Electro-Luminescence from Ultra-Thin Silicon

Saito, Shinichi; Hisamoto, D.; Shimizu, Haruka; Hamamura, Hirotaka; Tsuchiya, R.; Matsui, Yasuhiro; Mine, T.; Arai, Tadashi; Sugii, Nobuyuki; Torii, Kazuyoshi; Kimura, S.; Onai, T.

doi:10.1143/jjap.45.l679

Cited by 72 publications

(66 citation statements)

References 19 publications

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“…Similarly, ultrathin Si͑100͒ film with thickness of d ϳ 1.3 nm on a silicon-on-insulator substrate emitted light at ϳ1.46 eV and considered its emission mechanism as the quasidirect transitions caused by the quantum-mechanical momentum relaxation. 49 Toyama et al 50 also observed the direct-gap-like ER signals at ϳ1.20− 1.37 eV arising from the fundamental absorption edge E g X of Si nanocrystallites deposited on glass substrates by radio frequency ͑rf͒ plasma chemical vapor deposition. They observed that by decreasing the mean crystallite size from ϳ3 nm to below 2 nm the fundamental energy gap is increased, i.e., blueshifted, and the ⌬R / R signal is intensified.…”

Section: -6mentioning

confidence: 97%

Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF∕I2 solution

Adachi

2007

Journal of Applied Physics

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The optical properties of porous silicon ͑PSi͒ photoetched in aqueous HF/ I 2 solution are investigated using spectroellipsomety ͑SE͒, electroreflectance ͑ER͒, photovoltage ͑PV͒, photoconductivity ͑PC͒, photoluminescence ͑PL͒, and Fourier transform infrared ͑FTIR͒ spectroscopy. The PSi layers were formed in a HF/ I 2 solution on n-Si substrates under Xe lamp illumination. The SE ͑E͒ and related data show an interference oscillation in the region below E ϳ 3 eV, where the PSi material is nearly transparent. The PV and PC spectra reveal three individual peaks A, B, and C at ϳ1.2, ϳ1.7, and ϳ2.5 eV, respectively, arising from the PSi layer itself. Peak C is also observed in the ER spectrum, together with a broadened E 1 peak at ϳ3.4 eV. Change in the fundamental-absorption-edge nature ͑E g X ͒ from the indirect gap in crystalline silicon to the quasidirect gap in PSi is found in the PV and PC spectra. The PL spectrum shows a broad peak at ϳ2.0 eV͑B͒. Peaks A, B, and C observed in the PSi layer may originate from the nondirect optical transitions at and above the lowest absorption edges E g X ͑A and B͒ and E g L ͑C͒. The quantum-mechanical size effect, i.e., a relaxation of the momentum conservation, makes possible the nondirect or quasidirect transitions at and above E g X and E g L in porous materials. The FTIR data support that the PL emission is due to the surface-sensitive quantum confinement effect.

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Section: -6mentioning

confidence: 97%

Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF∕I2 solution

Adachi

2007

Journal of Applied Physics

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“…The final thermal silicon dioxide layer encapsulating the nanowires is approximately 30 nm thick. Although thin films or small diameter silicon nanowires on SOI can lead to a quasi-direct band-gap semiconductor due to the quantum mechanical confinement effect [7], for this process both the film thickness and nanowire diameter are too large for this effect to occur. …”

Section: B Soi Technologymentioning

confidence: 99%

Electroluminescence From Two Junction Punch Through Structures in Silicon Nanowires

Plessis

Joubert

2015

IEEE Photon. Technol. Lett.

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Abstract-Hot carrier electroluminescence in two junction devices under punch through conditions manufactured in silicon on insulator nanowires are investigated. Of interest is the spectral content of the light emission, as well as the external power efficiency and the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to a bulk silicon p-n junction in avalanche.

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“…An optically pumped light emitting device is certainly possible, but an electrically excited LED requires vertical carrier transport through the wide band gap a-SiO 2 barriers. For thin enough barriers such transport via hole tunneling has been observed (74,75), visible LEDs have been demonstrated (50)(51)(52)(53)76,77) and, remarkably, a silicon light-emitting transistor for on-chip optical interconnection has been produced (78). Following a theoretical prediction of a large optical gain in ultra thin silicon quantum wells (79), Saito et al (80) have recently observed optical gain and stimulated emission by current injection into an ultra thin layer of silicon embedded in a resonant optical cavity.…”

Section: Future Prospectsmentioning

confidence: 99%

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells

Lockwood

2011

ECS Trans.

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In opto-electronics and photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Amongst a number of diverse approaches to engineering efficient light emission in silicon nanostructures, one system that has received considerable attention has been Si/SiO 2 quantum wells. Engineering such structures has not been easy, because to observe the desired quantum confinement effects, the quantum well thickness has to be less than 5 nm. Nevertheless, such ultra thin structures have now been produced by a variety of techniques. The SiO 2 layers are amorphous, but the silicon layers can range from amorphous through nanocrystalline to single-crystal form. The fundamental band gap of the quantum wells has been measured primarily by optical techniques and strong confinement effects have been observed. A number of theories based primarily on ab initio approaches have been developed to explain these results with varying degrees of success. A detailed comparison is made between theoretical and experimental determinations of the band gap in Si/SiO 2 quantum wells.

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Electro-Luminescence from Ultra-Thin Silicon

Cited by 72 publications

References 19 publications

Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF∕I2 solution

Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF∕I2 solution

Electroluminescence From Two Junction Punch Through Structures in Silicon Nanowires

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells

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Electro-Luminescence from Ultra-Thin Silicon

Cited by 72 publications

References 19 publications

Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF∕I2 solution

Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF∕I2 solution

Electroluminescence From Two Junction Punch Through Structures in Silicon Nanowires

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO2 Quantum Wells

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Product

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(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells