2015
DOI: 10.1063/1.4930825
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Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser

Abstract: We have demonstrated an electrically injected ultra-low threshold (8.9 nA) room temperature InGaN/GaN based lateral nanowire laser. The nanowires are triangular in shape and survived naturally after etching using boiling phosphoric acid. A polymethyl methacrylate (PMMA) and air dielectric distributed mirror provide an optical feedback, which together with one-dimensional density of states cause ultra-low threshold lasing. Finite difference eigen-mode (FDE) simulation shows that triangular nanowire cavity suppo… Show more

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Cited by 11 publications
(12 citation statements)
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References 15 publications
(28 reference statements)
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“…Light-emitting diodes (LEDs) with InGaN/GaN as the active layer has been the subject of immense studies for various applications. Nanowire based LEDs are among the primary choices for various advantages including better light extraction efficiency due to larger surface to volume ratio, additional confinement supporting stronger electron–hole wave function overlap, and strain relaxation resulting in reduced quantum confined Stark effect. Nanowires may have higher photon reabsorption reducing extraction efficiency; however, the deficiency can be overcome at higher excitation power and carrier injection . Moreover, these structures are relatively free from defects, which further improves the performance of these devices. Lateral nanowires and nanowalls, in particular, belong to an important class due to the ease of fabrication and a precise process control of their positions and dimensions. Furthermore, nanowalls, in general, are very interesting as a host device to observe various quantum mechanical phenomena at room temperature. …”
mentioning
confidence: 99%
See 1 more Smart Citation
“…Light-emitting diodes (LEDs) with InGaN/GaN as the active layer has been the subject of immense studies for various applications. Nanowire based LEDs are among the primary choices for various advantages including better light extraction efficiency due to larger surface to volume ratio, additional confinement supporting stronger electron–hole wave function overlap, and strain relaxation resulting in reduced quantum confined Stark effect. Nanowires may have higher photon reabsorption reducing extraction efficiency; however, the deficiency can be overcome at higher excitation power and carrier injection . Moreover, these structures are relatively free from defects, which further improves the performance of these devices. Lateral nanowires and nanowalls, in particular, belong to an important class due to the ease of fabrication and a precise process control of their positions and dimensions. Furthermore, nanowalls, in general, are very interesting as a host device to observe various quantum mechanical phenomena at room temperature. …”
mentioning
confidence: 99%
“…Quasi-equilibrium and nonequilibrium ultrafast transient spectroscopy of carriers and photons have been proved to be essential for the same. Several studies have been performed for the quasi-equilibrium case using temperature dependent photoluminescence measurements. ,,,,,, The degree of carrier and optical confinement, temperature-dependent radiative and nonradiative processes, and exciton transitions have been explored through experiments under quasi-equilibrium condition. Reports on the ultrafast spectroscopy under nonequilibrium condition for the InGaN/GaN nanowalls are limited and the understanding is at the nascent stage. , The fundamental mechanism of carrier capture into the bound states followed by the decay through various mechanisms is at the heart of this study.…”
mentioning
confidence: 99%
“…GaN based nanostructures are being heavily explored for light emitting sources where quantum confinement and larger surface to volume ratio provide many advantages 1 7 . Various InGaN/GaN and AlGaN/GaN based quantum-wells, walls, wires and dots are used as efficient light sources for infrared to ultra-violet emission demonstrating higher quantum efficiency, photo- and electro-luminescence, large exciton binding energy, lower threshold current for lasers, and lower efficiency droop 8 16 . The emission wavelength is among the most important parameters which characterizes these sources.…”
Section: Introductionmentioning
confidence: 99%
“…III‐Nitride materials and devices have attracted a lot of interest due to their immense potential in electronic and optoelectronic applications. (In,Al)GaN based heterostructures have been found suitable for high power, high frequency and optoelectronic device applications . With a lot of advancements made in the growth technology over several years, it is possible to grow good quality heterostructures suitable for device applications .…”
Section: Introductionmentioning
confidence: 99%