Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

Kryzhanovskaya, N. V.; Moiseev, E. I.; Polubavkina, Yu. S.; Maximov, M. V.; Kulagina, M. M.; Troshkov, S. I.; Zadiranov, Yu. M.; Lipovskii, A. A.; Baidus, N. V.; Dubinov, A. A.; Krasilnik, Z. F.; Новиков, А. В.; Павлов, Д. А.; Rykov, A. V.; Sushkov, A. A.; Yurasov, D. V.; Zhukov, A. E.

doi:10.1364/oe.25.016754

Cited by 16 publications

(12 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The threshold power densities were 45 kW/cm 2 [18] and 75 kW/cm 2 [19] for the samples B and A, respectively. The structure C which was grown similarly to the structure B (with the only one difference in the additional doping of the Al 0.3 Ga 0.7 As cladding layers provided in order to create a p-n junction), was used to fabricate the microstrip [20] and microdisk [21] laser diodes. At room temperature, diodes emitted at 0.99 µm (Figure 4) with a threshold current density of 5.5 kA/cm 2 (pulse duration of 1 µs and repetition rate of 400 Hz) for a 2.7 mm long and 20 µm microstrip laser and 28 kA/cm 2 (pulse duration of 0.5 µs and repetition rate of 150 Hz) for the 27 µm diameter microdisk laser.…”

Section: Growth Of the A 3 B 5 Nucleation Layermentioning

confidence: 99%

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

et al. 2018

View full text Add to dashboard Cite

The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation under the electrical pumping. Influence of the Si substrate offcut from the [001] direction, thickness of a Ge buffer and insertion of the AlAs/GaAs superlattice between Ge and GaAs on the structural and optical properties of fabricated samples was studied. The measured threshold current densities at room temperatures were 5.5 kA/cm2 and 20 kA/cm2 for lasers operating at 0.99 μm and 1.11 μm respectively. In order to obtain the stimulated emission at wavelengths longer than 1.1 μm, the InGaAs quantum well laser structures with high In content and GaAsP strain-compensating layers were grown both on Ge/Si and GaAs substrates. Structures grown on GaAs exhibited stimulated emission under optical pumping at the wavelengths of up to 1.24 μm at 300 K while those grown on Ge/Si substrates emitted at shorter wavelengths of up to 1.1 μm and only at 77 K. The main reasons for such performance worsening and also some approaches to overcome them are discussed. The obtained results have shown that monolithic integration of direct-gap A3B5 compounds on Si using MOCVD technology is rather promising approach for obtaining the Si-compatible on-chip effective light source.

show abstract

Section: Growth Of the A 3 B 5 Nucleation Layermentioning

confidence: 99%

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

et al. 2018

View full text Add to dashboard Cite

show abstract

“…8 В настоящее время для реализации " оптоэлектроники на крем-нии" [1] наметился прогресс в создании гибридных лазерных струк-тур на точно ориентированных подложках Si(001). Так, были про-демонстрированы лазеры диапазона 1−1.1 µm на основе гетеро-структур GaAs/AlGaAs с квантовыми ямами (КЯ) InGaAs [2][3][4][5]. В то же время гибридные гетеролазеры A 3 B 5 для оптических межсоединений в кремниевой микроэлектронике должны излучать в области прозрачности объемного Si (λ > 1.2 µm).…”

Section: поступило в редакцию 7 марта 2018 гunclassified

Стимулированное излучение на длине волны 1.3 mum в метаморфной структуре InGaAs/InGaAsP с квантовыми ямами, выращенной на подложке Ge/Si (001)

Алёшкин¹,

Байдусь²,

Vikhrova³

et al. 2018

Письма В Журнал Технической Физики

View full text Add to dashboard Cite

show abstract

“…Технология наращивания полупроводниковых слоев А III В V на подложках Si через переходный слой Ge, формируемый разными методами [6][7][8][9], включая метод " горячей проволоки" [10,11], считается уже отработанной [8,12]. Химическое осаждение из горячей проволоки имеет ряд преимуществ среди аналогов: отсутствие дорогостоящего оборудования, создающего и поддерживающего высокий вакуум, низкая температура роста, ∼ 350 • С, высокая скорость роста при сохранении качества слоя Ge, ∼ 2 ¦ /с [13], пассивация атомарным водородом поверхности, на которой происходит осаждение радикалов GeH n , участвующих в эпитаксиальном росте Ge на Si [14].…”

Section: Introductionunclassified

Наращивание слоя Ge на структуру Si/SiO-=SUB=-2-=/SUB=-/Si (100) методом "горячей проволоки"

Sushkov¹,

Pavlov²,

Денисов³

et al. 2020

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Ge/Si buffer layers grown at different temperatures on Si/SiO2/Si (100) substrates have been fabricated and studied. The Si buffer was grown via molecular beam epitaxy. The Ge layer was produced in a single stage via hot wire chemical vapor deposition process. Structural properties were investigated by high-resolution transmission electron microscopy and reflected high-energy electron diffraction. Such structures can be used in the future as a substrate for growth of high quality light-emitting structures compatible with silicon radiation-resistant integrated circuits. The paper shows the possibility of growth of a single crystal layer of Ge on Si/SiO2/Si (100) through a buffer layer of Si by the hot wire chemical vapor deposition process, and also demonstrates the difficulties that arise in the process of growth of Ge/Si layers on Si/SiO2/Si (100).

show abstract

Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

Cited by 16 publications

References 17 publications

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

Стимулированное излучение на длине волны 1.3 mum в метаморфной структуре InGaAs/InGaAsP с квантовыми ямами, выращенной на подложке Ge/Si (001)

Наращивание слоя Ge на структуру Si/SiO-=SUB=-2-=/SUB=-/Si (100) методом "горячей проволоки"

Contact Info

Product

Resources

About