Electrically writable silicon nanophotonic resistive memory with inherent stochasticity

Singh, Lalit; Jain, S. C.; Kumar, Mukesh

doi:10.1364/ol.44.004020

Cited by 20 publications

(4 citation statements)

References 28 publications

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“…Moreover, as this design has a compact size (overall length is 610 nm) much shorter than other structures [10,14,35], the intrinsic propagation loss of the plasmonic taper, positively correlated to its length, is reduced [36], resulting in a quite low loss of typically ~1 dB around 1550 nm (Figure 3f). Although the properties of the device discussed in this work are evaluated based on the simulations, and are perhaps not suitable to directly compare with the experimental reports summarized in Table 1 [10,14,19,20,35,37], the achieved results still imply that introducing the small triangle-shaped metal taper on top of the dielectric waveguide could be a promising design for a plasmonic memristor with superior performances. However, it is noteworthy that at the other important communication window (1.31 µm, O-band), the spectra change induced by the memristive switching is much weaker, and in an even shorter wavelength range, and the transmission spectra of the device at the HR state become very close to that at the LR state (see Figures 3e and 4); hence, in the following, we mainly focus on the 1.55 µm range.…”

Section: The Properties Of the Plasmonic Memristor Specified Sizementioning

confidence: 99%

“…This system (namely, "plasmonic memristor"), on one hand, has volatile or non-volatile memory with electrical write/erase and optical readout functionality [10,15,16]. On the other artificial synapses, image recognition and even neuromorphic visual systems, were explored at different wavelength ranges [10,14,15,[19][20][21][22][23]. The plasmonic memristor based on a silicon photonics platform is especially attractive, due to its emerging chances to realize large-scale interrogation via a CMOS compatible process [10,14,15,19,20], as well as its potential to fuse its data processing capability with the strong power of silicon photonics on data transmission at communication wavelengths around 1.31 μm and 1.55 μm [19,20].…”

Section: Introductionmentioning

confidence: 99%

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An Ultra-Compact Design of Plasmonic Memristor with Low Loss and High Extinction Efficiency Based on Enhanced Interaction between Filament and Concentrated Plasmon

2021

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We present a numerical design of the plasmonic memristive switching device operated at the telecommunication wavelength of 1.55 μm, which consists of a triangle-shaped metal taper mounted on top of a Si waveguide, with rational doping in the area below the apex of the taper. This device can achieve optimal vertical coupling of light energy from the Si waveguide to the plasmonic region and, at the same time, focus the plasmon into the apex of the metal taper. Moreover, the area with concentrated plasmon is overlapped with that where the memristive switching occurs, due to the formation/removal of the metallic nano-filament. As a result, the highly distinct transmission induced by the switching of the plasmonic memristor can be produced because of the maximized interactions between the filament and the plasmon. Our numerical simulation shows that the device hasa compact size (610 nm), low insertion loss (~1 dB), and high extinction efficiency (4.6 dB/μm). Additionally, we point out that stabilizing the size of the filament is critical to improve the operation repeatability of the plasmonic memristive switching device.

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Section: The Properties Of the Plasmonic Memristor Specified Sizementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An Ultra-Compact Design of Plasmonic Memristor with Low Loss and High Extinction Efficiency Based on Enhanced Interaction between Filament and Concentrated Plasmon

2021

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“…Their optical analogs are expected to modulate the light transmission in a semi-continuous and non-volatile manner [2]. Among many nonvolatile, waveguide-integrated optical memristor technologies that have been reported up to date, optically addressable electronic memristors typically rely on using a filament to modulate the device [3][4][5] and others.…”

Section: Introductionmentioning

confidence: 99%

Lithium niobate long-period waveguide gratings integrated with bismuth ferrite (BiFeO3) resistive random access memory

