Electrically conductive nanostructured silver doped zinc oxide (Ag:ZnO) prepared by solution-immersion technique

Afaah, A.N.; Asib, N. A. M.; Aadila, A.; Mohamed, Rahmah; Rusop, M.; Khusaimi, Z.

doi:10.1063/1.4948873

Cited by 6 publications

(2 citation statements)

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“…The lowest resistivity of 1.810 -3 Ω.cm is achieved for sample doped with 2% of Ag. The low resistivity of Ag doped ZnO thin films in this research is very promising when compared with other reports [9][10][11][12][13][14] an open the possibility for using as transparent electrode in optoelectronic field.…”

Section: Methodsmentioning

confidence: 60%

Characteristics of Ag Doped ZnO Thin Films Prepared by Sputtering Method

Ánh¹,

Ha²,

Tuyên³

et al. 2019

MaP

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This paper presents results of preparation of Ag doped ZnO bulk sample by solid state reaction and Ag doped ZnO thin films by sputtering method. Effect of doping concentration (1, 2 and 4%) on the properties of the thin films was investigated. Various methods were utilized to investigate characteristics of the samples: X-ray diffraction, Raman scattering spectroscopy, photoluminescence, energy dispersive X-Ray spectroscopy, scanning electron microscopy, atomic force microscope, absorption spectroscopy and Hall measurement. The results show that Ag diffused into ZnO crystal lattice after heat treatment at 1200oC. As-prepared thin film samples exhibit low resistivity in the order of 10-3Ω.cm. The film doped with 2% Ag shows the lowest resistivity of 1.8´10-3Ω.cm which is potential for making transparent electrodes in optoelectronics.

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Section: Methodsmentioning

confidence: 60%

Characteristics of Ag Doped ZnO Thin Films Prepared by Sputtering Method

Ánh¹,

Ha²,

Tuyên³

et al. 2019

MaP

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“…It is worthwhile noting that the average size is much smaller than for ZnO films prepared by PLD grown on various substrates, such as 40-80 nm for AZO films grown on LaAlO 3 substrate [9] and smaller than the roughness (3-8 nm) of AZO film prepared by direct-current reactive magnetron sputtering. Previous studies suggest that highly oriented growth and good morphology, including homogeneous size distribution, regularly shaped particles and good smoothness, indicate good conductivity of ZnO films [18].…”

Section: Deposition Of Zno Thin Film and Ag Nanoparticlesmentioning

confidence: 95%

Enhancing the thermoelectric performance of ZnO film by sputter-deposition of Ag nanoparticles

Sun

Wang

Sun

et al. 2020

Mater. Res. Express

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Owing to the surface plasmon resonance (SPR), noble metal nanoparticles (NPs) have been intensively employed to improve the optical properties of semiconductors. In this work, Ag NPs are deposited on fully c-axis oriented ZnO film with high-crystallinity prepared by radiofrequency magnetron sputtering on glass substrates. After Ag sputtering of 15 s, the ultraviolet light emission intensity of ZnO film significantly is increased by 50% due to the SPR of Ag NPs. Moreover, the conductive behavior changes from n-type semiconductor to metal-like with room-temperature conductivity sharply increasing by nearly three orders of magnitude from 4.8 for pure ZnO film to 3400 S cm −1 for Ag-deposited ZnO film. The change of conductive behavior and the remarkable increase of the conductivity can be ascribed to isolated Ag NPs with high-density electrons which are distributed on the ZnO film, leading to an increase of carrier concentration that exceeds Mott's critical density (>10 19 cm −3 ). Hall measurements show that after Ag sputtering of 15 s, the mobility increases from about 8 to 40 cm 2 V −1 s −1 and that the carrier concentration increases from 4×10 18 to 5×10 20 cm −3 . Owing to the remarkable improvement of the conductivity, the power-factor value at room temperature is enhanced from 11.5 to 49.2 μWm −1 K −2 .

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