Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction

Abstract

Heterostructure manufacturing has been extensively studied as indispensable footstones in the progressive semiconductor optoelectronic devices due to their constituent materials, interfacial states and electronic transport capabilities, thus enabling competitive candidates...

Plasmon–Microcavity Coupling and Fabry–Pèrot Lasing in a ZnO:Ga Microwire/p-Type Gallium Nitride Heterojunction

“…With high luminous efficiency and an adjustable wavelength, the structure of light-emitting diodes can be comparable to that of traditional semiconductor devices in the field of display and lighting . Like most p–n junction LEDs, n-type ZnO can form a p–n junction with p-type doped semiconductors such as p-GaN, p-GaAs, and p-InGaN to emit light . GaN is also a third-generation semiconductor material with a band gap similar to that of ZnO, and the lattice mismatch between p-type doped GaN and n-type ZnO is very low at 1.8%, which is essential for the preparation of high-performance heterojunction light-emitting devices.…”

“…3 Like most p−n junction LEDs, n-type ZnO can form a p−n junction with p-type doped semiconductors such as p-GaN, p-GaAs, and p-InGaN to emit light. 4 GaN is also a thirdgeneration semiconductor material with a band gap similar to that of ZnO, and the lattice mismatch between p-type doped GaN and n-type ZnO is very low at 1.8%, which is essential for the preparation of high-performance heterojunction lightemitting devices. ZnO nanowires grown on p-GaN substrates can be made into high-brightness blue and purple LEDs.…”