Chuang,

Chang,

Huang

2024

Oxide-Based Materials and Devices XV

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We report the miniaturization of Ag/BiFeO3/ITO resistive random access memory (ReRAM) in the form of long-period waveguide grating, all fabricated entirely on z-cut lithium niobate (LiNbO3) substrate. The electric characterization vividly reveals a selector-like threshold-switching (TS) characteristic. It is well accepted that there are two filament formation mechanisms governing the operation of Ag/BiFeO3/ITO ReRAM, a two-side TS characteristic is typically generated when the positive and negative bias voltages are applied during the cycles. It is reasonable to believe the TS characteristic exists because the Joule heat produced during device operation cannot be dissipated effectively, resulting in the rupture of the conductive filament. To mitigate this shortcoming, replacing the BiFeO3 (BFO) layer of the original grating shape with a planar-layer structure is beneficial for heat dissipation, and this, in turn, would help to improve the characteristics of the ReRAM device by delivering the memory-switching characteristics as intended. As already mentioned, this ReRAM structure with the ITO bottom electrode fabricated over the lithium niobate waveguide can jointly serve as the long-period waveguide grating. Furthermore, when the Ag/BFO/ITO ReRAM structure's device area shrinks to 200 μm 2 , the growth path of the silver conductive filament is confined immediately above the lithium niobate waveguide. The corresponding spectral measurement shows that as the increasing number of ReRAM grating fingers are in the set state (silver conductive filaments formed), the energy of the transmission dips would decrease gradually in return, and during the reset state, the energy of the transmission dip would rise accordingly.

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“…Resistive switches are devices consisting of two-terminal, three-layered stacks with a controlling layer separated by two metal electrodes that can alter the resistance state. The controlling layer of memristor devices can be made of inorganic or organic material, which can range from semiconducting to insulating. − Resistance changes from a high-resistance state to a low-resistance state are primarily influenced by the formation and annihilation of conductive filaments within the active material between the two electrodes . The formation of conductive filaments (CFs) in resistive switches is controlled by two mechanisms: electrochemical metallization (ECM) and the valency change effect (VCM). − The application of an external electric field causes the diffusion or displacement of ions, which have the capacity to manipulate the light behavior, playing a crucial role in filament formation. , The changes can be detected and recorded by optical signals and utilized in various applications such as modulation, biosensing, ultrafast photodetection optical interconnect, resistive switch, neuromorphic computation, ,,, etc.…”

Section: Introductionmentioning

confidence: 99%

Double-Slot Nanophotonic Platform for Optically Accessible Resistive Switching with High Extinction Ratio and High Endurance

Kumar,

Mishra,

Kumar

et al. 2023

ACS Photonics

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Resistive devices have gained significant research attention in the past decade due to their attractive potential applications in nonvolatile memory and unconventional computing. We propose a double-slot nanophotonic structure for optically accessible resistive switching at a wavelength of 1.55 μm. The proposed silicon-based nanophotonic resistive switch determines its states by detecting two distinct levels of optical intensity transmission. This is achieved by applying an external voltage to both the electrodes, which leads to the formation and annihilation of Ag filaments within the controlling layer through the diffusion and rupture of metal ions in the SiO 2 region through the doubleslot region with vertical hybrid plasmonic confinement on both sides. The novel device geometry also enables a greater impact of p-Si on Ag filaments, providing us with an effective opto-conductive filament interaction. The proposed device offers the advantages of low operating voltage, high cycling endurance, and an ultrahigh extinction ratio of 35 dB using a strong light−matter interaction in 10 nm wide two-slot regions of SiO 2 for 20 μm long devices at subwavelength scales. The nanophotonic structure used in the device also exhibits broadband propagation in the wavelength range of 1.5 to 1.6 μm. The experimental results show that the proposed switch with its short and compact geometry has the potential for efficient and high-performance functionalities in optical interconnects, data storage, neuromorphic computing, and reconfigurable nanophotonic circuitry.

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Electrically writable silicon nanophotonic resistive memory with inherent stochasticity

Cited by 20 publications

References 28 publications

An Ultra-Compact Design of Plasmonic Memristor with Low Loss and High Extinction Efficiency Based on Enhanced Interaction between Filament and Concentrated Plasmon

An Ultra-Compact Design of Plasmonic Memristor with Low Loss and High Extinction Efficiency Based on Enhanced Interaction between Filament and Concentrated Plasmon

Lithium niobate long-period waveguide gratings integrated with bismuth ferrite (BiFeO3) resistive random access memory

Double-Slot Nanophotonic Platform for Optically Accessible Resistive Switching with High Extinction Ratio and High Endurance

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