Electrically Configurable Graphene Field-Effect Transistors with a Graded-Potential Gate

Abstract

A device architecture for electrically configurable graphene field-effect transistor (GFET) using a graded-potential gate is present. The gating scheme enables a linearly varying electric field that modulates the electronic structure of graphene and causes a continuous shift of the Dirac points along the channel of GFET. This spatially varying electrostatic modulation produces a pseudobandgap observed as a suppressed conductance of graphene within a controllable energy range. By tuning the electrical gradient of the gate, a GFET device is reversibly transformed between ambipolar and n- and p-type unipolar characteristics. We further demonstrate an electrically programmable complementary inverter, showing the extensibility of the proposed architecture in constructing logic devices based on graphene and other Dirac materials. The electrical configurable GFET might be explored for novel functionalities in smart electronics.

Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection

“…[2][3][4][5] Recently, the rising stars of 2D materials have presented excellent electronic and optoelectronic properties [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] including ultrafast carrier dynamics, layer-dependent energy bandgap, tunable optical properties, low power dissipation, high mobility, transparency, etc. [2][3][4][5] Recently, the rising stars of 2D materials have presented excellent electronic and optoelectronic properties [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] including ultrafast carrier dynamics, layer-dependent energy bandgap, tunable optical properties, low power dissipation, high mobility, transparency, etc.…”

Twist-controlled resonant tunnelling between monolayer and bilayer graphene

“…[8][9][10][11][12][13] Most notably, the highest quality graphene-hBN vdW structures, with ballistic electron propagation at the micron length-scale, enable one to exploit the unique crystalline structure and conductive properties of graphene [14][15][16] in order to construct transistors featuring highly controllable I-V characteristics. 12,17,18 In particular, the work of Mishchenko et al 12 demonstrated the possibility of producing vertical-tunnelling fieldeffect transistors featuring a pair of graphene electrodes with well aligned crystallographic axes (misaligned by h % 1 ). Such devices exhibit strong resonant peaks in their current characteristics, which precipitate the onset of negative differential conductance (NDC) which has been used to generate radio frequency oscillations when connected to an LC circuit.…”

Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance

“…Another interesting observation is that changing the S/D doping concentration modulates minimum conduction point known as the Dirac point; the point at which I ds is minimum. Earlier studies show that the Dirac point can be changed by varying the drain to source voltage [27] or by some other variations in the GNRFET [16, 27–30]. Fig.…”

“…Much research has been done on GNRFET with respect to channel doping [15, 16], gate oxide [17], gate material [18], dimensional scaling [19] and defects [20]. However, there is much more scope of research with respect to S/D doping concentration.…”