Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

Uchino, Toshitaka; Shimpo, F.; Kawashima, T.; Ayre, G. N.; Smith, David C.; Groot, C. H. de; Ashburn, P.

doi:10.1063/1.4829155

Cited by 13 publications

(5 citation statements)

References 18 publications

(20 reference statements)

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“…Thus, R s considers the resistance of the LC-CNTs plus the junction resistances. This junction can be modeled as a Schottky barrier [31,53], and the current through the thermionic emission diffusion (TED) theory [54], described by:…”

Section: Electrical Characterization Of the Lc-cnts/si Junctionmentioning

confidence: 99%

Tunable Low Crystallinity Carbon Nanotubes/Silicon Schottky Junction Arrays and Their Potential Application for Gas Sensing

et al. 2021

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Highly ordered nanostructure arrays have attracted wide attention due to their wide range of applicability, particularly in fabricating devices containing scalable and controllable junctions. In this work, highly ordered carbon nanotube (CNT) arrays grown directly on Si substrates were fabricated, and their electronic transport properties as a function of wall thickness were explored. The CNTs were synthesized by chemical vapor deposition inside porous alumina membranes, previously fabricated on n-type Si substrates. The morphology of the CNTs, controlled by the synthesis parameters, was characterized by electron microscopies and Raman spectroscopy, revealing that CNTs exhibit low crystallinity (LC). A study of conductance as a function of temperature indicated that the dominant electric transport mechanism is the 3D variable range hopping. The electrical transport explored by I–V curves was approached by an equivalent circuit based on a Schottky diode and resistances related to the morphology of the nanotubes. These junction arrays can be applied in several fields, particularly in this work we explored their performance in gas sensing mode and found a fast and reliable resistive response at room temperature in devices containing LC-CNTs with wall thickness between 0.4 nm and 1.1 nm.

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Section: Electrical Characterization Of the Lc-cnts/si Junctionmentioning

confidence: 99%

Tunable Low Crystallinity Carbon Nanotubes/Silicon Schottky Junction Arrays and Their Potential Application for Gas Sensing

et al. 2021

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“…Low dimensional materials have attracted attention in recent years because of their excellent electrical properties and might enable innovative architectures in the "More than Moore" and "Beyond-CMOS" domains where add functionalities to nanodevices. [1][2][3] In particular, graphene is one of the most attractive building blocks due to its excellent electronic, optical, mechanical, and chemical properties. Graphene has spurred research into many novel applications including high-frequency devices, biosensors, optical devices.…”

Section: Introductionmentioning

confidence: 99%

Electrical transport properties of gate tunable graphene lateral tunnel diodes

Shiga

Komiyama

Fuse

et al. 2020

Jpn. J. Appl. Phys.

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A detailed study of the electrical transport properties of gate tunable graphene lateral tunnel diodes is presented. The graphene-Al 2 O 3 -graphene lateral tunnel diodes are fabricated on Si/SiO 2 substrates, and the fabricated devices show rectifying characteristics at the low voltage below 1 V. The rectifying behavior can be controlled by applying back gate voltages. As a result, the devices show high asymmetry and strong nonlinearity current-voltage (I-V ) characteristics, which are desirable properties for applications such as optical rectennas and infrared detectors. The electrical transport mechanism of the graphene lateral diodes is analyzed by extracting parameters from the measured I-V characteristics. We find that trap-assisted tunneling from the defect levels in the Al 2 O 3 layer is the most likely mechanism of the forward current of the fabricated graphene lateral diodes.

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“…Among their unique advantages over p-n junction diodes are fast response, low resistance and small transient reverse current during switching [2,3]. CNTs are an excellent candidate nowadays due to several reasons which are near ballistic transport and making them a very low-power alternative [4,5]. One foremost obstacle to the implementation of CNTs in electronic devices is the present of metallic tubes in bulk SWCNTs.…”

Section: Introductionmentioning

confidence: 99%

The Structural Analysis of MWCNTs Modified by DBD Plasma and Electrical Properties on Schottky Diode Application

Sahari¹

2020

IJATCSE

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Metallic nature of multiwalled carbon nanotubes (MWCNTs) were modified using low frequency (50Hz) non-equilibrium plasma, which was generated separately by oxygen and nitrogen dielectric barrier discharge plasma (DBD) at atmospheric pressure. Its potential to behave as semiconducting behavior mainly in diode application was studied. The surface structure and electrical properties changes before and after treatments were analyzed by using X-Ray Photoelectron (XPS), and IV measurement (a two-point probe). The current-voltage (I-V) characteristics shows that Au/MWCNT-N 2 (12kV)/Al shows good rectifying behavior. This showed that, the nitrogen-containing group can modify the metallic nature of MWCNTs to semiconducting behavior. Since the I-V curves for Au/MWCNTs-N 2 (12kV)/Al has rectifying behavior similar to Schottky diode, the electronic parameters such as ideality factor, barrier height and series resistance of the device were extracted by using three methods and give good agreement between them.

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Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

Cited by 13 publications

References 18 publications

Tunable Low Crystallinity Carbon Nanotubes/Silicon Schottky Junction Arrays and Their Potential Application for Gas Sensing

Tunable Low Crystallinity Carbon Nanotubes/Silicon Schottky Junction Arrays and Their Potential Application for Gas Sensing

Electrical transport properties of gate tunable graphene lateral tunnel diodes

The Structural Analysis of MWCNTs Modified by DBD Plasma and Electrical Properties on Schottky Diode Application

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