Electro-chemo-mechanical properties in nanostructured Ca-doped ceria (CDC) by field assisted sintering

Kabir, Ahsanul; Zhang, Haiwu; Colding‐Jørgensen, Sofie; Santucci, Simone; Molin, Sebastian; Esposito, Vincenzo

doi:10.1016/j.scriptamat.2020.06.003

Cited by 12 publications

(24 citation statements)

References 28 publications

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“…15 Besides, at high frequencies, the strain value reduced significantly but followed the typical linear relation. 30 On the other hand, neither strain saturation nor reduction was noticed for the SDC and MDC compounds. The electrostrictive strain coefficient (M 33 ) as a function of applied frequency is reported in Fig.…”

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confidence: 97%

Electromechanical dopant–defect interaction in acceptor-doped ceria

et al. 2020

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Electromechanical dopant–defect interaction in acceptor-doped ceria

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“…In epitaxial films, electrostriction enhances by aligning the applied electric field to the Ce Ce −V O pairs 11 . In polycrystalline thin films [1][2][3]5,13 and bulk ceramics 4,14 , the presence of grain boundaries and disorder leads to randomly oriented Ce Ce −V O pairs. Further, crystalline disorder introduces a wide range of electrosteric factors with a complex variety of configurations and electromechanical responses 14 .…”

Section: Introductionmentioning

confidence: 99%

“…In polycrystalline thin films [1][2][3]5,13 and bulk ceramics 4,14 , the presence of grain boundaries and disorder leads to randomly oriented Ce Ce −V O pairs. Further, crystalline disorder introduces a wide range of electrosteric factors with a complex variety of configurations and electromechanical responses 14 . The vacancy's elastic response to an electric field is indeed related to the temperature 10,[15][16][17] .…”

Section: Introductionmentioning

confidence: 99%

“…However, the suppression of thermally driven mechanisms can help the analysis of this phenomenon. Some studies have already unveiled some other typical oxygen vacancies and Ce Ce −V O pairs effects at low temperatures 6,14,22,23 . In CGO thin films, a cooling down to -123°C leads to a reduction of dielectric constant as chargehopping decreases (exponentially) 22 .…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the cage of eight O -2 ions surrounding the dopant cation assumes an asymmetrical configuration 23 . As electrostriction in CGO results from lattice distortions around the oxygen vacancy 6,14 , low-temperature dynamics are likely to influence the mechanisms which produce this effect. In the present paper, we investigate the structural and chemical environments in the vicinity of vacancies by X-ray Absorption Spectroscopy (XAS).…”

Section: Introductionmentioning

confidence: 99%

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Electromechanically active pair dynamics in a Gd-doped ceria single crystal

Santucci

Zhang

Kabir

et al. 2021

Phys. Chem. Chem. Phys.

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Non‐Classical Electrostriction in Hydrated Acceptor Doped BaZrO₃: Proton Trapping and Dopant Size Effect

Makagon

Kraynis

Merkle

et al. 2021

Adv Funct Materials

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Point defects such as oxygen vacancies and protonic interstitials are not only essential for ionic conductivity in oxides since they also affect the mechanical and electromechanical properties. These properties of nominally dry and hydrated proton-conducting BaZr 0.85 M 0.15 O 2.925+δ H 2δ (M = Al, Ga, Sc, In, Y, Eu) ceramics are investigated. Doping decreases Young's modulus with increasing ionic radii difference between the dopant and the host. Nominally dry samples show consistently higher Young's moduli than hydrated samples. All samples exhibit large non-classical electrostriction, with a negative electrostriction coefficient M 33 <0. M 33 shows saturation with the field and a non-ideal Debye relaxation with frequency. The low-frequency M 33 value for both dry and hydrated samples shows a similar dependence on dopant radius as Young's modulus. For the hydrated samples, the relaxation frequency increases by a factor >100 in the series Ga-Y, emphasizing the importance of proton trapping, with Y-doped samples having minimal trapping energy. This coincides with the fact that the saturation strain for Y-doped samples is also the smallest. In light of these findings, it is concluded that the present data give strong evidence for the existence of defect-related elastic dipoles in acceptor doped barium zirconate and that the non-classical electrostriction originates in their reorientation under electric field.

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Electro-chemo-mechanical properties in nanostructured Ca-doped ceria (CDC) by field assisted sintering

Cited by 12 publications

References 28 publications

Electromechanical dopant–defect interaction in acceptor-doped ceria

Electromechanical dopant–defect interaction in acceptor-doped ceria

Electromechanically active pair dynamics in a Gd-doped ceria single crystal

Non‐Classical Electrostriction in Hydrated Acceptor Doped BaZrO₃: Proton Trapping and Dopant Size Effect

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Electro-chemo-mechanical properties in nanostructured Ca-doped ceria (CDC) by field assisted sintering

Cited by 12 publications

References 28 publications

Electromechanical dopant–defect interaction in acceptor-doped ceria

Electromechanical dopant–defect interaction in acceptor-doped ceria

Electromechanically active pair dynamics in a Gd-doped ceria single crystal

Non‐Classical Electrostriction in Hydrated Acceptor Doped BaZrO3: Proton Trapping and Dopant Size Effect

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Non‐Classical Electrostriction in Hydrated Acceptor Doped BaZrO₃: Proton Trapping and Dopant Size Effect