The Structural Analysis of MWCNTs Modified by DBD Plasma and Electrical Properties on Schottky Diode Application

Abstract

Metallic nature of multiwalled carbon nanotubes (MWCNTs) were modified using low frequency (50Hz) non-equilibrium plasma, which was generated separately by oxygen and nitrogen dielectric barrier discharge plasma (DBD) at atmospheric pressure. Its potential to behave as semiconducting behavior mainly in diode application was studied. The surface structure and electrical properties changes before and after treatments were analyzed by using X-Ray Photoelectron (XPS), and IV measurement (a two-point probe). The current-voltage (I-V) characteristics shows that Au/MWCNT-N 2 (12kV)/Al shows good rectifying behavior. This showed that, the nitrogen-containing group can modify the metallic nature of MWCNTs to semiconducting behavior. Since the I-V curves for Au/MWCNTs-N 2 (12kV)/Al has rectifying behavior similar to Schottky diode, the electronic parameters such as ideality factor, barrier height and series resistance of the device were extracted by using three methods and give good agreement between them.

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

“…The MIS_B exhibit much more realistic to the Schottky diode current-voltage response than MIS_A. Assuming both MIS samples demonstrate the behaviour of MIS Schottky diode, the diode characteristic can be extracted from the thermionic emission model and can be express as an empirical equation (Sahari et al , 2020): …”

“…The n value for MIS_A is too large and far from the ideal diode. The large n value can be caused by defects or imperfect of the thin-film material and interfacial layer (Sahari et al , 2020). While MIS_B demonstrates a lower n value than MIS_A, therefore it shows that the highly c-axis of temperature-assisted AlN thin-film is much better in this comparative study.…”