Electrically bistable digital memory behaviors of thin films of polyimides based on conjugated bis(triphenylamine) derivatives

Kim, Kyung‐Tae; Yen, Hung‐Ju; Ko, Yong Gi; Chang, Cha Wen; Kwon, Wonsang; Liou, Guey‐Sheng; Ree, Moonhor

doi:10.1016/j.polymer.2012.07.025

Cited by 37 publications

(12 citation statements)

References 65 publications

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“…89 Al/PI/Al devices containing these PIs initially had high resistances (OFF state). However, under positive and negative voltage sweeps, the PIs manifested volatile or non-volatile digital memory behaviors depending on the substituents on the 2TPA unit.…”

Section: Effects Of the Molecular Design On Volatilitymentioning

confidence: 99%

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Yen

Liou

2015

Polym J

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This review summarizes the most widely used mechanisms in high-performance polymeric resistive memory devices, such as charge transfer, space charge trapping and filament conduction. In addition, recent studies of functional high-performance polymers for memory device applications are reviewed, compared and differentiated based on the mechanisms and structural design methods used. By carefully designing the polymeric structure based on these systematically investigated switching mechanisms, almost all types of current memory characteristics can be reproduced, and these memory properties show extremely high endurance during long-term operation, which makes polyimides very suitable materials for memory applications. INTRODUCTION High-performance polymersToday, life without polymers is unimaginable. Polymers have become the major synthetic materials of the 21st century. High-performance polymers (HPPs) are particularly desirable. The synthesis and development of HPPs over the past 30 years have drawn the attention of many polymer scientists and investigators. These polymers generally possess excellent physical deformation resistance and chemical deterioration resistance at high temperatures over long periods of time. The quest for HPPs began in the late 1950s to meet the demands of the military, aerospace, machine-building and electronics industries, among many other industrial applications.Hill and Walker 1 first noted that the incorporation of aromatic segments into a polymer generally results in a notable increase in its thermal stability. For this reason, much of the research work has been directed toward aromatic compositions. Hence, HPPs usually tend to contain large numbers of aromatic units in their structures. Several of these aromatic HPPs have been used for commercial applications, such as aromatic polyamides, polyimides, polyesters, polysulfones, polytriphenylamine and heterocyclic polymers (Scheme 1). Aromatic polyamides (aramids) and polyimides, such as DuPont's Kevlar fiber and Kapton film, respectively, have been well known for a long time and constantly attract more interest than other HPPs for their useful properties, such as excellent thermal and oxidative stabilities, high mechanical strengths, low flammabilities and good chemical and radiation resistances. [2][3][4][5][6][7][8][9][10][11][12][13] However, the rigidity of the backbone and strong hydrogen bonding of these HPPs result in high melting or glass-transition

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Section: Effects Of the Molecular Design On Volatilitymentioning

confidence: 99%

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Yen

Liou

2015

Polym J

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“…Organic bistable memory devices are highly promising technologies for future ultrahigh density data storages owing to low cost, simple structure, mechanical elasticity and facile processing 6 7 8 . To date, various insulating or semiconducting materials including carbon nano-materials 9 , small molecules 10 11 12 13 , chalcogenides 14 15 , conjugated or non-conjugated polymers 16 17 18 19 20 21 , transition metal oxides 22 23 24 25 , organic composites 26 27 and organic/inorganic hybrid materials 28 29 30 have been adopted for resistive switching memories. In these devices, the data information is stored on the basis of response to high or low conductivity for applied voltages.…”

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confidence: 99%

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends

Zhou

Han

Yan

et al. 2015

Sci Rep

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Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices.

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“…(In the HBPIs, the D moiety can locate at their backbone and terminal structure.) The modification of D moiety includes the introduction of different substituent, the combination of different D moieties as a new one, and isomerization of the chemical structure of D moieties . The memory behaviors of the HBPIs can be tuned from volatile memory (dynamic random‐access memory, DRAM, and static random‐access memory, SRAM) to nonvolatile memory (write once read many times memory, WORM, and flash) by the modification of D moiety .…”

Section: Introductionmentioning

confidence: 99%

Tunable memory performances of the porphyrin terminated hyperbranched polyimides

Tan

Yao

et al. 2018

J. Polym. Sci. Part A: Polym. Chem.

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Herein, a functional hyperbranched polyimide, denoted as ATPP-HBPI, was synthesized by termination of polyamic acid with 5-(4-aminophenyl)-10, 15, 20-triphenylporphyrin (ATPP) and chemical imidization. Subsequently, ATPP-HBPI was coordinated with Zn ion to give Zn-ATPP-HBPI. In the HBPIs, the porphyrin terminals acted as the electron donor (D) and the 6FDA moieties acted as the electron acceptor (A) to promote the electron transition. Both ATPP-HBPI and Zn-ATPP-HBPI exhibited good organo-solubility and high thermal stability. They were used as the electroactive layer to fabricate the memory device with a configuration of indium tin oxide (ITO)/HBPI/Al to evaluate their bistability. The devices exhibited different memory behaviors, WORM for ATPP-HBPI and SRAM for Zn-ATPP-HBPI, respectively. Optical and electrochemical experiments and molecular simulation were carried out to illustrate this phenomenon of performance transformation. The results show that the metallization of terminal of the HBPIs provides a strategy for tailoring the memory characteristics of the devices. V C 2018 Wiley Periodicals, Inc. J. ory characteristics of the devices.

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Electrically bistable digital memory behaviors of thin films of polyimides based on conjugated bis(triphenylamine) derivatives

Cited by 37 publications

References 65 publications

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends

Tunable memory performances of the porphyrin terminated hyperbranched polyimides

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