2021
DOI: 10.1002/adfm.202104188
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Non‐Classical Electrostriction in Hydrated Acceptor Doped BaZrO3: Proton Trapping and Dopant Size Effect

Abstract: Point defects such as oxygen vacancies and protonic interstitials are not only essential for ionic conductivity in oxides since they also affect the mechanical and electromechanical properties. These properties of nominally dry and hydrated proton-conducting BaZr 0.85 M 0.15 O 2.925+δ H 2δ (M = Al, Ga, Sc, In, Y, Eu) ceramics are investigated. Doping decreases Young's modulus with increasing ionic radii difference between the dopant and the host. Nominally dry samples show consistently higher Young's moduli th… Show more

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Cited by 11 publications
(5 citation statements)
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References 39 publications
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“…[59] The oxygen-defective materials having both large electromechanical coefficients and low permittivity are regarded as a new class of electrostrictors -similar features were observed in polymer composites, protonated metal oxides, and lead halide perovskites. [59,[62][63][64] There is a remaining debate on the sign of field-induced electrostrictive strain in oxygen-defective oxides. For example, the sign of the field-induced strain was proposed to be negative (i.e., contracts along the direction parallel to the electric field applied) with an oxygen vacancy-mediated lattice contraction (electrostatic interactions).…”
Section: Electrostriction In Linear and Non-linear Dielectricsmentioning
confidence: 99%
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“…[59] The oxygen-defective materials having both large electromechanical coefficients and low permittivity are regarded as a new class of electrostrictors -similar features were observed in polymer composites, protonated metal oxides, and lead halide perovskites. [59,[62][63][64] There is a remaining debate on the sign of field-induced electrostrictive strain in oxygen-defective oxides. For example, the sign of the field-induced strain was proposed to be negative (i.e., contracts along the direction parallel to the electric field applied) with an oxygen vacancy-mediated lattice contraction (electrostatic interactions).…”
Section: Electrostriction In Linear and Non-linear Dielectricsmentioning
confidence: 99%
“…[ 56 ] However, exceptionally large electromechanical properties (| M | ≈ 5–100 × 10 −18 m 2 V −2 ) have been found in oxygen‐defective metal oxides such as Gd‐doped CeO 2‐ δ , (Nb,Y)‐stabilized Bi 2 O 3‐ δ , and BaCeO 3‐ δ with intrinsic permittivity of ε r ≈ 20–40 and Q coefficients in the range of ≈40–300 m 4 C −2 . [ 3,60–62 ] These materials do not obey the empirical Newnham's relation (| M | or | Q | versus s/ε), and their electrostriction coefficients are three orders larger than values for typical perovskites including SrTiO 3 , BaTiO 3 , PbTiO 3 , Pb(Ti 1‐ x Zr x )O 3 , and Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 ( Q ≈ 0.02–0.07 m 4 C −2 ). [ 59 ]…”
Section: Electromechanics and Symmetry Breaking In Oxidesmentioning
confidence: 99%
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“…It is worth noting that XPS is a surface technique. As observed by Makagon et al, doped BaZrO 3 exhibits nonclassical electrostriction behavior, which means that under large electric field, the location of protons affects the elastic dipole moment in the lattice, imposing changes in the crystal structure. Other characterization methods, such as in situ X-ray diffraction or Raman spectroscopy, could be used under applied external potential to explore the behavior of protons in ceramics.…”
mentioning
confidence: 82%
“…Smaller acceptor dopants with high electronegativity exhibit a pronounced proton trapping effect over larger acceptor dopants with low electronegativity. A DFT study conducted by Makagon et al 115 illustrates a congruent result of increased proton trapping effect by smaller acceptor dopants with suitable trapping energy estimations. While scandium (Sc 3+ , (r = 0.745 Å)) demonstrated a trapping energy of 0.28 eV, gallium (Ga 3+ , (r = 0.62 Å)) showcased a trapping energy of 0.49 eV in the first coordination (closest to the dopant).…”
Section: Oxygen Vacancy Concentration [O Omentioning
confidence: 94%