Electrically tunable magnetic fluctuations in multilayered vanadium-doped tungsten diselenide

Nguyen, Lan-Anh T.; Jiang, Jinbao; Nguyen, Tuan Dung; Kim, Philip; Joo, Min‐Kyu; Duong, Dinh Loc; Lee, Young Hee

doi:10.1038/s41928-023-01002-1

Cited by 4 publications

(4 citation statements)

References 35 publications

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“…At the transition point, the material system can fluctuate between the two phases, acting as a two-level system (TLS). The magnetic phase transition is observed in many magnetic materials, characterized by a two-level resistance state. − The two-level system can also be related to the discrete fluctuations associated with the RTS noise . The RTS noise appears in the time domain as pulses with uniform amplitude but random pulse widths and intervals.…”

Section: Resultsmentioning

confidence: 99%

“…The nature of noise spectra is generally affected by the change in material phases in terms of electrical, structural, and magnetic properties. 50,72,73 When the material undergoes a phase change, the noise behavior can appear in the Lorentzian form due to the creation of a twolevel system. In our case, at 118 K, the material undergoes a transition from the PM to the AFM phase.…”

Section: ■ Experimental Results and Discussionmentioning

confidence: 99%

“…Since it appears only close to the magnetic phase transition at ∼118 K and disappears in the PM phase, it is evident that the Lorentzian component is associated with the magnetic phase transition and subsequent subtle change in its resistive behavior, as shown in Figure d. The nature of noise spectra is generally affected by the change in material phases in terms of electrical, structural, and magnetic properties. ,, When the material undergoes a phase change, the noise behavior can appear in the Lorentzian form due to the creation of a two-level system. In our case, at 118 K, the material undergoes a transition from the PM to the AFM phase.…”

Section: Resultsmentioning

confidence: 99%

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Electronic Noise Spectroscopy of Quasi-Two-Dimensional Antiferromagnetic Semiconductors

Ghosh,

Nataj,

Kargar

et al. 2024

ACS Appl. Mater. Interfaces

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We investigated low-frequency current fluctuations, i.e., electronic noise, in FePS 3 van der Waals layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectroscopy for advanced materials characterization of the charge carrier dynamics affected by spin ordering and trapping states. Owing to the high resistivity of the material, we conducted measurements on vertical device configuration. The measured noise spectra reveal pronounced Lorentzian peaks of two different origins. One peak is observed only near the Neél temperature, and it is attributed to the corresponding magnetic phase transition. The second Lorentzian peak, visible in the entire measured temperature range, has characteristics of the trap-assisted generation−recombination processes similar to those in conventional semiconductors but shows a clear effect of the spin order reconfiguration near the Neél temperature. The obtained results contribute to understanding the electron and spin dynamics in this type of antiferromagnetic semiconductors and demonstrate the potential of electronic noise spectroscopy for advanced materials characterization.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Experimental Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Electronic Noise Spectroscopy of Quasi-Two-Dimensional Antiferromagnetic Semiconductors

Ghosh,

Nataj,

Kargar

et al. 2024

ACS Appl. Mater. Interfaces

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“…The recent discovery of tunable room temperature ferromagnetism in atomically thin V‐doped TMD (V‐WS 2 , V‐WSe 2 , V‐MoS 2 ) semiconductors [ 52–54,61 ] has provided a new possibility for controlling their magnetic and magneto‐electronic properties through electrical and optical means. [ 54,56,57,59,62,93,94 ] By combining the light‐tunable magnetism of 2D‐DMSs and the spin Seebeck effect, [ 56,94,95 ] we have proposed an innovative strategy for the optic control of thermally driven spin currents across magnet/metal interfaces in spincaloritronic devices, potentially establishing a new subfield dubbed “Opto‐Spin‐Caloritronics”. [ 83 ] To fully exploit the optically tunable magnetic properties of 2D‐TMD DMSs and their heterostructures for spintronics, spin‐caloritronics, straintronics, and valleytronics (Figure 1), it is essential to comprehend the underlying mechanisms of light‐mediated magnetism in these 2D systems.…”

Section: Introductionmentioning

confidence: 99%

Transition Metal Dichalcogenides: Making Atomic‐Level Magnetism Tunable with Light at Room Temperature

Ortiz Jimenez,

Pham,

Zhou

et al. 2023

Advanced Science

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The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D‐DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M‐doped TX2, where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin‐caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D‐TMD DMSs and heterostructures. By combining magneto‐LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V‐doped TMD monolayers (e.g., V‐WS2, V‐WSe2). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D‐TMD heterostructures (VSe2/WS2, VSe2/MoS2), the significance of proximity, charge‐transfer, and confinement effects in amplifying light‐mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron–hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D‐TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next‐generation magneto‐optic nanodevices.

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Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

Choi,

Chae,

Han

et al. 2024

Applied Physics Letters

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Conducting channel migration depending on the thickness of 2D multilayers has been demonstrated theoretically and experimentally by ascribing it to the high interlayer barrier and thickness-dependent carrier mobility via an electrostatic gate and drain bias. However, the unique charge carrier transport feature is significantly suppressed when a high contact resistance is exhibited at the metal-to-2D semiconducting multilayers, in addition to the inherent tunneling barrier between neighboring layers. Herein, we report strong channel access contact resistance effects on the vertical carrier density profile and surface trap density along the thickness of WSe2 multilayer transistors. For the constructed top-contact electrodes demonstrating pseudo-ohmic behavior, we observed clear double humps in the second derivative of the transconductance (dgm) curves, implying conducting channel migration along the c-axis of the WSe2 multilayers, regardless of the drain bias (VD) conditions. Meanwhile, at the bottom-contact electrodes, demonstrating a relatively high contact resistance effect, the second hump of dgm exclusively appears at high VD regimes (3.0 V ≤ VD), signaling the restricted channel migration caused by poor contact quality, even in identical WSe2 multilayers. We further confirmed this distinct feature in dgm curves by connecting the top and bottom electrodes to support our observations. Furthermore, low-frequency noise measurements were performed to determine the surface trap density of the supporting dielectrics and the relevant carrier scattering mechanism. Our study provides valuable insight into the effects of contact resistance on carrier transport and the scattering mechanism in WSe2 multilayer transistors, shedding light on the optimization of device performance and contact quality.

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Electrically tunable magnetic fluctuations in multilayered vanadium-doped tungsten diselenide

Cited by 4 publications

References 35 publications

Electronic Noise Spectroscopy of Quasi-Two-Dimensional Antiferromagnetic Semiconductors

Electronic Noise Spectroscopy of Quasi-Two-Dimensional Antiferromagnetic Semiconductors

Transition Metal Dichalcogenides: Making Atomic‐Level Magnetism Tunable with Light at Room Temperature

Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

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