Electrically driven single quantum dot polarised single photon emitter

Lochmann, A.; Stock, E.; Schulz, O.; Hopfer, F.; Bimberg, D.; Haisler, V. A.; Toropov, A. I.; Bakarov, A. K.; Kalagin, A. K.

doi:10.1049/el:20061076

Cited by 60 publications

(41 citation statements)

References 8 publications

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“…Summary of the devices reviewed in this paper ( T O = operation temperature, LT = low temperature, HT = high temperature, RT = room temperature, X = Exciton, XX = biexciton, PE = Purcell enhancement, RR = repetition rate). SPS GaAs p-i-n InAs QDs [10] X 892 1.02 80 5 XX 889 0.47 SPS electrically contacted gold nanocluster arrays [54] 680-730 0.4 220 RT SPS GaAs p-i-n InAs QDs Al 0.98 Ga 0.02 As planar microcavity [56] X 909.3 1.4 1000 5 XX 908.1 0.5 SPS GaAs p-i-n InAs QDs AlOx aperture [70] X 896.0 0.45 80 5 XX 898.1 SPS GaAs p-i-n InAs QDs AlGaO aperture and cavity [71][72][73] X 950. SPS GaAs p-i-n InAs QDs planar cavity with oxide confi nement [58] ≈935 0.7 (PE 2.5) 500 20…”

Section: Discussionmentioning

confidence: 99%

“…To this end, individual QDs have been isolated in a diode. [ 71,72 ] MBE was used to grow a diode on semi-insulating (100) GaAs. The LED consisted of an undoped GaAs layer with InAs QDs of low density inserted, a 60 nm thick aperture layer of high aluminium content AlGaAs, and p-and n-type GaAs electrical contact layers.…”

Section: Oxide Aperture Device Designmentioning

confidence: 99%

“…[ 70 ] Copyright 2006, AIP Publishing LLC. b) InAs QDs in GaAs using an AlGaAs oxide aperture; [ 71 ] c) a 12-period Bragg refl ector (DBR) and a 3λ cavity, reproduced with permission. [ 56 ] Copyright 2005, AIP Publishing LLC.…”

Section: Advanced Photonics To Enhance Quantum Light Diodes: High Quamentioning

confidence: 99%

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Electrically Driven Quantum Light Sources

Boretti

Rosa

Mackie

et al. 2015

Advanced Optical Materials

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Typical applications of quantum light require optical sources which generate either individual photons or entangled (correlated) photons. For the sake of practicality and scalability, these quantum sources should be easily produced, operate at room temperature, and be electrically excited and controlled. Here, recent research on quantum sources obtained from electrically driven (ED) devices constructed from p-n junctions integrated in planar optical cavities, micropillars, nanowires, photonic crystals, and active plasmonic elements is reviewed. Single-photon and entangled-photon sources are distinguished by their different roles in the development of either quantum cryptography or quantum computing protocols, and the different types of devices used to produce them are highlighted, with a focus on their spectral emission, brightness, and conditions of operation. Achievements to date are summarized and compared with prerequisites for the practical use of these sources. Important recent results that could provide future novel quantum sources are also in focus, where more practical requirements could be addressed by the judicious engineering of materials and careful device design

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Section: Discussionmentioning

confidence: 99%

Section: Oxide Aperture Device Designmentioning

confidence: 99%

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Electrically Driven Quantum Light Sources

Boretti

Rosa

Mackie

et al. 2015

Advanced Optical Materials

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“…single photon emitter [1,2], has also increased the need for a better understanding of the growth and modification of quantum dots (QDs). Especially for metal-organic vapor phase epitaxy (MOVPE)-the most important growth method for mass fabrication of III-V semiconductor devices-improving the QD device performance has mostly been limited to empirical trial and error processes.…”

Section: Introductionmentioning

confidence: 99%

Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

Kremzow¹,

Pristovsek²,

Kneissl³

2008

Journal of Crystal Growth

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“…In this context, a semiconductor quantum dot (QD) is an attractive singlephoton emitter, which has a nearly perfect radiative yield and a stable emission (no blinking or bleaching). Moreover, it benefits from the maturity of semiconductor technology and can be incorporated into the intrinsic region of a p-i-n structure, to realize a single-photon LED [2][3][4][5][6][7]. For all potential applications, the efficiency ε of the source, defined here as the probability to collect a photon into the first lens of the optical setup, is a key figure of merit.…”

Section: Introductionmentioning

confidence: 99%

Designs for high-efficiency electrically pumped photonic nanowire single-photon sources

Gregersen¹,

Nielsen²,

Mørk³

et al. 2010

Opt. Express

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Abstract:We propose and analyze three electrically-pumped nanowire single-photon source structures, which achieve output efficiencies of more than 80%. These structures are based on a quantum dot embedded in a photonic nanowire with carefully tailored ends and optimized contact electrodes. Contrary to conventional cavity-based sources, this non-resonant approach provides broadband spontaneous emission control and features an improved fabrication tolerance towards surface roughness and imperfections. Using an element-splitting approach, we analyze the various building blocks of the designs with respect to realistic variations of the experimental fabrication parameters. Savona, and A. Imamoğlu, "Explanation of photon correlations in the far-off-resonance optical emission from a quantum-dot-cavity system," Phys. ©2010 Optical Society of America

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Electrically driven single quantum dot polarised single photon emitter

Cited by 60 publications

References 8 publications

Electrically Driven Quantum Light Sources

Electrically Driven Quantum Light Sources

Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

Designs for high-efficiency electrically pumped photonic nanowire single-photon sources

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