Electrically driven single microwire-based single-mode microlaser

Abstract

Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.

Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction

“…The resulting PL suggests that the CVD-produced ZnO:Ga wires possess excellently good crystalline quality. 34,35 Second, the PL properties of the InGaN layer were further measured. The normalized PL spectrum of p-InGaN and the EL spectrum derived from the as-fabricated n-ZnO:Ga MW/p-InGaN heterojunction LED are given in Fig.…”

“…To improve the LED characteristics of the as-constructed n-ZnO:Ga MW/MgO/p-InGaN heterojunction device, the strategy is to cap nanostructured metals with desired plasmons on the ZnO:Ga MW. 35,51,61 Plasmonic Au nanostructures have attracted ever-increasing attention because of their tunable light harnessing capabilities varying from visible to infrared wavelengths since these are chemically and mechanically stable. In the present research, Au nanoparticles were synthesized chemically using a facile seed-mediated method.…”

“…Thus, ZnO is most likely the critical compound for creating droop-free light-emission devices. [34][35][36] Particularly, various kinds of ZnO micro/nanostructures having controlled sizes and different morphologies have been successfully prepared, such as zerodimensional quantum dots and nanocrystals, [37][38][39][40] onedimensional wire-type structures (including nanowires, nanorods, nanoribbons and so on), [41][42][43] two-dimensional structures (such as nanoplates, nanosheets and nanodisks), [44][45][46] and three-dimensional flower-like and urchin-like hierarchical structures. 47,48 Through the appropriately designed n-ZnO/p-InGaN heterointerface, the combination of the merits of both the mature p-InGaN material and ZnO nano-/microstructures would make the as-designed low-dimensional visible light source technically and practically competitive.…”

Performance enhancement of a self-biased n-ZnO microwire/p-GaN heterojunction ultraviolet photodetector incorporating Ag nanowires

“…11,12 Therefore, serving as promising candidates, ZnO nano-and microstructures can be widely used to construct low-dimensional self-driving photodetection devices. [13][14][15][16] Due to the intrinsic nature of the n-type polarity of ZnO and the difficulties of p-type ZnO doping, it is still a serious issue to construct reproducible, stable, and highly efficient p-n homojunction optoelectronic devices. Alternatively, selfpowered PDs based on ZnO micro/nanostructures are designed with a Schottky junction or a p-n heterojunction by combining with other p-type materials.…”

“…11,12 Therefore, serving as promising candidates, ZnO nano- and microstructures can be widely used to construct low-dimensional self-driving photodetection devices. 13–16…”