2018
DOI: 10.1038/s41598-018-26725-6
|View full text |Cite
|
Sign up to set email alerts
|

Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Abstract: GaN based nanostructures are being increasingly used to improve the performance of various devices including light emitting diodes and lasers. It is important to determine the strain relaxation in these structures for device design and better prediction of device characteristics and performance. We have determined the strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak. We have further determined the strain relaxation as a function of na… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 13 publications
(6 citation statements)
references
References 34 publications
0
4
0
Order By: Relevance
“…Nevertheless, for e.g. [11,23] show that the polarization charge varies along the length of the nanowire. Therefore, the average polarization can be controlled by altering the nanowire length.…”
Section: T Bmentioning
confidence: 99%
“…Nevertheless, for e.g. [11,23] show that the polarization charge varies along the length of the nanowire. Therefore, the average polarization can be controlled by altering the nanowire length.…”
Section: T Bmentioning
confidence: 99%
“…The equilibrium energy band-diagrams of the nanowire along the growth (z-axis) and lateral (y-axis) confinement directions are shown in figures 1(b) and (c), respectively. The nanowires will be partially strain relaxed, which leads to a smaller polarization effect at the InGaN/GaN interface [28].…”
Section: Device Fabricationmentioning
confidence: 99%
“…These structures exhibit asymmetry stemming from polarizations, inducing the quantum confined Stark effect. 25 Consequently, they offer a platform for finely tuning surface potential, 26 which holds promise for facilitating self-driven bidirectional photodetection. Further, bidirectional I ph optoelectronic devices are emerging for neuromorphic computing and optically controlled logic gates.…”
Section: Introductionmentioning
confidence: 99%