Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection

Wang, Peng; Liu, Shanshan; Luo, Wenjin; Fang, Hehai; Gong, Fan; Guo, Nan; Chen, Zhigang; Zou, Jin; Huang, Yan; Zhou, Xueqing; Wang, Jianlu; Chen, Xiaoshuang; Lü, Wei; Xiu, Faxian; Hu, Weida

doi:10.1002/adma.201604439

Cited by 228 publications

(167 citation statements)

References 44 publications

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“…(iii) The strong built‐in electric field at the interface of heterostructure can effectively separate photogenerated carriers and shorten their transport time in channels . In addition, an arrays detector composed of wafer‐scale multilayer p‐type GaSe and n‐type GaSb semiconductor heterostructures aggregates realizes high‐resolution dual‐color imaging for the radiating target, which demonstrates the feasibility and practicability of practical application in infrared imaging systems. Meanwhile, these heterostructures reveal a broadband detectivity ranging from 400 to 1800 nm and superior response of 20/30 µs .…”

Section: Hybrid Heterostructures Based On 2d Metal Chalcogenides For mentioning

confidence: 96%

2D Metal Chalcogenides for IR Photodetection

Wang

Zhang

Gao

et al. 2019

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130

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Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next‐generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs‐based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.

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Section: Hybrid Heterostructures Based On 2d Metal Chalcogenides For mentioning

confidence: 96%

2D Metal Chalcogenides for IR Photodetection

Wang

Zhang

Gao

et al. 2019

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130

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“…During the past years, broadband imaging technology has attracted enormous attention due to the wide applications in plenty of fields, including biological medicine, mineral exploration, optical communication, and day and night monitoring . For a complex environment, this technology will have a huge advantage compared to single‐band imaging technology in target discrimination and identification by providing broadband information .…”

Section: Introductionmentioning

confidence: 99%

“…For a complex environment, this technology will have a huge advantage compared to single‐band imaging technology in target discrimination and identification by providing broadband information . To promote the development of broadband imaging technology, photodetectors with a broad spectral response have been studied widely . For example, Hu and co‐workers reported a vertical heterostructure of broadband photodetector array based on 2D GaSe/GaSb for visible (vis) and near infrared (NIR) imaging .…”

Section: Introductionmentioning

confidence: 99%

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures

Lou

Shen

2017

Adv Funct Materials

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Broadband image sensors are widely studied and applied in many fields. However, developing high-performance flexible broadband imaging is still a great challenge that needs to be overcome. This study demonstrates a flexible broadband image sensor with SnS quantum dots (QDs)/Zn 2 SnO 4 (ZTO) nanowires (NWs) hybrid nanostructures as the sensing elements, which is prepared by decorating ZTO NWs with SnS QDs via a two-step vapor deposition method. Compared with pristine ZTO NWs, the hybrid QDs/NWs exhibit much higher photoconductive gain and specific detectivity in UV region and extended photoresponse ranging from UV to NIR region. In addition, individual hybrid QDs/NW photodetector built on polyethylene terephthalate substrate shows an excellent flexibility, mechanical stability, folding endurance, and long-term stability. Integrated into a 10 × 10 array, a flexible broadband image sensor is fabricated. Under bending states, the flexible image sensor can still identify clearly the target images composed of white light and red light, revealing the outstanding target identification ability. The superior performance of the devices indicates that the QDs/NWs hybrid nanostructures have a tremendous application potential in future flexible broadband imaging technology.

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“…Our In recent years, 2D materials have aroused great interest as potential building blocks for a variety of fundamental optoelectronic components. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] To date, various 2D materials have been synthesized, including well-known graphene, 15 transition metal dichalcogenides, 16 antimonene, 17 black phosphorus, 18 Mo 2 C, 19 BN, 20 and so on, but some of which face very challenging in various optical and electronic applications due to zero-bandgap, low conductivity, or severe instability in air. In order to address this problem, it is urgent to develop a new material with a good stability and high conductivity.…”

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confidence: 99%

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Liu

Ren

et al. 2017

AIP Advances

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Exploration and development of new two-dimensional (2D) materials with good stability and remarkable physical properties have become the research hotspots. We report for the first time the monodispersity of ultrathin MoO2 nanosheets have been synthesized through an improved chemical vapor deposition (CVD) method using only molybdenum trioxide as precursor. The grown MoO2 nanosheets have an average thickness of ∼ 5 to 10 nm and exhibit good crystal-quality. Temperature-dependent Raman spectra show that the ultrathin MoO2 nanosheets have high thermal stability up to 503 K. In addition, the first order temperature coefficients of the MoO2 characteristic Raman modes O1–Mo and O2–Mo were firstly found to be -1.91×10-2 and -3.94×10-2 cm−1/K, respectively. Two-probe electrical measurements show that the as-fabricated ultrathin MoO2 nanosheets devices preserve a high electrical conductivity in ambient conditions, reaching up to 200 - 475 S/cm. The exceptionally high conductivity of individual MoO2 nanosheet is ascribed to the unique crystal structure. Our results demonstrate that the ultrathin MoO2 nanosheets show great potential applications in constructing new integrated electronic devices and systems.

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Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection

Cited by 228 publications

References 44 publications

2D Metal Chalcogenides for IR Photodetection

2D Metal Chalcogenides for IR Photodetection

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

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Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection

Cited by 228 publications

References 44 publications

2D Metal Chalcogenides for IR Photodetection

2D Metal Chalcogenides for IR Photodetection

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn2SnO4 Nanowires Hybrid Nanostructures

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Contact Info

Product

Resources

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Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures