Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Sankaranarayanan, Sandeep; Chouksey, Shonal; Saha, D.; Pendem, Vikas; Udai, Ankit; Aggarwal, Tarni; Ganguly, Swaroop

doi:10.1038/s41598-018-26725-6

Cited by 12 publications

(6 citation statements)

References 34 publications

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“…Nevertheless, for e.g. [11,23] show that the polarization charge varies along the length of the nanowire. Therefore, the average polarization can be controlled by altering the nanowire length.…”

Section: T Bmentioning

confidence: 99%

Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core–shell nanostructures

et al. 2019

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Here, we present an efficient 1D model to describe carrier confinement in GaN/InGaN/GaN and AlGaN/GaN/AlGaN core–shell nanostructures (CSNs) within the effective mass framework. A self-consistent procedure combined with hydrogenic model is implemented to estimate exciton binding energy in these CSNs, as a function of CSN dimensions, polarization charge and alloy composition. A 3-fold higher exciton binding energy in these CSNs than that in planar counterparts is attributed to an increased electron–hole overlap. The trend exhibited by the exciton binding energy with polarization charge and alloy composition in the two types of CSNs is significantly different, owing to a drastic difference in the piezoelectric polarizations. A detailed investigation of the steady-state and transient optical response from these CSNs suggests that GaN/InGaN/GaN CSNs emit a wide spectrum. However, that is not the case with AlGaN/GaN/AlGaN CSNs owing to a relatively weaker quantum confined Stark effect. This study is aimed at providing accurate design strategies for UV-blue III-N CSN light-emitting diodes.

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Section: T Bmentioning

confidence: 99%

Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core–shell nanostructures

et al. 2019

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“…The equilibrium energy band-diagrams of the nanowire along the growth (z-axis) and lateral (y-axis) confinement directions are shown in figures 1(b) and (c), respectively. The nanowires will be partially strain relaxed, which leads to a smaller polarization effect at the InGaN/GaN interface [28].…”

Section: Device Fabricationmentioning

confidence: 99%

Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron–electron scattering and diffusion

Chouksey¹,

Sreenadh²,

Ganguly³

et al. 2019

Nanotechnology

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Understanding the ultrafast processes corresponding to carrier capture, thermalization and relaxation is essential to design high speed optoelectronic devices. Here, we have investigated a size dependent carrier capture process in InGaN/GaN 20, 50 nm nanowires and quantum well systems. Femto-second transient absorption spectroscopy reveals that the carrier capture is a two-step process. The carriers are captured in the barrier by polar optical phonon (POP) scattering. They further scatter into the active region by electron–electron and POP scatterings. The capture is found to slow down for quantum confined structures. A significant number of carriers are found to disappear from the barrier during the diffusion process. All the experimental observations are explained in a simulation framework depicting various scattering mechanisms.

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“…These structures exhibit asymmetry stemming from polarizations, inducing the quantum confined Stark effect. 25 Consequently, they offer a platform for finely tuning surface potential, 26 which holds promise for facilitating self-driven bidirectional photodetection. Further, bidirectional I ph optoelectronic devices are emerging for neuromorphic computing and optically controlled logic gates.…”

Section: Introductionmentioning

confidence: 99%

A Self-Driven Bidirectional Photocurrent Photodetector for Optically Controlled Logic Gates Utilizes a GaN-Nanowall Network

Vashishtha,

Jain,

Prajapat

et al. 2024

ACS Appl. Opt. Mater.

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This Communication has reported a GaN-nanowall-network-based bidirectional photocurrent self-driven photodetector. The device leverages the unique properties of gallium nitride nanowall networks to modulate surface potentials, enabling bidirectional photocurrent generation and a self-driven nature. The detector enables a negative photocurrent under 266 nm illumination, while a positive photocurrent is obtained with a 355 nm source at 0 V applied bias. Peak responsivities of −2.5 and 1.7 A W −1 have been attained for the illumination wavelengths of 266 and 355 nm, respectively, under self-driven mode. Distinct logic states were realized by selectively illuminating the device with different wavelengths. The device operates as self-driven logic gates with output states defined relative to a fiducial zero point. The photocurrent direction and magnitude are also adjustable by varying the optical power intensity. Our findings demonstrate the potential of GaN-nanowall networks for realizing versatile, futuristic multifunction ultraviolet self-driven photonic devices.

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Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Cited by 12 publications

References 34 publications

Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core–shell nanostructures

Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core–shell nanostructures

Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron–electron scattering and diffusion

A Self-Driven Bidirectional Photocurrent Photodetector for Optically Controlled Logic Gates Utilizes a GaN-Nanowall Network

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