorporation of refractory oxides (ZrO 2 , HfO 2 , Nb 2 O 3 , Y 2 O 3 , RuO 2 ), acting as anchors to stabilize the grain boundaries of the metal phase [24,33,[35][36][37][38]. All these approaches require recrystallization annealing at temperatures exceeding the operating temperature range of thin-film devices [17,39].…”
Section: Introductionmentioning
confidence: 99%
“…Ni80Cr20 and TiAlN are used at temperatures below 600 °C. Pt [ 12 , 13 ] is used in the high-temperature environment of 500 °C–900 °C and is easy to oxidize and dissolve but is unsuitable for long-term use at high temperatures. ITO [ 14 , 15 , 16 ] has high stability and excellent resistivity, but its own electrical and chemical properties fluctuate considerably at temperatures below 950 °C with resistance drift, which affects the accuracy of the strain output results.…”
Section: Introductionmentioning
confidence: 99%